JPH0567069B2 - - Google Patents
Info
- Publication number
- JPH0567069B2 JPH0567069B2 JP62192832A JP19283287A JPH0567069B2 JP H0567069 B2 JPH0567069 B2 JP H0567069B2 JP 62192832 A JP62192832 A JP 62192832A JP 19283287 A JP19283287 A JP 19283287A JP H0567069 B2 JPH0567069 B2 JP H0567069B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead
- resin body
- metal layer
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011347 resin Substances 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は樹脂封止型半導体装置に関し、特に耐
湿性を有する樹脂封止型半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device, and particularly to a moisture-resistant resin-sealed semiconductor device.
樹脂封止型半導体装置は、量産性にすぐれ、材
料費が安い等の利点がある反面耐湿性については
やや難点がある。
Resin-sealed semiconductor devices have advantages such as excellent mass production and low material costs, but have some drawbacks in terms of moisture resistance.
第２図は従来の樹脂封止型半導体装置の一例を
示す断面図である。 FIG. 2 is a sectional view showing an example of a conventional resin-sealed semiconductor device.
第２図に示すように、リードフレームのアイラ
ンド１の上に半導体チツプ２と搭載し、半導体チ
ツプ２の電極と前記リードフレームのリード３の
内側先端部との間をボンデイング線４で電気的に
接続する。次に、アイランド１及びリード３の内
側先端部を含んでトランスフアモールド法により
樹脂体５が封止し樹脂封止型半導体装置を構成す
る。 As shown in FIG. 2, a semiconductor chip 2 is mounted on an island 1 of a lead frame, and bonding wires 4 are used to electrically connect the electrodes of the semiconductor chip 2 and the inner tips of the leads 3 of the lead frame. Connecting. Next, a resin body 5 is sealed including the island 1 and the inner tip portions of the leads 3 by a transfer molding method to form a resin-sealed semiconductor device.
上述した従来の樹脂封止型半導体装置は、樹脂
が本来もつている性質の、水の透過のために、実
装時の半田付けによる熱衝撃によつて樹脂中に含
まれた水分の急激な気化を生じ局部的（リード先
端、半導体チツプの角など）に樹脂の弾性限度を
超える応力がかかり、樹脂割れを起こし、半導体
の耐湿性を低下させたり、樹脂を透過した水分が
樹脂中に含まれる微量の塩素と反応して半導体チ
ツプ上のアルミニウム配線を腐食し、アルミニウ
ム配線を断線を引き起すことなどの問題点があ
る。
In the conventional resin-sealed semiconductor device described above, water contained in the resin is rapidly vaporized due to thermal shock caused by soldering during mounting due to the inherent property of resin that allows water to pass through. Stress that exceeds the elastic limit of the resin is applied to localized areas (lead tips, corners of semiconductor chips, etc.), causing resin cracks and reducing the moisture resistance of the semiconductor, or moisture that has permeated through the resin is contained in the resin. There are problems in that it reacts with trace amounts of chlorine and corrodes the aluminum wiring on the semiconductor chip, causing disconnection of the aluminum wiring.
本発明の樹脂封止型半導体装置は、リードフレ
ームのアイランド上に搭載した半導体チツプと、
前記半導体チツプの電極と前記リードフレームの
リードの内側先端部との間を電気的に接続するボ
ンデイング線と、前記アイランド及び前記リード
の内側の先端部を含んで封止する第１の樹脂体
と、前記第１の樹脂体表面の前記リードの導出部
の近傍以外の全表面を被覆する金属層と、前記金
属層を含む表面を被覆して封止する第２の樹脂体
とを含んで構成される。
The resin-sealed semiconductor device of the present invention includes a semiconductor chip mounted on an island of a lead frame,
a bonding wire that electrically connects between the electrode of the semiconductor chip and the inner tip of the lead of the lead frame; a first resin body that includes and seals the island and the inner tip of the lead; , a metal layer that covers the entire surface of the first resin body except for the vicinity of the lead-out portion of the lead, and a second resin body that covers and seals the surface including the metal layer. be done.
次に、本発明の実施例について図面を参照して
説明する。
Next, embodiments of the present invention will be described with reference to the drawings.
第１図ａ〜ｃは本発明の一実施例の製造方法を
説明するための工程順に示した半導体装置の断面
図である。 1A to 1C are cross-sectional views of a semiconductor device shown in order of steps for explaining a manufacturing method according to an embodiment of the present invention.
まず、第１図ａに示すように、リードフレーム
のアイランド１の上に半導体チツプ２を搭載し、
半導体チツプ２の電極と前記リードフレームのリ
ード３の内側先端部との間をボンデイング線４で
電気的に接続する。次に、アイランド１及びリー
ド３の内側の先端部を含んでトランスフアモール
ド法により樹脂体５で封止する。 First, as shown in FIG. 1a, a semiconductor chip 2 is mounted on an island 1 of a lead frame,
The electrodes of the semiconductor chip 2 and the inner tips of the leads 3 of the lead frame are electrically connected by bonding wires 4. Next, the island 1 and the inner tip portions of the leads 3 are sealed with a resin body 5 by a transfer molding method.
次に、第１図ｂに示すように、樹脂体５のリー
ド３と導出部近傍及び外部へ導出さたリード３を
樹脂等で作られたマスク６で被覆し、スパツタリ
ング法により樹脂体５の表面に金又はアルミニウ
ム等の金属層を１ｍμ程度の厚さに堆積させ、前
記金属層を電極としてイオンプレーテイング法に
より前記金属層と同じ金属を100ｍμの厚さに堆
積し、金属層７を形成する。 Next, as shown in FIG. 1b, the leads 3 of the resin body 5 and the leads 3 near the lead-out portion and led out to the outside are covered with a mask 6 made of resin or the like, and the resin body 5 is covered with a mask 6 made of resin or the like by sputtering. A metal layer such as gold or aluminum is deposited on the surface to a thickness of about 1 mμ, and the same metal as the metal layer is deposited to a thickness of 100 mμ by ion plating using the metal layer as an electrode to form the metal layer 7. do.
次に、第１図ｃに示すように、マスク６を除
き、トランスフアモールド法により樹脂体８で金
属膜７を被多して封止し、前記リードフレームの
タイバーの切断、リードを整形を行い半導体装置
を完成する。 Next, as shown in FIG. 1c, the mask 6 is removed, the metal film 7 is covered and sealed with a resin body 8 by transfer molding, the tie bars of the lead frame are cut, and the leads are shaped. and completed the semiconductor device.
以上説明したように本発明は、半導体チツプを
搭載してアイランドを第１の樹脂体で封止し、第
１の樹脂体のリード導出部近傍以外の全表面を金
属層で被覆し、更に金属層を含む表面を被覆する
第２の樹脂体で封止することにより、樹脂表面か
らの水の侵入を防ぎ、半導体装置の信頼性を向上
させるという効果を有する。
As explained above, the present invention mounts a semiconductor chip and seals the island with a first resin body, coats the entire surface of the first resin body except the vicinity of the lead lead-out portion with a metal layer, and further coats the first resin body with a metal layer. By sealing the surface including the layer with the second resin body, it is possible to prevent water from entering from the resin surface and improve the reliability of the semiconductor device.
第１図ａ〜ｃは本発明の一実施例の製造方法を
説明するための工程順に示した半導体装置の断面
図、第２図は従来の樹脂封止型半導体装置の一例
を示す断面図である。
１……アイランド、２……半導体チツプ、３…
…リード、４……ボンデイング線、５……樹脂
体、６……マスク、７……金属層、８……樹脂
体。
1A to 1C are cross-sectional views of a semiconductor device shown in the order of steps for explaining a manufacturing method according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing an example of a conventional resin-sealed semiconductor device. be. 1...Island, 2...Semiconductor chip, 3...
...Lead, 4...Bonding wire, 5...Resin body, 6...Mask, 7...Metal layer, 8...Resin body.
Claims (1)
導体チツプと、前記半導体チツプの電極と前記リ
ードフレームのリードの内側先端部との間を電気
的に接続するボンデイング線と、前記アイランド
及び前記リードの内側に先端部を含んで封止する
第１の樹脂体と、前記第１の樹脂体表面の前記リ
ードの導出部の近傍以外の全表面を被覆する金属
層と、前記金属層を含む表面を被覆して封止する
第２の樹脂体とを含むことを特徴とする樹脂封止
型半導体装置。1 A semiconductor chip mounted on an island of a lead frame, a bonding wire that electrically connects between an electrode of the semiconductor chip and the inner tip of the lead of the lead frame, and a bonding wire that connects the tip of the semiconductor chip to the inside of the island and the lead. a first resin body that seals the first resin body, a metal layer that covers the entire surface of the first resin body other than the vicinity of the lead-out portion of the lead, and a metal layer that covers the surface including the metal layer; A resin-sealed semiconductor device comprising: a second resin body for sealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19283287A JPS6437043A (en) | 1987-07-31 | 1987-07-31 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19283287A JPS6437043A (en) | 1987-07-31 | 1987-07-31 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6437043A JPS6437043A (en) | 1989-02-07 |
| JPH0567069B2 true JPH0567069B2 (en) | 1993-09-24 |
Family
ID=16297720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19283287A Granted JPS6437043A (en) | 1987-07-31 | 1987-07-31 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6437043A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5600181A (en) * | 1995-05-24 | 1997-02-04 | Lockheed Martin Corporation | Hermetically sealed high density multi-chip package |
| JP2002058172A (en) | 2000-08-11 | 2002-02-22 | Denso Corp | Voltage controller of vehicle alternator |
| TWI540698B (en) | 2010-08-02 | 2016-07-01 | 日月光半導體製造股份有限公司 | Semiconductor package and manufacturing method thereof |
| JP6345265B2 (en) * | 2014-10-29 | 2018-06-20 | 日立オートモティブシステムズ株式会社 | Electronic device and method for manufacturing electronic device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5972748A (en) * | 1982-10-20 | 1984-04-24 | Nec Kyushu Ltd | Semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5165664U (en) * | 1974-11-15 | 1976-05-24 | ||
| JPS59151446U (en) * | 1983-03-30 | 1984-10-11 | 株式会社東芝 | semiconductor equipment |
-
1987
- 1987-07-31 JP JP19283287A patent/JPS6437043A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5972748A (en) * | 1982-10-20 | 1984-04-24 | Nec Kyushu Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6437043A (en) | 1989-02-07 |
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