JPS5533024A - Semiconductor device for converting pressure - Google Patents
Semiconductor device for converting pressureInfo
- Publication number
- JPS5533024A JPS5533024A JP10477678A JP10477678A JPS5533024A JP S5533024 A JPS5533024 A JP S5533024A JP 10477678 A JP10477678 A JP 10477678A JP 10477678 A JP10477678 A JP 10477678A JP S5533024 A JPS5533024 A JP S5533024A
- Authority
- JP
- Japan
- Prior art keywords
- film
- support member
- diaphragm part
- parts
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Pressure Sensors (AREA)
Abstract
PURPOSE: To raise the reliability of a semiconductor device for pressure conversion, by coating a diaphragm part with an insulating film, coating the insulating film with a thin metal film which resists humidity, acid and alkali and extends to a support member, and providing another insulating substance on electrodes located at both the ends of the diaphragm part.
CONSTITUTION: Strain gauge parts 13 and electroconductive layers 14, which connect the parts 13 to the support member 12 made of silicon crystal, are produced by diffusion in the top part of the support member. An opening 17 is made on the bottom of the support member 12 by etching. the diaphragm part 11 of small thickness is located on the opening 17. An SiO2 film 15 or the like is coated on the entire surface of the diaphragm part 11. Holes are opened in the SiO2 film 15 over the strain gauge parts 13. The electrodes 16 are fitted in the holes and connected with lead wires 24. The thin metal film 18, which is made of gold or other metal and has a high resistance to humidity, acid and alkali, is coated on the film 15. The insulating substance such as silicone rubber is provided on the electrodes 16. The foot parts of the support member 12 are attached by a bonding agent 22 to a mount 21 having a hole 23.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10477678A JPS5533024A (en) | 1978-08-28 | 1978-08-28 | Semiconductor device for converting pressure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10477678A JPS5533024A (en) | 1978-08-28 | 1978-08-28 | Semiconductor device for converting pressure |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5533024A true JPS5533024A (en) | 1980-03-08 |
JPS6222466B2 JPS6222466B2 (en) | 1987-05-18 |
Family
ID=14389873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10477678A Granted JPS5533024A (en) | 1978-08-28 | 1978-08-28 | Semiconductor device for converting pressure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5533024A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02296373A (en) * | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | Semiconductor device |
JPH03229470A (en) * | 1990-02-02 | 1991-10-11 | Nippondenso Co Ltd | Semiconductor pressure sensor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS506281A (en) * | 1973-05-18 | 1975-01-22 | ||
JPS5186986A (en) * | 1975-01-29 | 1976-07-30 | Tokyo Shibaura Electric Co | HANDOTAIATSURYOKUHENKANSOCHI |
JPS51140582A (en) * | 1975-05-30 | 1976-12-03 | Nec Corp | Semiconductor resistance element |
-
1978
- 1978-08-28 JP JP10477678A patent/JPS5533024A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS506281A (en) * | 1973-05-18 | 1975-01-22 | ||
JPS5186986A (en) * | 1975-01-29 | 1976-07-30 | Tokyo Shibaura Electric Co | HANDOTAIATSURYOKUHENKANSOCHI |
JPS51140582A (en) * | 1975-05-30 | 1976-12-03 | Nec Corp | Semiconductor resistance element |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02296373A (en) * | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | Semiconductor device |
JPH03229470A (en) * | 1990-02-02 | 1991-10-11 | Nippondenso Co Ltd | Semiconductor pressure sensor |
Also Published As
Publication number | Publication date |
---|---|
JPS6222466B2 (en) | 1987-05-18 |
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