JPS54111795A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54111795A
JPS54111795A JP1928978A JP1928978A JPS54111795A JP S54111795 A JPS54111795 A JP S54111795A JP 1928978 A JP1928978 A JP 1928978A JP 1928978 A JP1928978 A JP 1928978A JP S54111795 A JPS54111795 A JP S54111795A
Authority
JP
Japan
Prior art keywords
wiring layer
opening
film
coated
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1928978A
Other languages
Japanese (ja)
Inventor
Tsutomu Tashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1928978A priority Critical patent/JPS54111795A/en
Publication of JPS54111795A publication Critical patent/JPS54111795A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To avoid open step, by making excellent the bonding among the wiring layers, through the provision of opening at a given location by coating the insulation film on the first wiring layer formed on the semiconductor substrate, through plating of metal in non-electrolytical way in the opening, and through the coating of the second wiring layer.
CONSTITUTION: The SiO2 film 12 having the opening to make contact with the substrate 11 and the first wiring layer 13 on the Si substrate 11 is coated, and the first Al wiring layer 13 is coated on the entire surface. Next, the SiO2 film 14 with CVD method is covered on it, the opening is formed with selective etching, and the Ni plating layer 16 is formed on the wiring layer 13 exposed with non-electrolytic plating method, implanting the opening and avoiding the step difference with the film 14. The surface of the film 14 and the layer 16 are made on the same plane. After that, the second Al wiring layer 15 is coated on the entire surface. Thus, no step difference is caused between the layers 13 and 15, and the IC having excellent bonding can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP1928978A 1978-02-21 1978-02-21 Manufacture for semiconductor device Pending JPS54111795A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1928978A JPS54111795A (en) 1978-02-21 1978-02-21 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1928978A JPS54111795A (en) 1978-02-21 1978-02-21 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS54111795A true JPS54111795A (en) 1979-09-01

Family

ID=11995271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1928978A Pending JPS54111795A (en) 1978-02-21 1978-02-21 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54111795A (en)

Similar Documents

Publication Publication Date Title
JPS55163860A (en) Manufacture of semiconductor device
JPS5240969A (en) Process for production of semiconductor device
JPS54111795A (en) Manufacture for semiconductor device
JPS5748249A (en) Semiconductor device
JPS57145340A (en) Manufacture of semiconductor device
JPS5460582A (en) Electrode wiring and its forming method in semiconductor device
JPS5555546A (en) Method of wiring semiconductor device
JPS5553441A (en) Semiconductor device
JPS54162458A (en) Manufacture for semiconductor device
JPS5789242A (en) Fabrication of semiconductor device
JPS5732654A (en) Semiconductor integrated circuit device
JPS57167656A (en) Manufacture of semiconductor device
JPS5756948A (en) Manufacture of semiconductor device
JPS559415A (en) Semiconductor manufacturing method
JPS5797643A (en) Manufacture of semiconductor device
JPS5349964A (en) Manufacture of semiconductor device
JPS56165339A (en) Semiconductor device
JPS56162852A (en) Semiconductor device and manufacture thereof
JPS572545A (en) Manufacture of semiconductor device
JPS6473642A (en) Manufacture of semiconductor device
JPS5519880A (en) Manufacturing method of semiconductor device
JPS53148291A (en) Production of semiconductor device
JPS57199238A (en) Manufacture of semiconductor device
KR950006994A (en) Via plug formation method of semiconductor device
JPS56160052A (en) Semiconductor device