JPS57199238A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57199238A
JPS57199238A JP8476081A JP8476081A JPS57199238A JP S57199238 A JPS57199238 A JP S57199238A JP 8476081 A JP8476081 A JP 8476081A JP 8476081 A JP8476081 A JP 8476081A JP S57199238 A JPS57199238 A JP S57199238A
Authority
JP
Japan
Prior art keywords
film
insulation film
wiring layer
metal wiring
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8476081A
Other languages
Japanese (ja)
Inventor
Yoshio Kakei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8476081A priority Critical patent/JPS57199238A/en
Publication of JPS57199238A publication Critical patent/JPS57199238A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To avoid discontinuity by forming a metal wiring layer after a surface of an insulation layer on a semiconductor substrate is made uniform by etching. CONSTITUTION:When a metal wiring layer is formed on a semiconductor substrate 1 in which the first conductive type diffusion regions 5 and 6 are formed and on a surface of which a thick inusltion film 2a and a thin insulation film 2b are formed, a portion of the thick insulation film 2a is removed to the same thickness as the thin insulation film 2b on the regions 5 and 6 by using a photoresist film 7. The metal film is formed on a uniform insulation film 2c by deposition or sputtering and patterned to form an electrode 3. Thus, as the metal wiring layer is formed uniformly, discontiniuty such as breakage at the difference in level is avoided.
JP8476081A 1981-06-02 1981-06-02 Manufacture of semiconductor device Pending JPS57199238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8476081A JPS57199238A (en) 1981-06-02 1981-06-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8476081A JPS57199238A (en) 1981-06-02 1981-06-02 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57199238A true JPS57199238A (en) 1982-12-07

Family

ID=13839634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8476081A Pending JPS57199238A (en) 1981-06-02 1981-06-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57199238A (en)

Similar Documents

Publication Publication Date Title
JPS55163860A (en) Manufacture of semiconductor device
JPS6435421A (en) Thin film transistor array
GB1319682A (en) Thin film metallization process for microcircuits
JPS5595340A (en) Preparation of semiconductor device
JPS57100731A (en) Manufacture of semiconductor device
JPS57199238A (en) Manufacture of semiconductor device
JPS6425433A (en) Manufacture of semiconductor device
JPS57183052A (en) Semiconductor
JPS5331983A (en) Production of semiconductor substrates
JPS5669843A (en) Manufacture of semiconductor device
JPS57145340A (en) Manufacture of semiconductor device
JPS57204146A (en) Manufacture of semiconductor device
JPS6459936A (en) Manufacture of integrated circuit
TW331018B (en) Method of fabricating semiconductor devices
JPS57167659A (en) Manufacture of semiconductor device
JPS6430228A (en) Manufacture of semiconductor device
JPS5635421A (en) Manufacture of minute structure
JPS559415A (en) Semiconductor manufacturing method
JPS57201026A (en) Manufacture of semiconductor device
JPS6484735A (en) Manufacture of semiconductor device
JPS57184232A (en) Manufacture of semiconductor device
JPS56165339A (en) Semiconductor device
JPS57159021A (en) Forming method of pattern
JPS572545A (en) Manufacture of semiconductor device
JPS56130951A (en) Manufacture of semiconductor device