JPS6473642A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6473642A
JPS6473642A JP23012787A JP23012787A JPS6473642A JP S6473642 A JPS6473642 A JP S6473642A JP 23012787 A JP23012787 A JP 23012787A JP 23012787 A JP23012787 A JP 23012787A JP S6473642 A JPS6473642 A JP S6473642A
Authority
JP
Japan
Prior art keywords
wiring layer
deposited
metal wiring
bias
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23012787A
Other languages
Japanese (ja)
Inventor
Takashi Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP23012787A priority Critical patent/JPS6473642A/en
Publication of JPS6473642A publication Critical patent/JPS6473642A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To eliminate troubles, such as displacement of mask alignment, impossibility of mask alignment by depositing a lower metal wiring layer under good condition of step coverage on a semiconductor substrate formed with a contact window, and further depositing an upper metal wiring layer of the same composition as that of the upper layer under the condition of eliminating the surface roughness thereon. CONSTITUTION:An interlayer insulating film 2, such as an SiO2 film is deposited by a CVD method in length of 1.0mum, and a contact window 3 is formed by photolithographic and etching steps on the film 2. Then, a lower metal wiring layer 4 is deposited 0.6mum by a bias sputtering method. Further, an upper metal wiring layer 5 is deposited 0.4mum on the layer 4 by a normal sputtering method without bias. In this case, since the surface of the wiring layer is covered with a layer deposited by the normal sputtering method without bias on the whole surface, its surface roughness can be considerably alleviated.
JP23012787A 1987-09-14 1987-09-14 Manufacture of semiconductor device Pending JPS6473642A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23012787A JPS6473642A (en) 1987-09-14 1987-09-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23012787A JPS6473642A (en) 1987-09-14 1987-09-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6473642A true JPS6473642A (en) 1989-03-17

Family

ID=16902995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23012787A Pending JPS6473642A (en) 1987-09-14 1987-09-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6473642A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102768335A (en) * 2012-06-29 2012-11-07 福州瑞芯微电子有限公司 Circuit and method for monitoring chip internal circuit signal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102768335A (en) * 2012-06-29 2012-11-07 福州瑞芯微电子有限公司 Circuit and method for monitoring chip internal circuit signal

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