JPH0546978B2 - - Google Patents

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Publication number
JPH0546978B2
JPH0546978B2 JP61275912A JP27591286A JPH0546978B2 JP H0546978 B2 JPH0546978 B2 JP H0546978B2 JP 61275912 A JP61275912 A JP 61275912A JP 27591286 A JP27591286 A JP 27591286A JP H0546978 B2 JPH0546978 B2 JP H0546978B2
Authority
JP
Japan
Prior art keywords
aluminum
pad
electrode
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61275912A
Other languages
Japanese (ja)
Other versions
JPS63128634A (en
Inventor
Eiji Hagimoto
Seiichi Nishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP61275912A priority Critical patent/JPS63128634A/en
Publication of JPS63128634A publication Critical patent/JPS63128634A/en
Publication of JPH0546978B2 publication Critical patent/JPH0546978B2/ja
Granted legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To protect the surface of an electrode on a chip perfectly without degrading the reliability of elements nearby by a method wherein hydrate oxide is formed on the surface of the electrode by exposure to vapor after wire bonding. CONSTITUTION:A silicon oxide film 2 is formed on the surface of a silicon substrate 1 and an aluminum pad 3 and an aluminum wiring 4 are formed on it and a surface protective film 5 such as a CVD silicon oxide film or silicon nitride film is formed over the whole surface except on a part of the aluminum pad 3. A fine wire 6 of aluminum, copper or the like is bonded to the aluminum pad 3 by an ultrasonic bonding method or a fine wire 6 of gold is bonded to the aluminum pad 3 by a thermocompression bonding method. After that, if the exposed part of the surface of the pad 3 is exposed to supersaturated vapor, a precise and corrosion-resistant hydrate oxide layer can be obtained. With this constitution, the pad 3 is protected from corrosion caused by moisture penetration from the outside.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造方法、特に半導体基
板上面のアルミニウム電極表面を完全に保護した
構造の半導体装置を製造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device having a structure in which the surface of an aluminum electrode on the upper surface of a semiconductor substrate is completely protected.

〔従来の技術〕[Conventional technology]

一般に半導体チツプの表面はシリコンの酸化膜
や窒化膜等によつて覆われ、外部からの汚れ、水
分の浸入を防いでいる。しかし、半導体チツプを
外部回路と接続するために設けた電極部分（以下
パツド部分と称する。）は電気的導通のため露出
している。通常はアルミニウムで構成されている
前記パツド部分は水分等によつて腐食されること
があり、半導体装置の信頼性上問題となつてい
た。 Generally, the surface of a semiconductor chip is covered with a silicon oxide film, a nitride film, etc. to prevent dirt and moisture from entering from the outside. However, an electrode portion (hereinafter referred to as a pad portion) provided for connecting the semiconductor chip to an external circuit is exposed for electrical continuity. The pad portion, which is usually made of aluminum, is sometimes corroded by moisture or the like, which poses a problem in terms of reliability of the semiconductor device.

〔発明が解決しようとする問題点〕 そこで、耐食性に乏しいパツド部分、例えば、
アルミニウムパツド部分を保護すべく、ワイヤボ
ンデイング後に化成処理によりアルミニウムパツ
ド表面に耐食性の無孔性アルミナを形成する方法
や、CVD法やスパツタリング法等によつて電気
絶縁性の金属酸化膜で覆う方法が知られている。
しかし、化成処理は陽極酸化処理で湿式処理であ
るため半導体装置の諸特性の経時変化を促し、そ
の信頼性を低下させる欠点があつた。また、チツ
プマウント、ボンデイング後に水分にさらす処理
はチツプマウント材や、パツケージ部材からのイ
オン性不純物溶出を促してチツプに好ましくな
い。CVD法やスパツタリング法では処理温度が
高温過ぎて半導体装置の組立に使用する樹脂や低
融点ろう材の融点を越えるので使用できないか、
あるいは半導体装置の諸特性を劣化させてしま
う。[Problems to be solved by the invention] Therefore, pad parts with poor corrosion resistance, for example,
In order to protect the aluminum pad, corrosion-resistant non-porous alumina is formed on the surface of the aluminum pad through chemical conversion treatment after wire bonding, or it is covered with an electrically insulating metal oxide film using CVD, sputtering, etc. method is known.
However, since the chemical conversion treatment is an anodic oxidation treatment and is a wet treatment, it has the drawback of promoting changes in various characteristics of the semiconductor device over time and reducing its reliability. Furthermore, exposure to moisture after chip mounting and bonding is unfavorable for the chip, as it promotes the elution of ionic impurities from the chip mounting material and package members. CVD and sputtering methods cannot be used because the processing temperature is too high and exceeds the melting point of the resin and low melting point brazing filler metal used to assemble semiconductor devices.
Alternatively, various characteristics of the semiconductor device may be deteriorated.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点を解決する為に本発明では、金属細
線によつて結線後に、水蒸気により半導体チツプ
上の電極表面に水和酸化物を形成するのである。 In order to solve the above-mentioned problems, the present invention uses water vapor to form a hydrated oxide on the surface of the electrodes on the semiconductor chip after connecting the thin metal wires.

〔実施例〕〔Example〕

以下本発明を実施例を用いて説明する。 The present invention will be explained below using examples.

第１図は本発明の一実施例である半導体装置の
製造方法を示す断面図である。同図において、素
子の形成を終えたシリコン基板１の表面にシリコ
ン酸化膜２が形成され、この上にアルミニウムパ
ツド３とアルミニウム配線４が形成され、これら
の上にCVDシリコン酸化膜や窒化膜などの表面
保護５がアルミニウムパツド３上の一部を除いて
全面的に形成される。これらは公知の製造方法で
製造することができる。アルミニウムパツド３
に、超音波ボンデイング法ではアルミニウムや銅
など、熱圧着ボンデイング法では金の細線６を固
着する。TAB（Tape，Autmated Bonding）の
場合には、銅のビームリード８を第２図の断面図
に示すように熱圧着する。その後露出したパツド
表面を過飽和蒸気に晒すとちみつで耐食性の水和
酸化物が得られる。アルミニウムの場合には前記
水和酸化物の組成構造は明らかではないが、ベー
マイト被膜と推定される。金属細線としてアルミ
ニウムをもちいればこの細線の表面もアルミナと
なり、耐湿性とさらに向上する。蒸気は純水を
100℃以上に加熱したものを用いれば効果はある
が一定の厚みの水和酸化物を得るには時間がかか
る。過飽和蒸気のほうが短時間で所定の被膜厚み
を得ることができる。蒸気発生装置は公知のボイ
ラー等でよく、蒸気中に不純物、特にイオン性の
不純物を含まないようにステンレス材料を使用す
るなど使用材料に留意する。生成する被膜の速度
や無孔性に強く影響を与えるからである。水蒸気
は吹きつけてもよく、蒸気吹きつけによりチツプ
表面の異物、焼きついた汚れ等が除去されるの
で、耐湿性のみならず信頼性に好影響を与える。
蒸気雰囲気にさらす際、シリコン基板側は蒸気が
結露して半導体チツプに水分が作用することのな
いように100℃以上の温度に維持しておく。組立
に使用している材料、例えば、樹脂材料は耐熱温
度が低いのでモールド製品に適用する場合にはリ
ードフレームのまま加熱テーブル上をすべらして
搬送できるので従来の製造工程に蒸気処理工程を
付加するだけでよい。高温水でも耐食効果を期待
できるが、高温水は常温の水に比較して活性度が
高く温水中に組立後、特にボンテイング後の半製
品を漬けるのはチツプマウント材や、パツケージ
部材からのイオン性不純物溶出を促してチツプに
好ましくないばかりか、樹脂材料は膨潤して強度
劣化や特性変動を生じる欠点がある。 FIG. 1 is a sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention. In the figure, a silicon oxide film 2 is formed on the surface of a silicon substrate 1 on which elements have been formed, an aluminum pad 3 and an aluminum wiring 4 are formed on this, and a CVD silicon oxide film or a nitride film is formed on these. A surface protection 5 such as the above is formed on the entire surface of the aluminum pad 3 except for a part thereof. These can be manufactured by known manufacturing methods. aluminum pad 3
In addition, thin wires 6 of aluminum, copper, etc. are fixed using the ultrasonic bonding method, and gold wires are fixed using the thermocompression bonding method. In the case of TAB (Tape, Automated Bonding), a copper beam lead 8 is thermocompression bonded as shown in the cross-sectional view of FIG. The exposed pad surface is then exposed to supersaturated steam, resulting in a honey, corrosion-resistant hydrated oxide. In the case of aluminum, the compositional structure of the hydrated oxide is not clear, but it is presumed to be a boehmite film. If aluminum is used as the thin metal wire, the surface of this thin wire will also become alumina, further improving its moisture resistance. Steam uses pure water
It is effective to use a material heated to 100°C or higher, but it takes time to obtain a hydrated oxide of a certain thickness. Supersaturated steam can provide a predetermined coating thickness in a shorter time. The steam generator may be a known boiler or the like, and care must be taken to select materials such as stainless steel so that the steam does not contain impurities, especially ionic impurities. This is because it strongly influences the speed and non-porosity of the film formed. Water vapor may be sprayed, and since foreign matter, baked-on dirt, etc. on the surface of the chip are removed by spraying steam, it has a positive effect not only on moisture resistance but also on reliability.
When exposed to a steam atmosphere, the silicon substrate side is maintained at a temperature of 100°C or higher to prevent moisture from acting on the semiconductor chip due to condensation from the steam. Materials used in assembly, such as resin materials, have low heat resistance, so when applied to molded products, the lead frame can be transported by sliding on a heating table, so a steam treatment process is added to the conventional manufacturing process. Just do it. Corrosion resistance can be expected even with high-temperature water, but high-temperature water has higher activity than room-temperature water, so soaking semi-finished products after assembly, especially after bonding, in hot water can reduce ions from chip mount materials and package components. Not only does this promote the elution of sexual impurities, which is undesirable for the chip, but the resin material also swells, resulting in deterioration in strength and variation in properties.

本実施例では、４メグオームの純水を使用し、
150℃〜170℃で数分間の処理で数100オングスト
ロームの耐湿性の被膜を得た。 In this example, 4 megohm pure water is used,
A moisture-resistant film of several 100 angstroms was obtained by treatment at 150°C to 170°C for several minutes.

本発明の次の実施例は水蒸気雰囲気に化成化を
促進する薬品を添加した雰囲気としたなかでボン
デイング後の半製品をさらす方法である。化成化
促進剤として弱アルカリ性の薬品があげられる。
例えば、アンモニア、アミン、アルコールアミン
等である。これらの薬品を水蒸気雰囲気に〜１％
含ませると被膜の生成速度が早く、化成化促進剤
を使用した場合にはそうでない場合に比較して数
倍となる。しかし、同時に多孔質化も促進するの
で耐食性を劣化させないよう条件を設定しなけれ
ばならないのは当然である。 The next embodiment of the present invention is a method in which a semi-finished product after bonding is exposed to a water vapor atmosphere to which a chemical that promotes chemical conversion is added. Weakly alkaline chemicals can be cited as chemical conversion accelerators.
For example, ammonia, amines, alcohol amines, etc. ~1% of these chemicals in a steam atmosphere
When it is included, the film formation rate is fast, and when a chemical conversion accelerator is used, it is several times faster than when it is not used. However, since it also promotes porosity, it is natural that conditions must be set so as not to deteriorate corrosion resistance.

〔発明の効果〕〔Effect of the invention〕

耐食性のアルミナによつて保護されたアルミニ
ウムパツド３は外部からの水分の浸入によつて腐
食することもなく、あるいはパツド間にリーク電
流が流れてその近傍の素子の信頼性を劣化させる
ことなく、この領域でのエレクトロマイグレーシ
ヨンの発生が皆無になる。 The aluminum pad 3 protected by corrosion-resistant alumina does not corrode due to moisture intrusion from the outside, or leakage current flows between the pads and deteriorates the reliability of nearby elements. , the occurrence of electromigration in this region is completely eliminated.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、本発明の半導体装置の製造方法によ
る半導体装置の断面図である。第２図は本発明の
半導体装置の製造方法による他の半導体装置の断
面図である。 １……シリコン基板、２……シリコン酸化膜、
３……アルミニウムパツド、４……アルミニウム
配線、５……表面保護膜、６……金属細線、７…
…耐食性のアルミナ、８……ビームリード。 FIG. 1 is a cross-sectional view of a semiconductor device manufactured by the method of manufacturing a semiconductor device of the present invention. FIG. 2 is a sectional view of another semiconductor device manufactured by the method of manufacturing a semiconductor device of the present invention. 1...Silicon substrate, 2...Silicon oxide film,
3... Aluminum pad, 4... Aluminum wiring, 5... Surface protective film, 6... Fine metal wire, 7...
...Corrosion-resistant alumina, 8...Beam lead.

Claims (1)

【特許請求の範囲】 １ 半導体チツプ上の電極に金属細線を接続した
後、前記電極の表面を水和酸化物生成促進剤を添
加した過飽和水蒸気を含む雰囲気に晒す工程を有
することを特徴とする半導体装置の製造方法。 ２ 前記水和酸化物生成促進剤は、アンモニア、
アミン、アルコールアミンのなかから選ばれたも
のであることを特徴とする特許請求の範囲第１項
に記載の半導体装置の製造方法。[Claims] 1. A method comprising the step of connecting a thin metal wire to an electrode on a semiconductor chip and then exposing the surface of the electrode to an atmosphere containing supersaturated steam to which a hydrated oxide production promoter is added. A method for manufacturing a semiconductor device. 2 The hydrated oxide production promoter includes ammonia,
2. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is selected from amines and alcohol amines.
JP61275912A 1986-11-18 1986-11-18 Manufacture of semiconductor device Granted JPS63128634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61275912A JPS63128634A (en) 1986-11-18 1986-11-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61275912A JPS63128634A (en) 1986-11-18 1986-11-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS63128634A JPS63128634A (en) 1988-06-01
JPH0546978B2 true JPH0546978B2 (en) 1993-07-15

Family

ID=17562157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61275912A Granted JPS63128634A (en) 1986-11-18 1986-11-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS63128634A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW426980B (en) * 1999-01-23 2001-03-21 Lucent Technologies Inc Wire bonding to copper
EP2444999A4 (en) 2009-06-18 2012-11-14 Rohm Co Ltd Semiconductor device
US20120032354A1 (en) * 2010-08-06 2012-02-09 National Semiconductor Corporation Wirebonding method and device enabling high-speed reverse wedge bonding of wire bonds
JP6579653B2 (en) * 2015-06-24 2019-09-25 ローム株式会社 Semiconductor device and manufacturing method of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116634A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor device
JPS56162844A (en) * 1980-05-19 1981-12-15 Hitachi Ltd Semiconductor device and manufacture thereof
JPS59150460A (en) * 1983-01-31 1984-08-28 Toshiba Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116634A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor device
JPS56162844A (en) * 1980-05-19 1981-12-15 Hitachi Ltd Semiconductor device and manufacture thereof
JPS59150460A (en) * 1983-01-31 1984-08-28 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS63128634A (en) 1988-06-01

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