JPS56116642A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56116642A JPS56116642A JP1899380A JP1899380A JPS56116642A JP S56116642 A JPS56116642 A JP S56116642A JP 1899380 A JP1899380 A JP 1899380A JP 1899380 A JP1899380 A JP 1899380A JP S56116642 A JPS56116642 A JP S56116642A
- Authority
- JP
- Japan
- Prior art keywords
- pad
- wiring
- corrosion
- covered
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE:To prevent a wiring from corrosion, by composing a joint pad of a metal such as Mo, etc. which has a higher corrosion resistance than a wiring layer of Al, etc., and further by providing a protective membrane with a window on the pad. CONSTITUTION:An Al wiring layer 20 is provided on an Si substrate in such a manner that its width becomes broader than the extended section at a section 20a where it contacts an Mo joint pad 14, and by doing so, wiring resistance is reduced. And then, an entire surface is covered with an Si3N4 membrane, and an opening 21a is provided on a part of the pad 14. Ni and Sn, etc. are plated on the opening 21a to provide a better joining performance with an Au wire. In this mechanism, because of the facts that the pad 14 is made of Mo whose corrosion resistance is higher than Al and that surface of the Al wire is covered with the protective membrane Al can be prevented from corrosion improving reliability of a device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP1899380A JPS56116642A (en) | 1980-02-20 | 1980-02-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1899380A JPS56116642A (en) | 1980-02-20 | 1980-02-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
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JPS56116642A true JPS56116642A (en) | 1981-09-12 |
Family
ID=11987086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1899380A Pending JPS56116642A (en) | 1980-02-20 | 1980-02-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56116642A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5659201A (en) * | 1995-06-05 | 1997-08-19 | Advanced Micro Devices, Inc. | High conductivity interconnection line |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143785A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor device |
JPS5473561A (en) * | 1977-11-24 | 1979-06-12 | Hitachi Ltd | Electrode structure of semiconductor device |
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1980
- 1980-02-20 JP JP1899380A patent/JPS56116642A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143785A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor device |
JPS5473561A (en) * | 1977-11-24 | 1979-06-12 | Hitachi Ltd | Electrode structure of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5659201A (en) * | 1995-06-05 | 1997-08-19 | Advanced Micro Devices, Inc. | High conductivity interconnection line |
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