JPS56116642A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56116642A
JPS56116642A JP1899380A JP1899380A JPS56116642A JP S56116642 A JPS56116642 A JP S56116642A JP 1899380 A JP1899380 A JP 1899380A JP 1899380 A JP1899380 A JP 1899380A JP S56116642 A JPS56116642 A JP S56116642A
Authority
JP
Japan
Prior art keywords
pad
wiring
corrosion
covered
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1899380A
Other languages
Japanese (ja)
Inventor
Akira Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1899380A priority Critical patent/JPS56116642A/en
Publication of JPS56116642A publication Critical patent/JPS56116642A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2924/049Nitrides composed of metals from groups of the periodic table
    • H01L2924/050414th Group
    • H01L2924/05042Si3N4

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent a wiring from corrosion, by composing a joint pad of a metal such as Mo, etc. which has a higher corrosion resistance than a wiring layer of Al, etc., and further by providing a protective membrane with a window on the pad. CONSTITUTION:An Al wiring layer 20 is provided on an Si substrate in such a manner that its width becomes broader than the extended section at a section 20a where it contacts an Mo joint pad 14, and by doing so, wiring resistance is reduced. And then, an entire surface is covered with an Si3N4 membrane, and an opening 21a is provided on a part of the pad 14. Ni and Sn, etc. are plated on the opening 21a to provide a better joining performance with an Au wire. In this mechanism, because of the facts that the pad 14 is made of Mo whose corrosion resistance is higher than Al and that surface of the Al wire is covered with the protective membrane Al can be prevented from corrosion improving reliability of a device.
JP1899380A 1980-02-20 1980-02-20 Semiconductor device Pending JPS56116642A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1899380A JPS56116642A (en) 1980-02-20 1980-02-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1899380A JPS56116642A (en) 1980-02-20 1980-02-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56116642A true JPS56116642A (en) 1981-09-12

Family

ID=11987086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1899380A Pending JPS56116642A (en) 1980-02-20 1980-02-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56116642A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5659201A (en) * 1995-06-05 1997-08-19 Advanced Micro Devices, Inc. High conductivity interconnection line

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143785A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor device
JPS5473561A (en) * 1977-11-24 1979-06-12 Hitachi Ltd Electrode structure of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143785A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor device
JPS5473561A (en) * 1977-11-24 1979-06-12 Hitachi Ltd Electrode structure of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5659201A (en) * 1995-06-05 1997-08-19 Advanced Micro Devices, Inc. High conductivity interconnection line

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