JPS54129889A - Strain measuring unit - Google Patents

Strain measuring unit

Info

Publication number
JPS54129889A
JPS54129889A JP3662378A JP3662378A JPS54129889A JP S54129889 A JPS54129889 A JP S54129889A JP 3662378 A JP3662378 A JP 3662378A JP 3662378 A JP3662378 A JP 3662378A JP S54129889 A JPS54129889 A JP S54129889A
Authority
JP
Japan
Prior art keywords
gauge
bonding
strain
chip
strain body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3662378A
Other languages
Japanese (ja)
Inventor
Kazuji Yamada
Yasumasa Matsuda
Satoshi Shimada
Masanori Tanabe
Motohisa Nishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3662378A priority Critical patent/JPS54129889A/en
Publication of JPS54129889A publication Critical patent/JPS54129889A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE: To increase the dielectric strength between the gauge and the strain body, by bonding the glass with the gauge by anodic bonding and performing bonding with use of eutectic alloy caused between the gauge and the strain body, in bonding the semiconductor strain gauge with the metal strain body.
CONSTITUTION: The resistor body 22 is formed in the semiconductor strain gauge chip 21 with diffusion or ion injection, and it is covered with the oxide film 22. Further, opening is made at a given region of the film 23, and the electrodes 24 and 25 to flow current to the resistor body from external are attached, and the metal fine wires 26 and 27 connected to the external electrodes are formed. At the rear side of the chip 21 with this constitution, the glass 28 with anodic bonding having very closer coefficient as the line expansion coefficient of the chip 21 is coated, and this is bonded to the metal strain body 20 via the eutectic alloy layer 29 such as Au-Si and Au-Sn bonded with it. Thus, even with the unevenness due to processing on the surface of the strain body 20, total contact is made possible and no dielectric strength is lowered.
COPYRIGHT: (C)1979,JPO&Japio
JP3662378A 1978-03-31 1978-03-31 Strain measuring unit Pending JPS54129889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3662378A JPS54129889A (en) 1978-03-31 1978-03-31 Strain measuring unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3662378A JPS54129889A (en) 1978-03-31 1978-03-31 Strain measuring unit

Publications (1)

Publication Number Publication Date
JPS54129889A true JPS54129889A (en) 1979-10-08

Family

ID=12474932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3662378A Pending JPS54129889A (en) 1978-03-31 1978-03-31 Strain measuring unit

Country Status (1)

Country Link
JP (1) JPS54129889A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003031907A1 (en) * 2001-10-02 2003-04-17 Matsushita Electric Industrial Co., Ltd. Strain sensor and method of producing the same
WO2009028283A1 (en) * 2007-08-27 2009-03-05 Hitachi Metals, Ltd. Semiconductor strain sensor
JP2009075039A (en) * 2007-09-25 2009-04-09 Hitachi Metals Ltd Semiconductor strain sensor, and attaching method of semiconductor strain sensor
JP2009109337A (en) * 2007-10-30 2009-05-21 Minebea Co Ltd Bend sensor
JP2016053541A (en) * 2014-09-04 2016-04-14 横河電機株式会社 Sensor device, strain sensor device, and pressure sensor device
CN111406196A (en) * 2017-09-29 2020-07-10 美蓓亚三美株式会社 Strain gauge

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003031907A1 (en) * 2001-10-02 2003-04-17 Matsushita Electric Industrial Co., Ltd. Strain sensor and method of producing the same
US7010986B2 (en) 2001-10-02 2006-03-14 Matsushita Electric Industrial Co., Ltd. Strain sensor and method of producing the same
US7181831B2 (en) 2001-10-02 2007-02-27 Matsushita Electric Industrial Co., Ltd. Method of manufacturing strain sensor
WO2009028283A1 (en) * 2007-08-27 2009-03-05 Hitachi Metals, Ltd. Semiconductor strain sensor
US8438931B2 (en) 2007-08-27 2013-05-14 Hitachi, Ltd. Semiconductor strain sensor
JP2009075039A (en) * 2007-09-25 2009-04-09 Hitachi Metals Ltd Semiconductor strain sensor, and attaching method of semiconductor strain sensor
JP2009109337A (en) * 2007-10-30 2009-05-21 Minebea Co Ltd Bend sensor
JP2016053541A (en) * 2014-09-04 2016-04-14 横河電機株式会社 Sensor device, strain sensor device, and pressure sensor device
CN111406196A (en) * 2017-09-29 2020-07-10 美蓓亚三美株式会社 Strain gauge
CN111406196B (en) * 2017-09-29 2022-03-29 美蓓亚三美株式会社 Strain gauge

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