JPS54145488A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54145488A
JPS54145488A JP2254979A JP2254979A JPS54145488A JP S54145488 A JPS54145488 A JP S54145488A JP 2254979 A JP2254979 A JP 2254979A JP 2254979 A JP2254979 A JP 2254979A JP S54145488 A JPS54145488 A JP S54145488A
Authority
JP
Japan
Prior art keywords
film
region
layer
polycrystal
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2254979A
Other languages
Japanese (ja)
Other versions
JPS5738028B2 (en
Inventor
Yukio Yasuda
Minoru Yamanaka
Kei Kirita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2254979A priority Critical patent/JPS54145488A/en
Publication of JPS54145488A publication Critical patent/JPS54145488A/en
Publication of JPS5738028B2 publication Critical patent/JPS5738028B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To simplify multi-layer wiring formation with a break of a wire prevented while a hillock phenomenon occurring in an Al film is reduced, by forming a wiring layer, formed on a semiconductor substrate, of the Al film which has a polycrystal Si film as its lower layer.
CONSTITUTION: Onto Si substrate 11 with fixed diffusion region 16 formed, SiO2 film 12 is bonded and at the center part of region 16, hole 16 for exposing region 16 with part of film 12 left is provided. Next, the wiring pattern of the two-layer structure of polycrystal Si film 13 and Al metal film 14 is bonded to the entire surface and part of film 13 is connected to region 16 via hole 16. Then, this double- layer film is patterned by photoetching to make an opening over film 12 left on region 16. As a result, even if electro-migration occurs in Al metal film 14, electric conduction can be maintained by the lower layer, poly-craytal Si film 13, and the mean operation time until a fault is prlonged 15 to 20 times that at the time of the formation of an Al film directly on the insulating film.
COPYRIGHT: (C)1979,JPO&Japio
JP2254979A 1979-03-01 1979-03-01 Semiconductor device Granted JPS54145488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2254979A JPS54145488A (en) 1979-03-01 1979-03-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2254979A JPS54145488A (en) 1979-03-01 1979-03-01 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4468580A Division JPS55146947A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54145488A true JPS54145488A (en) 1979-11-13
JPS5738028B2 JPS5738028B2 (en) 1982-08-13

Family

ID=12085910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2254979A Granted JPS54145488A (en) 1979-03-01 1979-03-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54145488A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678121A (en) * 1979-11-29 1981-06-26 Toshiba Corp Manufacture of semiconductor device
JPS584948A (en) * 1981-06-30 1983-01-12 Fujitsu Ltd Semiconductor device
JPS5966150A (en) * 1982-10-08 1984-04-14 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678121A (en) * 1979-11-29 1981-06-26 Toshiba Corp Manufacture of semiconductor device
JPS584948A (en) * 1981-06-30 1983-01-12 Fujitsu Ltd Semiconductor device
JPS5966150A (en) * 1982-10-08 1984-04-14 Toshiba Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS5738028B2 (en) 1982-08-13

Similar Documents

Publication Publication Date Title
JPS5519857A (en) Semiconductor
EP0177105A3 (en) Method for providing a semiconductor device with planarized contacts
JPS54145488A (en) Semiconductor device
JPS5640260A (en) Manufacture of semiconductor device
JP2808616B2 (en) Method for manufacturing semiconductor device
JPS5518056A (en) Semiconductor device
JPS57145340A (en) Manufacture of semiconductor device
JPS5553441A (en) Semiconductor device
KR980005930A (en) Semiconductor device and manufacturing method
JPS54128296A (en) Wiring structure and its manufacture
JPS54117680A (en) Semiconductor device
JPS559415A (en) Semiconductor manufacturing method
JPS55113344A (en) Electrode wiring and its manufacture
JPS54162458A (en) Manufacture for semiconductor device
JPS5563843A (en) Formation of wiring conductive layer in semiconductor i.c. device
JPS6484722A (en) Manufacture of semiconductor device
JPS5522865A (en) Manufacturing methof of semiconductor device
JPS6425551A (en) Semiconductor device
JPS5473561A (en) Electrode structure of semiconductor device
JPS5461490A (en) Multi-layer wiring forming method in semiconductor device
JPS5482185A (en) Manufacture of semiconductor device
JPS54162459A (en) Manufacture for semiconductor device
JPS5649541A (en) Multilayer wiring structure for integrated circuit
JPS5732654A (en) Semiconductor integrated circuit device
JPH01268150A (en) Semiconductor device