JPS54145488A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54145488A JPS54145488A JP2254979A JP2254979A JPS54145488A JP S54145488 A JPS54145488 A JP S54145488A JP 2254979 A JP2254979 A JP 2254979A JP 2254979 A JP2254979 A JP 2254979A JP S54145488 A JPS54145488 A JP S54145488A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- layer
- polycrystal
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To simplify multi-layer wiring formation with a break of a wire prevented while a hillock phenomenon occurring in an Al film is reduced, by forming a wiring layer, formed on a semiconductor substrate, of the Al film which has a polycrystal Si film as its lower layer.
CONSTITUTION: Onto Si substrate 11 with fixed diffusion region 16 formed, SiO2 film 12 is bonded and at the center part of region 16, hole 16 for exposing region 16 with part of film 12 left is provided. Next, the wiring pattern of the two-layer structure of polycrystal Si film 13 and Al metal film 14 is bonded to the entire surface and part of film 13 is connected to region 16 via hole 16. Then, this double- layer film is patterned by photoetching to make an opening over film 12 left on region 16. As a result, even if electro-migration occurs in Al metal film 14, electric conduction can be maintained by the lower layer, poly-craytal Si film 13, and the mean operation time until a fault is prlonged 15 to 20 times that at the time of the formation of an Al film directly on the insulating film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2254979A JPS54145488A (en) | 1979-03-01 | 1979-03-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2254979A JPS54145488A (en) | 1979-03-01 | 1979-03-01 | Semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4468580A Division JPS55146947A (en) | 1980-04-07 | 1980-04-07 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54145488A true JPS54145488A (en) | 1979-11-13 |
JPS5738028B2 JPS5738028B2 (en) | 1982-08-13 |
Family
ID=12085910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2254979A Granted JPS54145488A (en) | 1979-03-01 | 1979-03-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54145488A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5678121A (en) * | 1979-11-29 | 1981-06-26 | Toshiba Corp | Manufacture of semiconductor device |
JPS584948A (en) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | Semiconductor device |
JPS5966150A (en) * | 1982-10-08 | 1984-04-14 | Toshiba Corp | Semiconductor device and manufacture thereof |
-
1979
- 1979-03-01 JP JP2254979A patent/JPS54145488A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5678121A (en) * | 1979-11-29 | 1981-06-26 | Toshiba Corp | Manufacture of semiconductor device |
JPS584948A (en) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | Semiconductor device |
JPS5966150A (en) * | 1982-10-08 | 1984-04-14 | Toshiba Corp | Semiconductor device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS5738028B2 (en) | 1982-08-13 |
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