JPS54111795A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS54111795A JPS54111795A JP1928978A JP1928978A JPS54111795A JP S54111795 A JPS54111795 A JP S54111795A JP 1928978 A JP1928978 A JP 1928978A JP 1928978 A JP1928978 A JP 1928978A JP S54111795 A JPS54111795 A JP S54111795A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- opening
- film
- coated
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To avoid open step, by making excellent the bonding among the wiring layers, through the provision of opening at a given location by coating the insulation film on the first wiring layer formed on the semiconductor substrate, through plating of metal in non-electrolytical way in the opening, and through the coating of the second wiring layer.
CONSTITUTION: The SiO2 film 12 having the opening to make contact with the substrate 11 and the first wiring layer 13 on the Si substrate 11 is coated, and the first Al wiring layer 13 is coated on the entire surface. Next, the SiO2 film 14 with CVD method is covered on it, the opening is formed with selective etching, and the Ni plating layer 16 is formed on the wiring layer 13 exposed with non-electrolytic plating method, implanting the opening and avoiding the step difference with the film 14. The surface of the film 14 and the layer 16 are made on the same plane. After that, the second Al wiring layer 15 is coated on the entire surface. Thus, no step difference is caused between the layers 13 and 15, and the IC having excellent bonding can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1928978A JPS54111795A (en) | 1978-02-21 | 1978-02-21 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1928978A JPS54111795A (en) | 1978-02-21 | 1978-02-21 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54111795A true JPS54111795A (en) | 1979-09-01 |
Family
ID=11995271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1928978A Pending JPS54111795A (en) | 1978-02-21 | 1978-02-21 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54111795A (en) |
-
1978
- 1978-02-21 JP JP1928978A patent/JPS54111795A/en active Pending
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