JPS6236112Y2 - - Google Patents
Info
- Publication number
- JPS6236112Y2 JPS6236112Y2 JP10840381U JP10840381U JPS6236112Y2 JP S6236112 Y2 JPS6236112 Y2 JP S6236112Y2 JP 10840381 U JP10840381 U JP 10840381U JP 10840381 U JP10840381 U JP 10840381U JP S6236112 Y2 JPS6236112 Y2 JP S6236112Y2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- sensitive chip
- lead piece
- adhesive layer
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 description 7
- 238000000034 method Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
Description
【考案の詳細な説明】
この考案は、血圧計などに使用され、流体圧力
を電気信号に変換する半導体感圧装置に関するも
のである。[Detailed Description of the Invention] This invention relates to a semiconductor pressure-sensitive device that is used in blood pressure monitors and the like and converts fluid pressure into electrical signals.
従来、半導体感圧装置は第１図のように電気絶
縁基台１上に熱歪防止用スペーサ２を介して感圧
チツプ３を弾性接着剤４，５により接着し、上記
感圧チツプ３とリード片６，７とにリード線８，
９をワイヤボンデイングしたのち、基台１の開口
部にキヤツプ１０を接着して構成されている。上
記基台１およびスペーサ２には感圧チツプ３に流
体圧力を導入するための導入孔１１と連通孔１２
が形成されており、この孔１１，１２を通つて流
体圧力が感圧チツプ３に付勢されたとき、その圧
力に応じて変化する電気信号がリード片６，７か
ら取り出される。 Conventionally, in a semiconductor pressure-sensitive device, a pressure-sensitive chip 3 is bonded on an electrically insulating base 1 with an elastic adhesive 4, 5 via a spacer 2 for preventing thermal distortion, as shown in FIG. Lead wire 8 to lead pieces 6, 7,
After wire bonding 9, a cap 10 is bonded to the opening of the base 1. The base 1 and the spacer 2 have an introduction hole 11 and a communication hole 12 for introducing fluid pressure into the pressure-sensitive chip 3.
are formed, and when fluid pressure is applied to the pressure sensitive chip 3 through these holes 11 and 12, an electrical signal that changes in accordance with the pressure is extracted from the lead pieces 6 and 7.
しかし、上記のような構成では基台１とスペー
サ２並びにスペーサ２と感圧チツプ３の各間に弾
性接着剤層４，５を形成しなければねらず、その
接着剤層の形成に２工程を要する。さらに、基台
１とスペーサ２間の接着に際しては、両者の位置
合わせに作業者の十分な注意力を必要とするもの
で、きわめて生産性の悪いものであつた。 However, in the above structure, elastic adhesive layers 4 and 5 must be formed between the base 1 and the spacer 2 and between the spacer 2 and the pressure-sensitive chip 3, and two steps are required to form the adhesive layer. It takes. Furthermore, when adhering the base 1 and the spacer 2, the operator's full attention is required to align the two, resulting in extremely poor productivity.
この考案は上記の欠点を改善するためになされ
たもので、以下、この考案の実施例を図面にした
がつて説明する。 This invention was made to improve the above-mentioned drawbacks, and embodiments of this invention will be described below with reference to the drawings.
第２図はこの考案による半導体感圧装置の一例
を示す断面図で、第１図と同一部分に同一番号が
付されている。 FIG. 2 is a sectional view showing an example of a semiconductor pressure-sensitive device according to this invention, in which the same parts as in FIG. 1 are given the same numbers.
第２図に示すように、１対のリード片６，７の
うち、一方のリード片７が流体圧力の導入孔１１
をまたいで基台１に一体に成形されている。この
リード片７は感圧チツプ３と同じ熱膨張係数を有
するコバール、鉄−ニツケル合金からなり、上記
リード片７上に感圧チツプ３が弾性接着剤層１３
を介して接着されている。 As shown in FIG. 2, one of the pair of lead pieces 6 and 7 is connected to the fluid pressure introduction hole 11.
It is integrally molded with the base 1 across the board. The lead piece 7 is made of Kovar or iron-nickel alloy having the same coefficient of thermal expansion as the pressure-sensitive chip 3, and the pressure-sensitive chip 3 is placed on the elastic adhesive layer 13 on the lead piece 7.
It is glued through.
また、感圧チツプ３の裏面に流体圧力を連通さ
せるため、上記リード片７に連通孔１４が形成さ
れている。 Furthermore, a communication hole 14 is formed in the lead piece 7 in order to communicate fluid pressure to the back surface of the pressure sensitive chip 3.
上記構成から明らかなように、基台１に一体形
成されたリード片７に感圧チツプ３を直接に固定
するようにしたから、従来のように、第１図で示
したスペーサ２を省略することができて部品点数
の減少が図れる。また、スペーサ２を基台１に接
着するための接着工程が省略でき、生産の能率化
を図ることができ、さらに、基台１とスペーサ２
との位置合わせ工程も不要となる。 As is clear from the above structure, since the pressure-sensitive chip 3 is directly fixed to the lead piece 7 integrally formed on the base 1, the spacer 2 shown in FIG. 1 is omitted as in the conventional case. This allows the number of parts to be reduced. In addition, the bonding process for bonding the spacer 2 to the base 1 can be omitted, making it possible to improve production efficiency.
There is also no need for an alignment process.
この考案は以上詳述したように、絶縁基台に複
数のリード片を一体に形成し、所定のリード片の
上面に接着剤層を介して感圧チツプを固定するよ
うにしたから、部品点数が少なく、生産の容易な
半導体感圧装置を提供することができる。 As detailed above, this idea consists of integrally forming multiple lead pieces on an insulating base, and fixing the pressure-sensitive chip to the upper surface of the predetermined lead piece via an adhesive layer, which reduces the number of parts. Accordingly, it is possible to provide a semiconductor pressure-sensitive device that is easy to produce and has a small amount of noise.
第１図は従来の半導体感圧装置を示す断面図、
第２図はこの考案による半導体感圧装置の一実施
例の要部を示す断面図である。
１……基台、３……半導体感圧チツプ、６，７
……リード片、１１……圧力導入孔、１３……弾
性接着剤層、１４……連通孔。
FIG. 1 is a cross-sectional view showing a conventional semiconductor pressure-sensitive device.
FIG. 2 is a sectional view showing a main part of an embodiment of the semiconductor pressure-sensitive device according to this invention. 1... Base, 3... Semiconductor pressure sensitive chip, 6, 7
... Lead piece, 11 ... Pressure introduction hole, 13 ... Elastic adhesive layer, 14 ... Communication hole.
Claims (1)
ード片を一体に形成し、所定のリード片の上面に
接着剤層を介して感圧チツプを固定するととも
に、上記圧力導入孔を上記チツプの受圧部に連通
させるための連通孔を上記リード片に形成し、さ
らに感圧チツプの設定用リード片の熱膨張係数を
感圧チツプのそれと等しくなるように選定したこ
とを特徴とする半導体感圧装置。 A plurality of lead pieces are integrally formed on an insulating base having a fluid pressure introduction hole, a pressure sensitive chip is fixed to the upper surface of a predetermined lead piece via an adhesive layer, and the pressure sensitive chip is fixed to the upper surface of a predetermined lead piece through an adhesive layer. A semiconductor sensor characterized in that a communication hole is formed in the lead piece for communicating with the pressure receiving part of the chip, and the thermal expansion coefficient of the lead piece for setting the pressure-sensitive chip is selected to be equal to that of the pressure-sensitive chip. Pressure device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10840381U JPS5814137U (en) | 1981-07-20 | 1981-07-20 | semiconductor pressure sensitive device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10840381U JPS5814137U (en) | 1981-07-20 | 1981-07-20 | semiconductor pressure sensitive device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814137U JPS5814137U (en) | 1983-01-28 |
| JPS6236112Y2 true JPS6236112Y2 (en) | 1987-09-14 |
Family
ID=29902810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10840381U Granted JPS5814137U (en) | 1981-07-20 | 1981-07-20 | semiconductor pressure sensitive device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814137U (en) |
-
1981
- 1981-07-20 JP JP10840381U patent/JPS5814137U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5814137U (en) | 1983-01-28 |
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