JPS5687986A - Solidstate image pickup device and its manufacture - Google Patents
Solidstate image pickup device and its manufactureInfo
- Publication number
- JPS5687986A JPS5687986A JP16505079A JP16505079A JPS5687986A JP S5687986 A JPS5687986 A JP S5687986A JP 16505079 A JP16505079 A JP 16505079A JP 16505079 A JP16505079 A JP 16505079A JP S5687986 A JPS5687986 A JP S5687986A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- substrate
- phosphorus glass
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 4
- 229910052698 phosphorus Inorganic materials 0.000 abstract 4
- 239000011574 phosphorus Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000011521 glass Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To increase the reliability and yield rate, by preventing phosphorus from contacting with the electrode metal, even with melting flow through the use of phosphorus glass for the flat surface, through the covering of wiring electrodes on the semiconductor substrate by the metal film connected with the scanning circuit of photoconductive film. CONSTITUTION:On a P type silicon substrate 7, diffusion layers 8, 8' and 9 are formed, to form the gate oxide film 11, field oxide film 10 and gate electrode 12. On this substrate 7, phosphorus glass PSG film 13 including 5-20% of P2O5 for SiO2 is deposited on the entire surface with the specified thickness by means of gas phase vapor deposition method, and the contact window 19' for the image and the contact window 21' for the wiring section at the surrounding are made open by using the photoetching method. Next, aluminum is vapor-deposited on the surface with a given thickness to form the specified wiring pattern and the Al electrode 18 on the film 13. Further, in taking the electric contact of the photoconductive film on the substrate 7 at the opening 17, the electrode 18 is covered with the molybdenum film 14, to prevent the phosphorus glass with melting flow from being contacted to the electrode 18.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16505079A JPS5687986A (en) | 1979-12-18 | 1979-12-18 | Solidstate image pickup device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16505079A JPS5687986A (en) | 1979-12-18 | 1979-12-18 | Solidstate image pickup device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5687986A true JPS5687986A (en) | 1981-07-17 |
Family
ID=15804873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16505079A Pending JPS5687986A (en) | 1979-12-18 | 1979-12-18 | Solidstate image pickup device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5687986A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5831670A (en) * | 1981-08-20 | 1983-02-24 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
| JPH0818025A (en) * | 1994-06-30 | 1996-01-19 | Nec Corp | Solid image pickup element |
-
1979
- 1979-12-18 JP JP16505079A patent/JPS5687986A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5831670A (en) * | 1981-08-20 | 1983-02-24 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
| JPH0347624B2 (en) * | 1981-08-20 | 1991-07-19 | Matsushita Electric Ind Co Ltd | |
| JPH0818025A (en) * | 1994-06-30 | 1996-01-19 | Nec Corp | Solid image pickup element |
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