JPS54129889A - Strain measuring unit - Google Patents
Strain measuring unitInfo
- Publication number
- JPS54129889A JPS54129889A JP3662378A JP3662378A JPS54129889A JP S54129889 A JPS54129889 A JP S54129889A JP 3662378 A JP3662378 A JP 3662378A JP 3662378 A JP3662378 A JP 3662378A JP S54129889 A JPS54129889 A JP S54129889A
- Authority
- JP
- Japan
- Prior art keywords
- gauge
- bonding
- strain
- chip
- strain body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE: To increase the dielectric strength between the gauge and the strain body, by bonding the glass with the gauge by anodic bonding and performing bonding with use of eutectic alloy caused between the gauge and the strain body, in bonding the semiconductor strain gauge with the metal strain body.
CONSTITUTION: The resistor body 22 is formed in the semiconductor strain gauge chip 21 with diffusion or ion injection, and it is covered with the oxide film 22. Further, opening is made at a given region of the film 23, and the electrodes 24 and 25 to flow current to the resistor body from external are attached, and the metal fine wires 26 and 27 connected to the external electrodes are formed. At the rear side of the chip 21 with this constitution, the glass 28 with anodic bonding having very closer coefficient as the line expansion coefficient of the chip 21 is coated, and this is bonded to the metal strain body 20 via the eutectic alloy layer 29 such as Au-Si and Au-Sn bonded with it. Thus, even with the unevenness due to processing on the surface of the strain body 20, total contact is made possible and no dielectric strength is lowered.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3662378A JPS54129889A (en) | 1978-03-31 | 1978-03-31 | Strain measuring unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3662378A JPS54129889A (en) | 1978-03-31 | 1978-03-31 | Strain measuring unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54129889A true JPS54129889A (en) | 1979-10-08 |
Family
ID=12474932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3662378A Pending JPS54129889A (en) | 1978-03-31 | 1978-03-31 | Strain measuring unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54129889A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003031907A1 (en) * | 2001-10-02 | 2003-04-17 | Matsushita Electric Industrial Co., Ltd. | Strain sensor and method of producing the same |
WO2009028283A1 (en) * | 2007-08-27 | 2009-03-05 | Hitachi Metals, Ltd. | Semiconductor strain sensor |
JP2009075039A (en) * | 2007-09-25 | 2009-04-09 | Hitachi Metals Ltd | Semiconductor strain sensor, and attaching method of semiconductor strain sensor |
JP2009109337A (en) * | 2007-10-30 | 2009-05-21 | Minebea Co Ltd | Bend sensor |
JP2016053541A (en) * | 2014-09-04 | 2016-04-14 | 横河電機株式会社 | Sensor device, strain sensor device, and pressure sensor device |
CN111406196A (en) * | 2017-09-29 | 2020-07-10 | 美蓓亚三美株式会社 | Strain gauge |
-
1978
- 1978-03-31 JP JP3662378A patent/JPS54129889A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003031907A1 (en) * | 2001-10-02 | 2003-04-17 | Matsushita Electric Industrial Co., Ltd. | Strain sensor and method of producing the same |
US7010986B2 (en) | 2001-10-02 | 2006-03-14 | Matsushita Electric Industrial Co., Ltd. | Strain sensor and method of producing the same |
US7181831B2 (en) | 2001-10-02 | 2007-02-27 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing strain sensor |
WO2009028283A1 (en) * | 2007-08-27 | 2009-03-05 | Hitachi Metals, Ltd. | Semiconductor strain sensor |
US8438931B2 (en) | 2007-08-27 | 2013-05-14 | Hitachi, Ltd. | Semiconductor strain sensor |
JP2009075039A (en) * | 2007-09-25 | 2009-04-09 | Hitachi Metals Ltd | Semiconductor strain sensor, and attaching method of semiconductor strain sensor |
JP2009109337A (en) * | 2007-10-30 | 2009-05-21 | Minebea Co Ltd | Bend sensor |
JP2016053541A (en) * | 2014-09-04 | 2016-04-14 | 横河電機株式会社 | Sensor device, strain sensor device, and pressure sensor device |
CN111406196A (en) * | 2017-09-29 | 2020-07-10 | 美蓓亚三美株式会社 | Strain gauge |
CN111406196B (en) * | 2017-09-29 | 2022-03-29 | 美蓓亚三美株式会社 | Strain gauge |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1510294A (en) | Passivated and encapsulated semiconductors and method of making same | |
JPS54129889A (en) | Strain measuring unit | |
JPS57107059A (en) | Semiconductor package | |
JPS57136132A (en) | Semiconductor pressure transducer | |
JPS5739548A (en) | Semiconductor device | |
JPS5643816A (en) | Structure of bonding pad part | |
JPS60150657A (en) | Resin molded semiconductor device | |
JPS57114248A (en) | Semiconductor device | |
JPS5745262A (en) | Sealing and fitting structure of semiconductor device | |
JPS6468935A (en) | Face-down bonding of semiconductor integrated circuit device | |
JPS6175535A (en) | Semiconductor device | |
JPS56105670A (en) | Semiconductor device | |
JPS6482640A (en) | Semiconductor integrated circuit | |
JPS57114242A (en) | Semiconductor device | |
JPS5314558A (en) | Semiconductor device | |
JPS5798827A (en) | Thin film thermistor | |
JPS5771139A (en) | Semiconductor device | |
JPS53147463A (en) | Production of semiconductor device | |
JPS5515213A (en) | Manufacturing method for semiconductor device | |
JPS57120386A (en) | Semiconductor device | |
JPS57111041A (en) | Semiconductor device | |
JPS5533024A (en) | Semiconductor device for converting pressure | |
JPS57208152A (en) | Semiconductor wafer | |
JPS5447476A (en) | Semiconductor device | |
JPS6463832A (en) | Semiconductor pressure transducer and manufacture thereof |