JPS60150657A - Resin molded semiconductor device - Google Patents

Resin molded semiconductor device

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Publication number
JPS60150657A
JPS60150657A JP59005570A JP557084A JPS60150657A JP S60150657 A JPS60150657 A JP S60150657A JP 59005570 A JP59005570 A JP 59005570A JP 557084 A JP557084 A JP 557084A JP S60150657 A JPS60150657 A JP S60150657A
Authority
JP
Japan
Prior art keywords
aluminum
resin
moisture
semiconductor device
aluminum electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59005570A
Other languages
Japanese (ja)
Inventor
Toru Yoshida
亨 吉田
Kiyoshi Matsui
清 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59005570A priority Critical patent/JPS60150657A/en
Publication of JPS60150657A publication Critical patent/JPS60150657A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/4952—Additional leads the additional leads being a bump or a wire
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43827—Chemical vapour deposition [CVD], e.g. laser CVD
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
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    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To improve reliability on the damp-proofness of a resin molded semiconductor device by using a small-gage wire in which the surface of a gold wire is coated with aluminum. CONSTITUTION:An aluminum electrode 2 and an silicon nitride film 6 are formed on a semiconductor base body 1, and the silicon nitride film 6 in a bonding section is removed. Such a semiconductor element is fixed on a lead frame, and a small-gage wire in which aluminum 7 is evaporated on the surface of a gold wire 4 is bonded, and molded with a resin. Consequently, when moisture intruding to the interface between the resin and the lead frame from the outside reaches to the interface between the resin and the gold wire 4 coated with aluminum 7, aluminum 7 dissolves, and moisture contains a saturated quantity of aluminum ions. Accordingly, when moisture further reaches to the aluminum electrode 2, the aluminum electrode 2 is not corroded because aluminum is brought previously to a sufficiently saturated state.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は半導体素子をレジンで覆ってなる半導体装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a semiconductor device in which a semiconductor element is covered with a resin.

〔発明の背景〕[Background of the invention]

従来レジンモールド半導体装置は半導体素子領域を有す
る半導体基体上にアルミニウム電極を形成後、基体全体
を外気や湿気から保護するためエポキシ樹脂々どのレジ
ンによりモールドすることが行われている。第１図は従
来公知のレジンモールド半導体装置の一例の断面を示す
。Conventionally, in a resin molded semiconductor device, an aluminum electrode is formed on a semiconductor substrate having a semiconductor element region, and then the entire substrate is molded with a resin such as epoxy resin in order to protect the substrate from outside air and moisture. FIG. 1 shows a cross section of an example of a conventionally known resin molded semiconductor device.

同図において１は半導体基体、２はアルミニウム電極、
３はリードフレーム、４は金線、５はレジンである。In the figure, 1 is a semiconductor substrate, 2 is an aluminum electrode,
3 is a lead frame, 4 is a gold wire, and 5 is a resin.

この様な構成のレジンモールド半導体装置においては、
レジン５が本質的に透湿、吸湿性を有すること、異種材
料の組合せのため、熱的、機械的ストレスにより異種材
料間の界面剥離が生じ易く、その界面より水分が侵入す
る危険性を有すること等の欠点がある。このため侵入し
た水分により、アルミニウム電極２が腐食し、断線不良
が発生し易い。In a resin molded semiconductor device with such a configuration,
Because the resin 5 is inherently moisture permeable and hygroscopic, and because it is a combination of different materials, thermal and mechanical stress tends to cause interfacial delamination between the different materials, and there is a risk of moisture infiltrating through that interface. There are drawbacks such as: For this reason, the aluminum electrode 2 is corroded by the moisture that has entered, and disconnection is likely to occur.

この様なレジンモールド半導体装置の欠点を解決する方
法として、アルミニウム電極２の上に保護膜を形成する
手段が一般に用いられている。この保護膜は例えばプラ
ズマＣＶＤ（ＣｈｅｍｉｃａｌＶａｐｅｒ　Ｄｅｐｏｓ
ｉｔｉｏｎ　）　テ成長さセタシリコン窒化膜であり、
透湿率が極めて小さいため、下地のアルミニウム電極の
腐食防止に有効である。しかし、第２図に示す様に金線
４をアルミニウム電極２にボンディングする部分は上記
保護膜６をエツチングによシ除去するため、アルミニウ
ム電極２の一部が露出し、侵入水分により腐食する危険
性を有する。特に近年半導体基体１が大形化するのに対
し、レジンモールド半導体装置全体の外形は変らないた
めに、第１図において、レジン５とリードフレーム３、
金線４との界面を水分が侵入する際の侵入経路が短くな
ってお□す、上記アルミニウム電極の金線ボンディング
部分の腐食は従来のレジンモールド半導体装置の最大の
欠点となっている。As a method of solving such drawbacks of resin molded semiconductor devices, a method of forming a protective film on the aluminum electrode 2 is generally used. This protective film is formed by, for example, plasma CVD (Chemical Vaper Deposits).
tion) is a silicon nitride film grown by
Since its moisture permeability is extremely low, it is effective in preventing corrosion of the underlying aluminum electrode. However, as shown in FIG. 2, since the protective film 6 is removed by etching at the part where the gold wire 4 is bonded to the aluminum electrode 2, a part of the aluminum electrode 2 is exposed and there is a risk of corrosion due to intruding moisture. have sex. In particular, although the semiconductor substrate 1 has become larger in recent years, the overall external shape of the resin molded semiconductor device remains unchanged.
Corrosion of the gold wire bonding portion of the aluminum electrode is the biggest drawback of conventional resin molded semiconductor devices, as the path for moisture to enter through the interface with the gold wire 4 is shortened.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、上記した従来技術の欠点を３なくシ、
レジンモールド半導体装置の耐湿信頼性を改善する方法
を提供するにある。The object of the present invention is to eliminate the three drawbacks of the prior art described above, and to
An object of the present invention is to provide a method for improving the moisture resistance reliability of a resin molded semiconductor device.

〔発明の概要〕 上記従来技術の欠点をなくシ、上記目的を達成するため
に、本発明は水分侵入の重要な経路であるレジンと金線
との界面に着目し、金線の表面にアルミニウムを被覆し
た細線を用いることによシ、水分侵入途中で水分中にア
ルミニウムイオンが飽和量含まれる様にして、上記アル
ミニウム電極に到達した水分のアルミニウム腐食を無く
するようにしたものである。[Summary of the Invention] In order to eliminate the drawbacks of the above-mentioned prior art and achieve the above objects, the present invention focuses on the interface between the resin and the gold wire, which is an important route for moisture intrusion, and adds aluminum to the surface of the gold wire. By using a thin wire coated with aluminum, aluminum ions are contained in the water in a saturated amount during the water intrusion, thereby eliminating corrosion of aluminum by the water that reaches the aluminum electrode.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第３図により説明する。 An embodiment of the present invention will be described below with reference to FIG.

半導体基体１上には従来技術を用いてアルミニウム電極
２、シリコン窒化膜６を施し、ボンディング部分のシリ
コン窒化膜を除去する。かかる半導体素子を第１図の如
くリードフレーム３上に固着した後、金線４０表面にア
ルミニウム７を蒸着した細線をボンディングする。その
後レジンでモールドする。An aluminum electrode 2 and a silicon nitride film 6 are formed on the semiconductor substrate 1 using a conventional technique, and the silicon nitride film at the bonding portion is removed. After the semiconductor element is fixed on the lead frame 3 as shown in FIG. 1, a fine wire on which aluminum 7 is vapor-deposited is bonded to the surface of the gold wire 40. Then mold it with resin.

本実施例に示した構成を持つレジンモールド半導体装置
においては、外部よりレジンとＩＪ−ドフレームとの界
面に侵入した水分がレジンとアルミニウム７を被覆した
金線との界面に到達すると、アルミニウム７が溶解し、
水分はアルミニウムイオンを飽和量含むようになる。従
ってさらに水分がアルミニウム電極２に到達するときは
十分な飽和状態となっているためにアルミニウム電極の
腐食は生じない。In the resin molded semiconductor device having the configuration shown in this embodiment, when moisture that has entered the interface between the resin and the IJ-deframe from the outside reaches the interface between the resin and the gold wire covering the aluminum 7, the aluminum 7 dissolves,
The water comes to contain a saturated amount of aluminum ions. Therefore, when further water reaches the aluminum electrode 2, the aluminum electrode is sufficiently saturated and no corrosion of the aluminum electrode occurs.

〔発明の効果〕〔Effect of the invention〕

本発明ｌこよれば、レジンとボンディング細線との界面
よりアルミニウム電極へと侵入する水分中にアルミニー
ラムイオンを飽和量含ませることができるため、アルミ
ニウム電極の腐食を防止し、レジンモールド半導体装置
の耐湿信頼性を向上させることができる。According to the present invention, aluminum ions can be contained in a saturated amount in the moisture that enters the aluminum electrode from the interface between the resin and the bonding thin wire, thereby preventing corrosion of the aluminum electrode and molding the resin molded semiconductor device. can improve moisture resistance reliability.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来技術によるレジンモールド半導体装置の断
面図、第２図は従来技術による金線ボンディング部の断
面図、第３図は本発明の一実施例の細線ポンディング部
の断面図である。 １・・半導体基体、　２・・・アルミニウム電極、３・
・・リードフレーム、　４　・ＩＪｍ、ｓ・・・レジン
、第　１図 躬２層 第」FIG. 1 is a sectional view of a resin molded semiconductor device according to the prior art, FIG. 2 is a sectional view of a gold wire bonding part according to the prior art, and FIG. 3 is a sectional view of a thin wire bonding part of an embodiment of the present invention. . 1. Semiconductor substrate, 2. Aluminum electrode, 3.
・Lead frame, 4 ・IJm, s...Resin, Figure 1 2nd layer

Claims (1)

【特許請求の範囲】[Claims] １、　アルミニウム電極を有するレジンモールド半導体
装置において、上記アルミニウム電極とリードフレーム
とを電気的に接続するために、金線の表面にＭを被覆し
たワイヤを用いることにより、レジンと上記ワイヤとの
界面よシ侵入する水分が、前記アルミニウム電極に到達
するまでにアルミニウムイオンを飽和量含むように構成
したことを特徴とするレジンモールド半導体装置。1. In a resin molded semiconductor device having an aluminum electrode, in order to electrically connect the aluminum electrode and the lead frame, by using a wire whose surface is coated with M, the interface between the resin and the wire is 1. A resin molded semiconductor device, characterized in that the moisture that enters the device contains a saturated amount of aluminum ions by the time it reaches the aluminum electrode.
JP59005570A 1984-01-18 1984-01-18 Resin molded semiconductor device Pending JPS60150657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59005570A JPS60150657A (en) 1984-01-18 1984-01-18 Resin molded semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59005570A JPS60150657A (en) 1984-01-18 1984-01-18 Resin molded semiconductor device

Publications (1)

Publication Number Publication Date
JPS60150657A true JPS60150657A (en) 1985-08-08

Family

ID=11614870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59005570A Pending JPS60150657A (en) 1984-01-18 1984-01-18 Resin molded semiconductor device

Country Status (1)

Country Link
JP (1) JPS60150657A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073210A (en) * 1989-05-26 1991-12-17 The General Electric Company, P.L.C. Method of making electrical conductors
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US6150186A (en) * 1995-05-26 2000-11-21 Formfactor, Inc. Method of making a product with improved material properties by moderate heat-treatment of a metal incorporating a dilute additive
US6680545B2 (en) 2000-07-31 2004-01-20 Koninklijke Philips Electronics N.V. Semiconductor devices
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073210A (en) * 1989-05-26 1991-12-17 The General Electric Company, P.L.C. Method of making electrical conductors
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6150186A (en) * 1995-05-26 2000-11-21 Formfactor, Inc. Method of making a product with improved material properties by moderate heat-treatment of a metal incorporating a dilute additive
US6680545B2 (en) 2000-07-31 2004-01-20 Koninklijke Philips Electronics N.V. Semiconductor devices

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