JPS54103684A - Production of semiconductor pressure transducing element - Google Patents
Production of semiconductor pressure transducing elementInfo
- Publication number
- JPS54103684A JPS54103684A JP1071578A JP1071578A JPS54103684A JP S54103684 A JPS54103684 A JP S54103684A JP 1071578 A JP1071578 A JP 1071578A JP 1071578 A JP1071578 A JP 1071578A JP S54103684 A JPS54103684 A JP S54103684A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- film
- substrate
- type
- glass layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Pressure Sensors (AREA)
Abstract
PURPOSE: To obtain diaphragms of thin thickness with good reproducibility and high accuracy be bonding a Si substrate which is beforehand opened with windows to a Si wafer which becomes diaphragm part and polishing the diaphragm part to thin.
CONSTITUTION: Regions 12 for P+ type electrode contact are diffusion-formed in the specified regions of an N type Si substrate 11 and openings are made in the SiO2 film 15 having been formed at this time, through which P type strain gauge regions 13 and P type lead regions 14 connecting to the regions 12 are respectively diffused. Next, the openings of the film 15 are covered and the glass powder mixed in alcohol is coated over the entire surface of this film 15, thence a fired glass layer 16 is formed. On the other hand, separately with this, a Si substrate 17 having a window 19 in its central part is prepared, and a SiO2 film 18 is deposited on its surface. Thereafter, this film 18 and the previous glass layer 16 are superposed and heated to bond these. The glass layer 16 having exposed in the windows 19 is etched away. Next, the substrate 11 is polished and thinned from the surface until the regions 12 expose, after which the broken layer of the surface is removed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1071578A JPS54103684A (en) | 1978-02-01 | 1978-02-01 | Production of semiconductor pressure transducing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1071578A JPS54103684A (en) | 1978-02-01 | 1978-02-01 | Production of semiconductor pressure transducing element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54103684A true JPS54103684A (en) | 1979-08-15 |
Family
ID=11757989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1071578A Pending JPS54103684A (en) | 1978-02-01 | 1978-02-01 | Production of semiconductor pressure transducing element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54103684A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6439075A (en) * | 1987-08-05 | 1989-02-09 | Nippon Denso Co | Semiconductor pressure sensor and manufacture thereof |
| JPH01239882A (en) * | 1988-03-19 | 1989-09-25 | Nippon Denso Co Ltd | Semiconductor pressure sensor |
| US4975390A (en) * | 1986-12-18 | 1990-12-04 | Nippondenso Co. Ltd. | Method of fabricating a semiconductor pressure sensor |
| JPH06163941A (en) * | 1992-11-24 | 1994-06-10 | Fujikura Ltd | Semiconductor pressure sensor |
| WO2023176082A1 (en) * | 2022-03-16 | 2023-09-21 | ローム株式会社 | Mems sensor |
-
1978
- 1978-02-01 JP JP1071578A patent/JPS54103684A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4975390A (en) * | 1986-12-18 | 1990-12-04 | Nippondenso Co. Ltd. | Method of fabricating a semiconductor pressure sensor |
| JPS6439075A (en) * | 1987-08-05 | 1989-02-09 | Nippon Denso Co | Semiconductor pressure sensor and manufacture thereof |
| JPH01239882A (en) * | 1988-03-19 | 1989-09-25 | Nippon Denso Co Ltd | Semiconductor pressure sensor |
| JPH06163941A (en) * | 1992-11-24 | 1994-06-10 | Fujikura Ltd | Semiconductor pressure sensor |
| WO2023176082A1 (en) * | 2022-03-16 | 2023-09-21 | ローム株式会社 | Mems sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4783237A (en) | Solid state transducer and method of making same | |
| US4625561A (en) | Silicon capacitive pressure sensor and method of making | |
| US4003127A (en) | Polycrystalline silicon pressure transducer | |
| US3853650A (en) | Stress sensor diaphragms over recessed substrates | |
| US4287772A (en) | Strain gage transducer and process for fabricating same | |
| US3819431A (en) | Method of making transducers employing integral protective coatings and supports | |
| JPS54103684A (en) | Production of semiconductor pressure transducing element | |
| EP0127176A3 (en) | Integrated pressure sensor | |
| CN208500348U (en) | MEMS SOI wafer and MEMS sensor | |
| JPS5451490A (en) | Semiconductor pressure converter | |
| JP3054651B2 (en) | Semiconductor pressure sensor and method of manufacturing the same | |
| JP2541884B2 (en) | Method for manufacturing dielectric isolation substrate | |
| JPS562671A (en) | Manufacture of semiconductor diaphragm | |
| US4318936A (en) | Method of making strain sensor in fragile web | |
| JPH0230188A (en) | Manufacturing method of semiconductor pressure sensor | |
| JP3173905B2 (en) | Semiconductor pressure sensor | |
| JPS57190366A (en) | Manufacture of semiconductor pressure sensor | |
| JPS56148870A (en) | Semiconductor presssure converter | |
| JPS5522849A (en) | Manufacturing method of material for magnetic- electrical conversion element | |
| JPS5821336A (en) | Manufacture of semiconductor element | |
| JPS6474736A (en) | Formation of element isolating region | |
| JPH04251985A (en) | Semiconductor pressure sensor | |
| JPS5568679A (en) | Semiconductor pressure sensor and fabrication of the same | |
| JPS6032782Y2 (en) | solid state imaging device | |
| JPS59188138A (en) | Manufacture of semiconductor device |