JPS5821380A - Manufacture of semiconductor pressure transducer - Google Patents
Manufacture of semiconductor pressure transducerInfo
- Publication number
- JPS5821380A JPS5821380A JP11772081A JP11772081A JPS5821380A JP S5821380 A JPS5821380 A JP S5821380A JP 11772081 A JP11772081 A JP 11772081A JP 11772081 A JP11772081 A JP 11772081A JP S5821380 A JPS5821380 A JP S5821380A
- Authority
- JP
- Japan
- Prior art keywords
- base
- semiconductor wafer
- sections
- fixed
- sensitive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000002411 adverse Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 25
- 238000009423 ventilation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 210000003899 penis Anatomy 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Abstract
Description
【発明の詳細な説明】 本発明は半導体圧力変換器の製造方法に関する。[Detailed description of the invention] The present invention relates to a method of manufacturing a semiconductor pressure transducer.
たとえば自動車等に用いられる圧力変換器は、第１図に
示すように構成されている。同図において、外囲器１が
あり、この外囲器１はケース部、ＩＡと蓋ＩＢとからな
っている。前記ケース部１人には外気と通ずる通気孔２
が設けられ、この通気孔２上のケース部ＩＡ内はケーシ
ング３が固定配置されている。前記ケーシング３は前記
通気孔２と同軸に外気導入孔４が設けられ、この外気導
入孔４上のケーシング３内にはたとえばガラスからなる
ベース５が固定配置されている。このベース５は、前記
外気導入孔４と同軸に貫通孔５人が形成され、この貫通
孔５Ａを股がってペース５上には感圧素子６が固定配置
されている。For example, a pressure transducer used in an automobile or the like is constructed as shown in FIG. In the figure, there is an envelope 1, which consists of a case portion IA and a lid IB. One person in the case part has two ventilation holes that communicate with the outside air.
is provided, and a casing 3 is fixedly disposed inside the case portion IA above the ventilation hole 2. The casing 3 is provided with an outside air introduction hole 4 coaxially with the ventilation hole 2, and a base 5 made of glass, for example, is fixedly arranged inside the casing 3 above the outside air introduction hole 4. This base 5 has five through holes formed coaxially with the outside air introduction hole 4, and a pressure sensing element 6 is fixedly arranged on the pace 5 across the through holes 5A.
感圧素子６は半導体基板面にたとえば拡散によりゲージ
抵抗が形成されたものからなり、前記ベース５の貫通孔
５Ａと対向する部分は薄く形成されてダイヤスラムの機
能を有している。感圧素子６における外部端子はワイヤ
７を介してケーシング３に固定されたり−ド８に接続さ
れ、また前記リード８はケース部ＩＡ内に固定配置され
た増幅回路９を介してケース部ＩＡに取付けられた外部
端子１０によって電気的に引き出されている。The pressure sensitive element 6 is made of a gauge resistor formed on the surface of a semiconductor substrate by, for example, diffusion, and the portion of the base 5 facing the through hole 5A is formed thin and has a diamond slam function. The external terminal of the pressure sensitive element 6 is fixed to the casing 3 via a wire 7 or connected to a lead 8, and the lead 8 is connected to the case IA via an amplifier circuit 9 fixedly disposed within the case IA. It is electrically drawn out by an attached external terminal 10.
なおケース部ＩＡ内には、前記増幅回路９等を被ってシ
リコンゲル１１が注入されて耐湿性を向上させている。Note that silicon gel 11 is injected into the case portion IA to cover the amplifier circuit 9 and the like to improve moisture resistance.
ところで、このような圧力変換器において、ベースとこ
れに固着される感圧素子６とは一体造して形成するのが
一般的であり、従来、ダイシングする前の比較的大きな
面積を有するベース板体と半導体ウェーハとを固着した
後に、半導体ウェーハ面の各感圧素子６をベース５ごと
ダイシングしていた。しかしながら、従来のこのような
方法において、前記感圧素子６は、半導体基板の裏面中
央にたとえばエツチング等により凹陥部を形成して〜ダ
イヤフラム部とそれ以外の比較的面積の大きな支持部が
形成された構成とし、かつベース５は貫通孔５Ａのみが
形成された平板材としたものであることから、ベース５
と半導体ウェーハとの固着においては各感圧素子６の支
持部全域になされるようになる。By the way, in such a pressure transducer, the base and the pressure sensitive element 6 fixed to the base are generally formed integrally, and conventionally, a base plate having a relatively large area before dicing is used. After fixing the body and the semiconductor wafer, each pressure sensitive element 6 on the surface of the semiconductor wafer was diced together with the base 5. However, in such a conventional method, the pressure-sensitive element 6 is formed by forming a concave part by etching or the like in the center of the back surface of the semiconductor substrate, and then forming a diaphragm part and a supporting part having a relatively large area other than that part. Since the base 5 is a flat plate material in which only the through hole 5A is formed, the base 5
When fixing the pressure-sensitive elements 6 to the semiconductor wafer, the entire support portion of each pressure-sensitive element 6 is fixed.
したがって、ベース５に対する半導体ウェーハの固着の
際に、前記半導体ウェーハに若干の反９等が生じた場合
、感圧素子６の支持部がペニス５上の所定個所からずれ
て固着されたりし、Ｃの結果、応力集中が発生し固着が
充析になされないとともに応力歪みがダイヤフラム部に
至り特性上悪影響を及ぼすという欠点がめった。Therefore, when the semiconductor wafer is fixed to the base 5, if the semiconductor wafer is slightly bent, the support part of the pressure sensitive element 6 may be deviated from a predetermined position on the penis 5 and may be fixed. As a result, stress concentration occurs and fixation is not achieved through filling, and stress strain reaches the diaphragm portion, which has an adverse effect on the characteristics.
本発明の目的は、ベースに対する感圧素子の固着を良好
にし、かつその固着面において応力の集中発生を防止す
るようにした半導体圧力変換器の製造方法を提供するこ
とにおる。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor pressure transducer that improves the adhesion of a pressure-sensitive element to a base and prevents the concentration of stress on the adhesion surface.
このような目的を達成するために、本発明は、裏面中央
部に凹陥部が形成され、これにより形成されるダイヤフ
ラムの主表面にゲージ抵抗を有する感圧素子を複数個形
成した半導体ウェーハと、前記各感圧素子に固着される
個々のベースを一体化したベース板体とを固着し、前記
半導体ウェーハの各感圧素子をベースごとにダイシング
する半導体変換器の製造方法において、前記半導体ウェ
ーハと前記ベース板体との少なくともいずれか一方の固
着面にダイ、′ｌ／ｌダンインに沿った溝を形成してお
くことを特徴とするものである。In order to achieve such an object, the present invention provides a semiconductor wafer in which a concave portion is formed in the center of the back surface, and a plurality of pressure sensitive elements having a gauge resistance are formed on the main surface of a diaphragm formed thereby; In the method for manufacturing a semiconductor converter, the semiconductor wafer and the semiconductor converter are bonded together with a base plate body which is an integral part of the individual bases fixed to each of the pressure-sensitive elements, and each pressure-sensitive element of the semiconductor wafer is diced for each base. The present invention is characterized in that a groove along the die and 'l/l dunn-in is formed in at least one of the fixing surfaces to the base plate.
以下、実施例を用いて本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail using Examples.
第２図は本発明による半導体圧力変換器の製造方法の一
実施例を示す断面図である。ベース板体５があシ、この
ベース板体５は一板の板材からなり後工程のダイシング
で分離されるべき各ベースの中央にそれぞれ貫通孔５Ａ
が設けられているとともに１ダイシングラインに沿って
溝５Ｂが形成されている。FIG. 2 is a sectional view showing an embodiment of the method for manufacturing a semiconductor pressure transducer according to the present invention. The base plate body 5 is made of a single plate and has a through hole 5A in the center of each base to be separated in the subsequent dicing process.
A groove 5B is formed along one dicing line.
そして１このように構成されているベース板体５の上面
には半導体ウェーハが固着されるようになっている。前
記半導体ウェーハは複数の感圧素子６が一体に形成され
ているものであり、各感圧素子６は、前記ベース５との
対向面にてたとえばエツチングで凹陥部が形成されるこ
とによシダイヤフラム部６Ａとそれ以外の領域にて支持
部６Ｂとを有する。なお、前記半導体ウェーハはその各
凹陥部がベース５の各貫通孔５Ａと対向するように配置
される。1. A semiconductor wafer is fixed to the upper surface of the base plate 5 constructed in this way. The semiconductor wafer is one in which a plurality of pressure sensitive elements 6 are integrally formed, and each pressure sensitive element 6 is etched by forming a recessed portion on the surface facing the base 5, for example. It has a diaphragm portion 6A and a support portion 6B in the other area. Note that the semiconductor wafer is arranged such that each of its recesses faces each of the through holes 5A of the base 5.
前記ダイヤフラム部６Ａの表面には半導体ウェーハと異
なる導電型の拡散層の形成により得られるゲージ抵抗１
２、このゲージ抵抗１２に接続された引き出し電極１３
が配置されている。A gauge resistor 1 obtained by forming a diffusion layer of a conductivity type different from that of the semiconductor wafer is formed on the surface of the diaphragm portion 6A.
2. Extracting electrode 13 connected to this gauge resistor 12
is located.
そして、このようにして得られるベース板体５と半導体
ウエーノ・との一体楕成物は、たとえばブレードによっ
て、図中Ｄ−Ｄ線すなわちダイシングラインに沿ってダ
イシングされ、第３図に示すように、ベース５が固着さ
れた個々の感圧素子６に分離される。The integral ellipse of the base plate 5 and the semiconductor wafer thus obtained is then diced, for example, with a blade along line D-D in the figure, that is, along the dicing line, as shown in FIG. , into individual pressure sensitive elements 6 to which a base 5 is fixed.
このようにすれば、ダイシングラインに沿って溝が形成
されたベース５に半導体ウエーノ・を固着する場合、実
際、ベース５との固着部である支持部５Ｂは前記溝５Ａ
の占有面積分だけベース５との固着に関与しなくなる。In this way, when the semiconductor wafer is fixed to the base 5 in which a groove is formed along the dicing line, the supporting part 5B, which is the part fixed to the base 5, is actually connected to the groove 5A.
It is no longer involved in fixing to the base 5 by the occupied area.
このため、ベース５に対する半導体ウエーノ・９固着の
際に前記半導体ウェーハに若干の反シ等が生じた場付、
感圧素子６の支持部がベース５上の所定個所からずれて
固着されたりし、この結果応力集中が発生しても、この
応力集中は前記溝５Ａの個所すなわちベース５との非固
着部に吸収されるようになる。Therefore, in the event that the semiconductor wafer 9 is slightly warped when the semiconductor wafer 9 is fixed to the base 5,
Even if the support portion of the pressure-sensitive element 6 is fixed to the base 5 in a manner that is shifted from a predetermined location on the base 5, and stress concentration occurs as a result, this stress concentration will be applied to the groove 5A, that is, the portion that is not fixed to the base 5. Becomes absorbed.
したがって、ベース５に対する半導体ウェーＩ・の固着
が充分になされ、かつダイヤフラム部６Ａに至る応力歪
みがなくなることから感圧素子６の特性に悪影響を及ば
ずことはなくなる。Therefore, the semiconductor wafer I. is sufficiently fixed to the base 5, and the stress strain reaching the diaphragm portion 6A is eliminated, so that the characteristics of the pressure sensitive element 6 are not adversely affected.
また、ベース５に形成する溝の深さを深く形成しておけ
ば、第２図中Ｄ−Ｄ線に沿ってダイシングをする場合、
そのダイシングは実質上半導体ウェーハトツース５のご
く一部であることから、その作業が極めて容易となる。In addition, if the depth of the groove formed in the base 5 is deep, when dicing is performed along the line D-D in FIG.
Since the dicing is substantially a small part of the semiconductor wafer tooth 5, the work is extremely easy.
従来においては半導体ウェーハとベース５とを一度にダ
イシングしなければならず、その作業が困難であるとと
もに、半導体ウェーハとベースとのそれぞれの硬度の差
からダイシングするためのブレードをダイシング工程中
にて半導体ウェーハ用およびベース用と使い分けて使用
しなければならない欠点があった。Conventionally, the semiconductor wafer and the base 5 had to be diced at the same time, which was difficult, and due to the difference in hardness between the semiconductor wafer and the base, it was necessary to use a dicing blade during the dicing process. It had the disadvantage that it had to be used separately for semiconductor wafers and bases.
なお、ベース５に形成する溝５Ｂはベース５に至るよう
にし、かつこの溝５Ｂによシ分割されるべき各ベース５
を一体保持するように、各ベース５の裏面に接着テープ
等を貼付させておくようにすれば上述した効果はよシ大
とすることができる。Note that the groove 5B formed in the base 5 should reach the base 5, and each base 5 to be divided by this groove 5B
The above-mentioned effect can be further enhanced by pasting an adhesive tape or the like to the back surface of each base 5 so as to hold them together.
さらに、本実施例のようにすれば、予めベース５にダイ
シングを兼ねる溝５Ｂを形成する段階で半導体ウェーハ
は固着されていないことから、溝″５Ｂの形成によって
不良が生じてもベース５のみ □の不良だけで抑
えることができるので歩留りを向上させることができる
。Furthermore, according to this embodiment, since the semiconductor wafer is not fixed at the stage of forming the grooves 5B that also serve as dicing on the base 5 in advance, even if a defect occurs due to the formation of the grooves "5B", only the base 5 will be removed. Since it is possible to suppress only the defects of , the yield can be improved.
本実施例では、ベース５にそのダイシングラインに沿っ
て溝５Ａを形成したものであるが、半導体ウェーハのベ
ース固着面においてダイシングラインに沿った溝を形成
しても本発明の目的を達成できることはいうまでもない
。In this embodiment, the groove 5A is formed in the base 5 along the dicing line, but the object of the present invention can also be achieved even if the groove is formed along the dicing line on the base fixing surface of the semiconductor wafer. Needless to say.
また、第４図に示すように、ベース５および半導体ウェ
ーハのそれぞれの固着面において、ダイシングラインに
沿った溝（半導体ウェーハ側は信号１４で示している）
を形成するようにしてもよいことはいうまでもない。Furthermore, as shown in FIG. 4, grooves are formed along the dicing lines on the fixed surfaces of the base 5 and the semiconductor wafer (the semiconductor wafer side is indicated by a signal 14).
It goes without saying that it is also possible to form a .
以上述べたことから明らかなように、本発明によれば、
ベースに対する感圧累子の固着を良好にし、かつその固
着面において応力の東中元生を防止することができる。As is clear from the above description, according to the present invention,
It is possible to improve the adhesion of the pressure-sensitive resistor to the base, and to prevent stress from occurring on the adhesion surface.
第１図は半導体圧力変換器の構成を示す図、第２図は本
発明による半導体圧力変換器の製造方法の一実施例を示
す断面図、第３図は本発明による半導体圧力変換器の製
造方法の一実施例により得られる半導体圧力変換器を示
す断面図、第４図は本発明による圧力変換器の他の実施
例を示す断面図である。
５・・・ベース、５Ａ・・・貫通孔、５Ｂ・・ｍ、６・
・・感圧筒１０
第２０FIG. 1 is a diagram showing the configuration of a semiconductor pressure transducer, FIG. 2 is a sectional view showing an embodiment of a method for manufacturing a semiconductor pressure transducer according to the present invention, and FIG. 3 is a diagram showing the manufacture of a semiconductor pressure transducer according to the present invention. FIG. 4 is a sectional view showing a semiconductor pressure transducer obtained by one embodiment of the method, and FIG. 4 is a sectional view showing another embodiment of the pressure transducer according to the invention. 5...Base, 5A...Through hole, 5B...m, 6...
...Pressure sensitive tube 10 No. 20
Claims (1)
れるダイヤフラムの主表面にゲージ抵抗を有する感圧素
子を複数個形成した半導体ウェーハと、前記各感圧素子
に固着される個々のベースを一体化したベース板体とを
固着し、前記半導体ウェーハの各感圧素子をベースごと
にダイシングする半導体変換器の製造方法において、前
記半導体ウェーハと前記ベース板体との少なくともいず
れか一方の固層面にダイシングラインに沿った溝を形成
しておくことを特徴とする半導体圧力変換器の製造方法
。1. A semiconductor wafer in which a concave portion is formed in the center of the back surface, and a plurality of pressure sensitive elements having a gauge resistance are formed on the main surface of a diaphragm formed by this, and individual bases fixed to each of the pressure sensitive elements. In the method of manufacturing a semiconductor converter, the semiconductor wafer and the base plate are fixed together, and each pressure-sensitive element of the semiconductor wafer is diced into base plates, the semiconductor wafer and the base plate being fixed together. A method for manufacturing a semiconductor pressure transducer, characterized by forming grooves along dicing lines on a layer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11772081A JPS5821380A (en) | 1981-07-29 | 1981-07-29 | Manufacture of semiconductor pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11772081A JPS5821380A (en) | 1981-07-29 | 1981-07-29 | Manufacture of semiconductor pressure transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5821380A true JPS5821380A (en) | 1983-02-08 |
Family
ID=14718619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11772081A Pending JPS5821380A (en) | 1981-07-29 | 1981-07-29 | Manufacture of semiconductor pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821380A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61267342A (en) * | 1985-05-21 | 1986-11-26 | Fujikura Ltd | Manufacture of semiconductor chip |
| JPS6221277A (en) * | 1985-07-19 | 1987-01-29 | Nec Corp | Electrostatic bonding method |
| JPH07176764A (en) * | 1993-12-20 | 1995-07-14 | Nec Corp | Semiconductor sensor |
-
1981
- 1981-07-29 JP JP11772081A patent/JPS5821380A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61267342A (en) * | 1985-05-21 | 1986-11-26 | Fujikura Ltd | Manufacture of semiconductor chip |
| JPS6221277A (en) * | 1985-07-19 | 1987-01-29 | Nec Corp | Electrostatic bonding method |
| JPH07176764A (en) * | 1993-12-20 | 1995-07-14 | Nec Corp | Semiconductor sensor |
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