JPS5617061A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5617061A
JPS5617061A JP9358679A JP9358679A JPS5617061A JP S5617061 A JPS5617061 A JP S5617061A JP 9358679 A JP9358679 A JP 9358679A JP 9358679 A JP9358679 A JP 9358679A JP S5617061 A JPS5617061 A JP S5617061A
Authority
JP
Japan
Prior art keywords
electrode
hole
coated
film
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9358679A
Other languages
Japanese (ja)
Inventor
Makoto Tanaka
Yuji Kusano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9358679A priority Critical patent/JPS5617061A/en
Publication of JPS5617061A publication Critical patent/JPS5617061A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To eliminate the reaction of a substrate with an electrode in the semiconductor device by coating an insulating film on the entire surface of a semiconductor substrate, perforating contact hole in a diffused region, and coating an electrode through a barrier layer extended to the edge of the barrier layer or film having smaller hole in the contact hole when coating the electrode thereon. CONSTITUTION:A p-type region is diffused in an n-type Si substrate 1, an insulating film 2 is coated on the entire surface thereof, a contact hole 3 is perforated on a p-type region, and an Au electrode 5' is coated when mounting the electrode thereon as follows: That is, a Ti-W alloy buffer layer 4' having smaller area than the hole 3 is formed on the p-type region exposed on the hole 3, or the hole 3 is buried and is extended from the buffer layer 4' to the edge of the film 2, an Au electrode 5' is coated thereon, and an insulation protective film 7 is coated thereon. In this manner, the reaction of the Au wire the Si is not taken place to eliminate the deterioration of the characteristics of the semiconductor element.
JP9358679A 1979-07-20 1979-07-20 Semiconductor device Pending JPS5617061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9358679A JPS5617061A (en) 1979-07-20 1979-07-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9358679A JPS5617061A (en) 1979-07-20 1979-07-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5617061A true JPS5617061A (en) 1981-02-18

Family

ID=14086380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9358679A Pending JPS5617061A (en) 1979-07-20 1979-07-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5617061A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63167263A (en) * 1986-12-27 1988-07-11 Toho Denshi Kk Sound wave type moisture content sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63167263A (en) * 1986-12-27 1988-07-11 Toho Denshi Kk Sound wave type moisture content sensor

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