JPS54155770A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54155770A
JPS54155770A JP6467678A JP6467678A JPS54155770A JP S54155770 A JPS54155770 A JP S54155770A JP 6467678 A JP6467678 A JP 6467678A JP 6467678 A JP6467678 A JP 6467678A JP S54155770 A JPS54155770 A JP S54155770A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
surface
strain
substrate
layer
top
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6467678A
Inventor
Shoji Kobayashi
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve electric characteristics with strain in an element region eliminated, by heat-treating the reverse surface of a semiconductor substrate, with a semiconductor element on its top surface, at a temperature of more than 200°C after mechanically polishing the reverse surface to a fixed thickness.
CONSTITUTION: On semiconductor substrate 1, epitaxial layer is grown, the surface is covered with oxidized film 3, and after base region 4 and emitter region 5 are both provided, metal electrode 6 is fitted. The reverse surface of substrate 1 of the semiconductor device formed in this way is mechanically polished to a thickness suitable for pelletizing, thereby generating strain between substrate 1 and epitaxial layer 2. In other words, plastic strain layer 11 close to polished surface 7, plastic- elastic strain layer 12 from its top closely to the surface of substrate 1, and elastic strain layer 13 from its top to the surface of epitaxial layer 2 are formed respectively. Next, a heat treatment of 400W500°C is done in N2 gas for sixty minutes to remove strain completely except elastic strain layer 12 near polished surface 7. Consequently, the manufacture yield improves.
COPYRIGHT: (C)1979,JPO&Japio
JP6467678A 1978-05-29 1978-05-29 Manufacture of semiconductor device Pending JPS54155770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6467678A JPS54155770A (en) 1978-05-29 1978-05-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6467678A JPS54155770A (en) 1978-05-29 1978-05-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54155770A true true JPS54155770A (en) 1979-12-08

Family

ID=13265003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6467678A Pending JPS54155770A (en) 1978-05-29 1978-05-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54155770A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169319A (en) * 1980-05-30 1981-12-26 Nec Home Electronics Ltd Manufacture of semiconductor device
US5063177A (en) * 1990-10-04 1991-11-05 Comsat Method of packaging microwave semiconductor components and integrated circuits
US6500694B1 (en) 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US7023051B2 (en) 2003-04-29 2006-04-04 Micron Technology, Inc. Localized strained semiconductor on insulator
US7041178B2 (en) 2000-02-16 2006-05-09 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US7045874B2 (en) 2003-05-07 2006-05-16 Micron Technology, Inc. Micromechanical strained semiconductor by wafer bonding
US7084429B2 (en) 2003-04-29 2006-08-01 Micron, Technology, Inc. Strained semiconductor by wafer bonding with misorientation
US7198974B2 (en) * 2003-03-05 2007-04-03 Micron Technology, Inc. Micro-mechanically strained semiconductor film
US8962447B2 (en) 2006-08-03 2015-02-24 Micron Technology, Inc. Bonded strained semiconductor with a desired surface orientation and conductance direction

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169319A (en) * 1980-05-30 1981-12-26 Nec Home Electronics Ltd Manufacture of semiconductor device
US5063177A (en) * 1990-10-04 1991-11-05 Comsat Method of packaging microwave semiconductor components and integrated circuits
US9331149B2 (en) 2000-02-16 2016-05-03 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US9082627B2 (en) 2000-02-16 2015-07-14 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US8053329B2 (en) 2000-02-16 2011-11-08 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US7387944B2 (en) 2000-02-16 2008-06-17 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US7041178B2 (en) 2000-02-16 2006-05-09 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US7335572B2 (en) 2000-02-16 2008-02-26 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US9391143B2 (en) 2000-02-16 2016-07-12 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6627531B2 (en) 2000-03-22 2003-09-30 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6500694B1 (en) 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US7037755B2 (en) 2000-03-22 2006-05-02 Ziptronix, Inc. Three dimensional device integration method and integrated device
US7198974B2 (en) * 2003-03-05 2007-04-03 Micron Technology, Inc. Micro-mechanically strained semiconductor film
US7429763B2 (en) 2003-04-29 2008-09-30 Micron Technology, Inc. Memory with strained semiconductor by wafer bonding with misorientation
US7023051B2 (en) 2003-04-29 2006-04-04 Micron Technology, Inc. Localized strained semiconductor on insulator
US7041575B2 (en) 2003-04-29 2006-05-09 Micron Technology, Inc. Localized strained semiconductor on insulator
US7084429B2 (en) 2003-04-29 2006-08-01 Micron, Technology, Inc. Strained semiconductor by wafer bonding with misorientation
US7045874B2 (en) 2003-05-07 2006-05-16 Micron Technology, Inc. Micromechanical strained semiconductor by wafer bonding
US8962447B2 (en) 2006-08-03 2015-02-24 Micron Technology, Inc. Bonded strained semiconductor with a desired surface orientation and conductance direction

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