JPS5518001A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
JPS5518001A
JPS5518001A JP8990778A JP8990778A JPS5518001A JP S5518001 A JPS5518001 A JP S5518001A JP 8990778 A JP8990778 A JP 8990778A JP 8990778 A JP8990778 A JP 8990778A JP S5518001 A JPS5518001 A JP S5518001A
Authority
JP
Japan
Prior art keywords
stepped portion
evaporated
resist
constitution
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8990778A
Other languages
Japanese (ja)
Inventor
Kazuo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8990778A priority Critical patent/JPS5518001A/en
Publication of JPS5518001A publication Critical patent/JPS5518001A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To reduce the size of device by taking out electrode leads and by laying wire without causing breakage at the stepped portion of a semiconductor substrate.
CONSTITUTION: An opening is vertically provided by the use of a resist 13 through an oxidized film 12 on a semiconductor substrate 11, and Al 15 is evaporated. After the resist has been lifted off, the opening is filled with Al 16. Then, the second Al layer is evaporated on the entire surface, and patterning is made, thereby the desired electrode-lead wirings are obtained. In this constitution, since there is no breakage in the stepped portion, the electrodes can be provided at the stepped portion having a minimum area without the tapered portion, whereby the size of the device can be reduced.
COPYRIGHT: (C)1980,JPO&Japio
JP8990778A 1978-07-25 1978-07-25 Semiconductor device and its manufacturing method Pending JPS5518001A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8990778A JPS5518001A (en) 1978-07-25 1978-07-25 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8990778A JPS5518001A (en) 1978-07-25 1978-07-25 Semiconductor device and its manufacturing method

Publications (1)

Publication Number Publication Date
JPS5518001A true JPS5518001A (en) 1980-02-07

Family

ID=13983778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8990778A Pending JPS5518001A (en) 1978-07-25 1978-07-25 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5518001A (en)

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