JPS5473561A - Electrode structure of semiconductor device - Google Patents

Electrode structure of semiconductor device

Info

Publication number
JPS5473561A
JPS5473561A JP14001477A JP14001477A JPS5473561A JP S5473561 A JPS5473561 A JP S5473561A JP 14001477 A JP14001477 A JP 14001477A JP 14001477 A JP14001477 A JP 14001477A JP S5473561 A JPS5473561 A JP S5473561A
Authority
JP
Japan
Prior art keywords
film
layer
deposited
psg
bump electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14001477A
Other languages
Japanese (ja)
Inventor
Koji Nose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14001477A priority Critical patent/JPS5473561A/en
Publication of JPS5473561A publication Critical patent/JPS5473561A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Abstract

PURPOSE: To enhance the seating stability of bump electrode, avoiding crack occurrence in PSG passivation film, by constituting so that fragile PSG film may not exist just beneath the bump electrode composing on a semiconductor substrate.
CONSTITUTION: SiO2 film 12a is deposited on Si substrate 10, and a frame-like polycrystalline Si layer 11 having a notch 11a for wiring lead-out is formed around the intended bonding region, and PSG film 12b is deposited on the entire surface, then a base insulation film 12 is constituted with the films 12a and 12b. In the recess part of film 12 due to the presence of frame-like polycrystalline Si layer 11, Al layer 24A is deposited, and Al layer 24B to be connected to the electrode of circuit element is deposited on the outside of the film 12. Then, the entire surface is coated with PSG film 16, and openings 16a and 16b are provided to exposed part of film 12 and layer 24B, in which NiCr/Pd base metal layer 20 extending onto the film 16 is deposited. Again depositing PSG film 18, and opening 18b is provided, and Au bump electrode layer 22 to connect to the layer 20 is fitted.
COPYRIGHT: (C)1979,JPO&Japio
JP14001477A 1977-11-24 1977-11-24 Electrode structure of semiconductor device Pending JPS5473561A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14001477A JPS5473561A (en) 1977-11-24 1977-11-24 Electrode structure of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14001477A JPS5473561A (en) 1977-11-24 1977-11-24 Electrode structure of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5473561A true JPS5473561A (en) 1979-06-12

Family

ID=15258918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14001477A Pending JPS5473561A (en) 1977-11-24 1977-11-24 Electrode structure of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5473561A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116642A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor device
JPS60262446A (en) * 1984-06-08 1985-12-25 Nec Kansai Ltd Semiconductor pellet
US4680610A (en) * 1983-11-30 1987-07-14 Siemens Aktiengesellschaft Semiconductor component comprising bump-like, metallic lead contacts and multilayer wiring

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116642A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor device
US4680610A (en) * 1983-11-30 1987-07-14 Siemens Aktiengesellschaft Semiconductor component comprising bump-like, metallic lead contacts and multilayer wiring
JPS60262446A (en) * 1984-06-08 1985-12-25 Nec Kansai Ltd Semiconductor pellet

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