JPS59139661A - Semiconductor device - Google Patents

Semiconductor device

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Publication number
JPS59139661A
JPS59139661A JP58012720A JP1272083A JPS59139661A JP S59139661 A JPS59139661 A JP S59139661A JP 58012720 A JP58012720 A JP 58012720A JP 1272083 A JP1272083 A JP 1272083A JP S59139661 A JPS59139661 A JP S59139661A
Authority
JP
Japan
Prior art keywords
wire
alloy
semiconductor device
resin
thermo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58012720A
Other languages
Japanese (ja)
Inventor
Tokio Kato
加藤　登季男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58012720A priority Critical patent/JPS59139661A/en
Publication of JPS59139661A publication Critical patent/JPS59139661A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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Abstract

PURPOSE:To improve the dampproof property of a wire by a method wherein, as an adding alloy, Al containing one or two kinds or more of elements selected from transition metal elements is used as a wire material. CONSTITUTION:A wire 4 is bonded on a Al bonding pad 9 by performing a thermo-press welding. A wire material consists of an Al alloy containing 1% of Si or 2% of Ni, for example, a wire formed into fine wire having the diameter of 25-40mum is used, and a thermo-press welding binding is performed utilizing an arc discharge and the like. As an Al alloy, material containing one or two kinds or more of Ti, Pb, Pt, Cr and the like can be used, and in that case, the element content of the alloy is to be within 0.05-10wt%. In the case where Al alone is used, the corrosion of grain boundary at high temperature and in high humidity can be suppressed by forming Al into an alloy, thereby enabling to prevent the breaking of wire.

Description

【発明の詳細な説明】 本発明は半導体装置におけるワイヤポンディング部のワ
イヤ構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire structure of a wire bonding portion in a semiconductor device.

樹脂モールド体により封止された半導体装置においては
、樹脂に一部封止される外部リードへの接続のため半導
体基体上の電極（パッド）にポンディング材としてＡｕ
（金）ワイヤが従来より用いられている。このＡｕワイ
ヤは価格的に高いためこれをＡ−ｅ（アルミニウム）ワ
イヤに置き換える試みがなされている。Ａノで第１に問
題になることは、ポンディングが難しいことである。し
かし、これはＮ１等の不活性雰囲気中のアーク放電を利
用することで解決された。Ａ７で次に問題となることは
耐湿性に弱いことである。ＡＪ３ワイヤの周囲は樹脂モ
ールド体で囲まれているが、樹脂自体に含まれる水分や
、リードを通じて樹脂との隙間から侵入する水分により
Ａノが腐食され断線事故につながる恐れがあった。In a semiconductor device sealed with a resin mold body, Au is used as a bonding material on the electrode (pad) on the semiconductor substrate for connection to an external lead that is partially sealed in the resin.
(gold) wire has traditionally been used. Since this Au wire is expensive, attempts have been made to replace it with A-e (aluminum) wire. The first problem with A-no is that pounding is difficult. However, this was solved by using arc discharge in an inert atmosphere such as N1. The next problem with A7 is that it has poor moisture resistance. Although the AJ3 wire is surrounded by a resin mold, there is a risk that the AJ3 wire will be corroded by moisture contained in the resin itself or moisture that enters through the gap between the lead and the resin, leading to a disconnection accident.

本発明は上記した問題を解決するためになされたもので
あり、その目的は樹脂封止型半導体装置におけるワイヤ
の耐湿性の向上であり、その結果としての半導体製品の
信頼性の向上にある。The present invention has been made to solve the above problems, and its purpose is to improve the moisture resistance of wires in resin-sealed semiconductor devices, and as a result, to improve the reliability of semiconductor products.

上記目的を達成するための本発明の主旨は、樹脂封止半
導体装置におけるワイヤ材として耐湿性にすぐれたＡｆ
ｆ１合金を用いることであり、例えばＳｉ又はＴｉ、Ｎ
ｉ、Ｐｄ、Ｐｔ、Ｃｒ等の遷移金属元素のうちから選ば
れた１種又は２種以上の元素を添加合金として含有する
Ａ１合金を用いることである。ここでＡ−ｅ等の金属に
浸水した場合の金属粒界腐食のメカニズムについて若干
述べてみる。The gist of the present invention for achieving the above object is to use Af, which has excellent moisture resistance, as a wire material in resin-sealed semiconductor devices.
f1 alloy, for example Si or Ti, N
The purpose is to use an A1 alloy containing one or more elements selected from transition metal elements such as i, Pd, Pt, and Cr as an additive alloy. Here, we will briefly discuss the mechanism of metal intergranular corrosion when metals such as A-e are immersed in water.

一般にＡ影等により水素（Ｈ７）が発生する場合にある
電圧水準以上でおこるーすなわち、第３図の反応速度−
電圧曲線Ａで示すように水素過電圧■３だけ余分の電圧
がかかる。これはＡ２に水が反応して生じた水素イオン
が気化したＨｌになって粒界にそってｉ中に入り、これ
が体積膨張して粒界をおしひろげてさらに水が入るいわ
ゆる”水素脆性”をおこす。Generally, when hydrogen (H7) is generated due to A shadow, etc., it occurs above a certain voltage level - that is, the reaction rate shown in Figure 3 -
As shown in voltage curve A, an extra voltage of hydrogen overvoltage 3 is applied. This is due to the so-called "hydrogen embrittlement" in which hydrogen ions generated by the reaction of water with A2 become vaporized Hl and enter I along the grain boundaries, which expands in volume and spreads across the grain boundaries, allowing more water to enter. ”

Ａ！にＳｉや遷移金属元素を添加した場合、第３図の曲
線Ｂで示すように水素過電圧が小さくてすむことから、
反応がＡ−ｅの表面近傍で容易におこり、粒界腐食は起
りにくい一本発明にこのような現象を解明することによ
ってなされた。A! When Si or transition metal elements are added to the hydrogen overvoltage, the hydrogen overvoltage is small, as shown by curve B in Figure 3.
The reaction easily occurs near the surface of A-e, and intergranular corrosion is less likely to occur.The present invention was made by elucidating this phenomenon.

以下実施例にそって本発明を詳述する。The present invention will be described in detail below with reference to Examples.

第１図は樹脂封止形半導体装置の模型的断面構造を示す
。同図において、１は半導体素子（ペレット）、２は金
属タブ、３は外部リード、４は素子の電極と外部リード
との間を接続するワイヤ。FIG. 1 shows a schematic cross-sectional structure of a resin-sealed semiconductor device. In the figure, 1 is a semiconductor element (pellet), 2 is a metal tab, 3 is an external lead, and 4 is a wire connecting between the electrode of the element and the external lead.

５は樹脂モールド体である。第２図は第１図の一部（Ａ
）を拡大した断面図である。同図において、６はＳｉ基
体、７，８は絶縁膜〜９はＡＡ配線端子を絶縁膜７上に
延在させたＡ−ｅのボンディングパ、ｙド（厚さ１〜２
μｍ）である。この人２のボンディングバノドの上にワ
イヤ４が熱圧着ボンディングされる。5 is a resin mold body. Figure 2 is a part of Figure 1 (A
) is an enlarged cross-sectional view. In the figure, 6 is a Si substrate, 7 and 8 are insulating films, and 9 is an A-e bonding pad with an AA wiring terminal extending on the insulating film 7.
μm). A wire 4 is thermocompression bonded onto the bonding plate of this person 2.

上記のワイヤ材として例えばＳｉを１％又はＮｉを２％
含有するＡ２合金から成り、径２５〜４０μｍの＃ＩＩ
Ｉａｌとしたワイヤを用い、アーク放電等を利用して熱
圧着ホンディングを行なったものである。なお、Ａ１合
金としてはこれ以外にＴｉ、Ｐｂ。As the above wire material, for example, 1% Si or 2% Ni
Made of A2 alloy containing #II with a diameter of 25 to 40 μm
Thermocompression bonding was carried out using arc discharge or the like using a wire of Ial. In addition, Ti and Pb are also used as the A1 alloy.

Ｐｔ、Ｃｒ等の遷移金属元素を用いることかできる。Transition metal elements such as Pt and Cr can be used.

又、Ｓｉ、Ｎｉを含めてこれら元素を１種又は２種以上
併用してＡｌ中に含有させ、その場合合金の元素含有量
は０．０５〜１０重景％以内とする。Furthermore, one or more of these elements, including Si and Ni, are contained in Al, and in this case, the element content of the alloy is within 0.05 to 10% by weight.

このようなＡ１合金ワイヤを用いた樹脂封止半導体装置
においてＰＣＴ（１２５°で２気圧のＨ，０ガス中で行
なう長時間テスト）を行なった一部の結果は下表の通り
である。Some of the results of PCT (long-term test conducted at 125° in H, 0 gas at 2 atmospheres) conducted on a resin-sealed semiconductor device using such A1 alloy wire are shown in the table below.

表 以上実施例で述べた本発明によれば、Ａノ単独の場合の
高温高湿での粒界腐食をＡＡを合金化することにより押
えることができ、ワイヤの断線を防止することができ、
結果として半導体製品の信頼性を向上すること−になっ
た。According to the present invention described in the examples above, grain boundary corrosion at high temperature and high humidity when A alone is used can be suppressed by alloying AA, and wire breakage can be prevented.
As a result, the reliability of semiconductor products has been improved.

本発明は樹脂モールド体により封止され、樹脂中にワイ
ヤが存在する製品の全て、特に樹脂封止トランジスタ、
ＩＣに適用して有効である。The present invention applies to all products that are sealed with a resin molded body and have wires in the resin, especially resin-sealed transistors,
It is effective when applied to IC.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は樹脂封止半導体装置の一例を示す縦断面図であ
る。 第２図は第１図における一部（Ａ）拡大断面図である。 第３図は反応速度と水素過電圧の関係を示す曲線図であ
る。 １・・・半導体素子、２・・・金属タブ、３・・・リー
ド。 ４・・・ワイヤ、５・・・樹脂モールド体。 第　　１　　図 ２ 第　　２　　図 第　　３　　図FIG. 1 is a longitudinal sectional view showing an example of a resin-sealed semiconductor device. FIG. 2 is an enlarged sectional view of a portion (A) of FIG. 1. FIG. 3 is a curve diagram showing the relationship between reaction rate and hydrogen overvoltage. 1... Semiconductor element, 2... Metal tab, 3... Lead. 4...Wire, 5...Resin mold body. Figure 1 Figure 2 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】 １、半導体基体上の電極にワイヤーがポンディングされ
て成る半導体装置において、上記ワイヤ材として、Ｓｉ
又はＴｉ、Ｎｉ、Ｐｄ、Ｐｔ、Ｃｒ等の遷移金属元素の
うちから選ばれた１種又は２ｍ以上の元素を添加合金と
して含有するＡ！を用いたことを特徴とする半導体装置
。 ２、Ａ２に含ませる上記元素の含有量は０．０５〜ノ １０重量％以内である特許請求の範囲第１項に記載の半
導体装置。 ３、上記半導体装置は樹脂モールド体により封止された
ものである特許請求の範囲第１項又は第２項に記載の半
導体装置。[Claims] 1. In a semiconductor device in which a wire is bonded to an electrode on a semiconductor substrate, the wire material is Si.
Or A! containing one or more elements selected from transition metal elements such as Ti, Ni, Pd, Pt, and Cr as an additive alloy! A semiconductor device characterized by using. 2. The semiconductor device according to claim 1, wherein the content of the element contained in A2 is within 0.05 to 10% by weight. 3. The semiconductor device according to claim 1 or 2, wherein the semiconductor device is sealed with a resin molded body.
JP58012720A 1983-01-31 1983-01-31 Semiconductor device Pending JPS59139661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58012720A JPS59139661A (en) 1983-01-31 1983-01-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58012720A JPS59139661A (en) 1983-01-31 1983-01-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS59139661A true JPS59139661A (en) 1984-08-10

Family

ID=11813260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58012720A Pending JPS59139661A (en) 1983-01-31 1983-01-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS59139661A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070750A (en) * 1983-09-28 1985-04-22 Hitachi Ltd Semiconductor device
JPS6095948A (en) * 1983-10-31 1985-05-29 Tanaka Denshi Kogyo Kk Al wire for bonding semiconductor element
JPH04184945A (en) * 1990-11-20 1992-07-01 Hitachi Chem Co Ltd Semiconductor device
WO1998032168A1 (en) * 1997-01-16 1998-07-23 Ford Motor Company Method for doping metallic connecting wire

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070750A (en) * 1983-09-28 1985-04-22 Hitachi Ltd Semiconductor device
JPH0446452B2 (en) * 1983-09-28 1992-07-30 Hitachi Ltd
JPS6095948A (en) * 1983-10-31 1985-05-29 Tanaka Denshi Kogyo Kk Al wire for bonding semiconductor element
JPH0454383B2 (en) * 1983-10-31 1992-08-31 Tanaka Electronics Ind
JPH04184945A (en) * 1990-11-20 1992-07-01 Hitachi Chem Co Ltd Semiconductor device
WO1998032168A1 (en) * 1997-01-16 1998-07-23 Ford Motor Company Method for doping metallic connecting wire

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