JPS54162459A - Manufacture for semiconductor device - Google Patents

Abstract

PURPOSE: To prevent the short circuit of bump and corrosion of wiring, by removing the barrier metal layer between the bump forming regions selectively, and forming the bump after the connection of the barrier metal layer at the bump forming region through leaving it at the scribing region of substrate.

CONSTITUTION: On the substrate 51 having the element region 50, the Al layers 53, 53' are provided via the insulation film 52, the layers are coated with the SiO₂ 54, and opening 57 is made on the film 54 with the resist mask 55. The hole 56 is made on the film 54 through the hole of the mask 55. The mask 55 is removed, to form the bump forming region slightly greater than the window 57, scribing line region and the resist mask 58 opened on the junction region of the both regions. Further, the Cu layer 20 is formed, the film 20 is lifted off through the removal of the mask 58 to form the layer 20A to 20I. The gold bump electrode 60 is formed on the layer 20A 20D by coating the layers 20E and 20F 20I. With this method, the Al layer is not etched with the lift off method even on the small holes on the film 54, then the bump short-circuit is not caused at plating since no barrier metal is present at the bump forming region.

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