JPS54111761A - Electrode construction of semiconductor device - Google Patents

Electrode construction of semiconductor device

Info

Publication number
JPS54111761A
JPS54111761A JP1844178A JP1844178A JPS54111761A JP S54111761 A JPS54111761 A JP S54111761A JP 1844178 A JP1844178 A JP 1844178A JP 1844178 A JP1844178 A JP 1844178A JP S54111761 A JPS54111761 A JP S54111761A
Authority
JP
Japan
Prior art keywords
pad
film
psg
circumference
bump electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1844178A
Other languages
Japanese (ja)
Inventor
Akihiro Tomosawa
Shozo Hosoda
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1844178A priority Critical patent/JPS54111761A/en
Publication of JPS54111761A publication Critical patent/JPS54111761A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02233—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body not in direct contact with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13005—Structure
    • H01L2224/13006—Bump connector larger than the underlying bonding area, e.g. than the under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To increase the reliability of the bump electrode, by providing Al pad limited to the part corresponding to the center of the Au bump electrode.
CONSTITUTION: SiO2 12 and PSG 14 are laminated on the Si substrate 10, and it is covered with PSG 16 by providing Al pad 16. The background film 20 is provided by sequentially evaporating the open hole 18 Av, Cr, Ni-Cr, Pd so that the film 14 is exposed on the circumference of the pad 16 and a part is superimposed on the film 18. Next, when the Au bump electrode 22 is formed, since the film 18 is made thicker than the pad 16, the circumference part 22 is higher than the center part 22 B. With this constitution, even if the PSG beneath the bump circumference is damaged with the bonding pressure, since no Al layer is present to this part, no reaction between Au and Al is caused, avoiding the purple break and open wire.
COPYRIGHT: (C)1979,JPO&Japio
JP1844178A 1978-02-22 1978-02-22 Electrode construction of semiconductor device Pending JPS54111761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1844178A JPS54111761A (en) 1978-02-22 1978-02-22 Electrode construction of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1844178A JPS54111761A (en) 1978-02-22 1978-02-22 Electrode construction of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54111761A true JPS54111761A (en) 1979-09-01

Family

ID=11971717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1844178A Pending JPS54111761A (en) 1978-02-22 1978-02-22 Electrode construction of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54111761A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009124042A (en) * 2007-11-16 2009-06-04 Rohm Co Ltd Semiconductor device
US7728431B2 (en) 2006-06-15 2010-06-01 Sony Corporation Electronic component, semiconductor device employing same, and method for manufacturing electronic component

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7728431B2 (en) 2006-06-15 2010-06-01 Sony Corporation Electronic component, semiconductor device employing same, and method for manufacturing electronic component
JP2009124042A (en) * 2007-11-16 2009-06-04 Rohm Co Ltd Semiconductor device
US9035455B2 (en) 2007-11-16 2015-05-19 Rohm Co., Ltd. Semiconductor device
US9437544B2 (en) 2007-11-16 2016-09-06 Rohm Co., Ltd. Semiconductor device
US9607957B2 (en) 2007-11-16 2017-03-28 Rohm Co., Ltd. Semiconductor device
US9941231B2 (en) 2007-11-16 2018-04-10 Rohm Co., Ltd. Semiconductor device

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