JPS5533024A - Semiconductor device for converting pressure - Google Patents

Semiconductor device for converting pressure

Info

Publication number
JPS5533024A
JPS5533024A JP10477678A JP10477678A JPS5533024A JP S5533024 A JPS5533024 A JP S5533024A JP 10477678 A JP10477678 A JP 10477678A JP 10477678 A JP10477678 A JP 10477678A JP S5533024 A JPS5533024 A JP S5533024A
Authority
JP
Japan
Prior art keywords
film
support member
diaphragm part
parts
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10477678A
Other languages
Japanese (ja)
Other versions
JPS6222466B2 (en
Inventor
Shoichi Kakimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10477678A priority Critical patent/JPS5533024A/en
Publication of JPS5533024A publication Critical patent/JPS5533024A/en
Publication of JPS6222466B2 publication Critical patent/JPS6222466B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Pressure Sensors (AREA)

Abstract

PURPOSE: To raise the reliability of a semiconductor device for pressure conversion, by coating a diaphragm part with an insulating film, coating the insulating film with a thin metal film which resists humidity, acid and alkali and extends to a support member, and providing another insulating substance on electrodes located at both the ends of the diaphragm part.
CONSTITUTION: Strain gauge parts 13 and electroconductive layers 14, which connect the parts 13 to the support member 12 made of silicon crystal, are produced by diffusion in the top part of the support member. An opening 17 is made on the bottom of the support member 12 by etching. the diaphragm part 11 of small thickness is located on the opening 17. An SiO2 film 15 or the like is coated on the entire surface of the diaphragm part 11. Holes are opened in the SiO2 film 15 over the strain gauge parts 13. The electrodes 16 are fitted in the holes and connected with lead wires 24. The thin metal film 18, which is made of gold or other metal and has a high resistance to humidity, acid and alkali, is coated on the film 15. The insulating substance such as silicone rubber is provided on the electrodes 16. The foot parts of the support member 12 are attached by a bonding agent 22 to a mount 21 having a hole 23.
COPYRIGHT: (C)1980,JPO&Japio
JP10477678A 1978-08-28 1978-08-28 Semiconductor device for converting pressure Granted JPS5533024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10477678A JPS5533024A (en) 1978-08-28 1978-08-28 Semiconductor device for converting pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10477678A JPS5533024A (en) 1978-08-28 1978-08-28 Semiconductor device for converting pressure

Publications (2)

Publication Number Publication Date
JPS5533024A true JPS5533024A (en) 1980-03-08
JPS6222466B2 JPS6222466B2 (en) 1987-05-18

Family

ID=14389873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10477678A Granted JPS5533024A (en) 1978-08-28 1978-08-28 Semiconductor device for converting pressure

Country Status (1)

Country Link
JP (1) JPS5533024A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02296373A (en) * 1989-05-10 1990-12-06 Mitsubishi Electric Corp Semiconductor device
JPH03229470A (en) * 1990-02-02 1991-10-11 Nippondenso Co Ltd Semiconductor pressure sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506281A (en) * 1973-05-18 1975-01-22
JPS5186986A (en) * 1975-01-29 1976-07-30 Tokyo Shibaura Electric Co HANDOTAIATSURYOKUHENKANSOCHI
JPS51140582A (en) * 1975-05-30 1976-12-03 Nec Corp Semiconductor resistance element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506281A (en) * 1973-05-18 1975-01-22
JPS5186986A (en) * 1975-01-29 1976-07-30 Tokyo Shibaura Electric Co HANDOTAIATSURYOKUHENKANSOCHI
JPS51140582A (en) * 1975-05-30 1976-12-03 Nec Corp Semiconductor resistance element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02296373A (en) * 1989-05-10 1990-12-06 Mitsubishi Electric Corp Semiconductor device
JPH03229470A (en) * 1990-02-02 1991-10-11 Nippondenso Co Ltd Semiconductor pressure sensor

Also Published As

Publication number Publication date
JPS6222466B2 (en) 1987-05-18

Similar Documents

Publication Publication Date Title
US4814856A (en) Integral transducer structures employing high conductivity surface features
US5600071A (en) Vertically integrated sensor structure and method
US5002901A (en) Method of making integral transducer structures employing high conductivity surface features
JPS6153876B2 (en)
JPS5533024A (en) Semiconductor device for converting pressure
JPS5451490A (en) Semiconductor pressure converter
JPS60200154A (en) Isfet sensor and manufacture thereof
JPS5445570A (en) Manufacture for semiconductor element
JPS54129889A (en) Strain measuring unit
JPS54133877A (en) Semiconductor device
JPS54117680A (en) Semiconductor device
JPS55103440A (en) Semiconductor pressure sensor
JPS54103684A (en) Production of semiconductor pressure transducing element
JPS5710951A (en) Semiconductor device
JPS6097677A (en) Semiconductor pressure sensor
JPH02237166A (en) Semiconductor pressure sensor
JPS56148870A (en) Semiconductor presssure converter
JP3099584B2 (en) Manufacturing method of surface pressure type semiconductor pressure sensor
JPS56105670A (en) Semiconductor device
JPS57135330A (en) Stress converter
JPS54121670A (en) Semiconductor device and its manufacture
JP2838914B2 (en) Manufacturing method of semiconductor pressure sensor
JPS5696875A (en) Semiconductor pressure sensing device and manufacture thereof
JPS5598840A (en) Electroconductive structure for semiconductor device
JPS5821380A (en) Manufacture of semiconductor pressure transducer