JPS5648147A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5648147A JPS5648147A JP12356679A JP12356679A JPS5648147A JP S5648147 A JPS5648147 A JP S5648147A JP 12356679 A JP12356679 A JP 12356679A JP 12356679 A JP12356679 A JP 12356679A JP S5648147 A JPS5648147 A JP S5648147A
- Authority
- JP
- Japan
- Prior art keywords
- alumina film
- scribe
- film
- done
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
PURPOSE:To prevent the occurrence of a short-circuit caused by scribe by a dicer by removing a metal or a positive oxide layer permitting positive oxidation on a scribe region. CONSTITUTION:An oxide film 2 on an Si substrate 1 is opened to evaporate Al3 and thin and porous alumina film is made by positive oxidation. A barrier type alumina film 5 is formed on a scribe line 7 by applying a resist mask. The Al except wiring and a scribe region is positively oxided by consisting the alumina film 5 as a mask and all Al is converted into porous alumina film 6. Finally, a photo etching is done by applying a resist mask to the alumina film 6 to open the subtrate. In this way, good scribe will be done without tearing the Al off to short- circuit with a junction wire or occurring the breaking fault of the alumina film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12356679A JPS5648147A (en) | 1979-09-26 | 1979-09-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12356679A JPS5648147A (en) | 1979-09-26 | 1979-09-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5648147A true JPS5648147A (en) | 1981-05-01 |
Family
ID=14863749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12356679A Pending JPS5648147A (en) | 1979-09-26 | 1979-09-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5648147A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5886742A (en) * | 1981-11-18 | 1983-05-24 | Nec Corp | Manufacture of semiconductor device |
EP0580368A2 (en) * | 1992-07-21 | 1994-01-26 | Seagate Technology International | Studless thin film magnetic head and process for making the same |
US5650897A (en) * | 1992-07-21 | 1997-07-22 | Seagate Technology, Inc. | Thin film magnetic head including lightning arrester and process for making the same |
-
1979
- 1979-09-26 JP JP12356679A patent/JPS5648147A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5886742A (en) * | 1981-11-18 | 1983-05-24 | Nec Corp | Manufacture of semiconductor device |
JPS6242383B2 (en) * | 1981-11-18 | 1987-09-08 | Nippon Electric Co | |
EP0580368A2 (en) * | 1992-07-21 | 1994-01-26 | Seagate Technology International | Studless thin film magnetic head and process for making the same |
EP0580368A3 (en) * | 1992-07-21 | 1996-03-20 | Seagate Technology | Studless thin film magnetic head and process for making the same |
US5650897A (en) * | 1992-07-21 | 1997-07-22 | Seagate Technology, Inc. | Thin film magnetic head including lightning arrester and process for making the same |
US5657192A (en) * | 1992-07-21 | 1997-08-12 | Seagate Technology, Inc. | Thin film magnetic head including crater for recessed structure and process for making the same |
US5659451A (en) * | 1992-07-21 | 1997-08-19 | Seagate Technology, Inc. | Studless thin film magnetic head and process for making the same |
US5820770A (en) * | 1992-07-21 | 1998-10-13 | Seagate Technology, Inc. | Thin film magnetic head including vias formed in alumina layer and process for making the same |
US5835315A (en) * | 1992-07-21 | 1998-11-10 | Seagate Technology, Inc. | Wafer including scribe line grooves for separating thin film heads and process for making the same |
EP0938079A2 (en) * | 1992-07-21 | 1999-08-25 | Seagate Technology International | Studless thin film magnetic head and process for making the same |
EP0938079A3 (en) * | 1992-07-21 | 1999-09-15 | Seagate Technology International | Studless thin film magnetic head and process for making the same |
US6059984A (en) * | 1992-07-21 | 2000-05-09 | Seagate Technology, Inc. | Process for fabricating thin film magnetic head including crater for recessed structure |
US6635184B1 (en) | 1992-07-21 | 2003-10-21 | Uri Cohen | Method for pattern-etching alumina layers and products |
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