JPS5522849A - Manufacturing method of material for magnetic- electrical conversion element - Google Patents
Manufacturing method of material for magnetic- electrical conversion elementInfo
- Publication number
- JPS5522849A JPS5522849A JP9579778A JP9579778A JPS5522849A JP S5522849 A JPS5522849 A JP S5522849A JP 9579778 A JP9579778 A JP 9579778A JP 9579778 A JP9579778 A JP 9579778A JP S5522849 A JPS5522849 A JP S5522849A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- conversion element
- substrate
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000006087 Silane Coupling Agent Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003822 epoxy resin Substances 0.000 abstract 2
- 229920000647 polyepoxide Polymers 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010445 mica Substances 0.000 abstract 1
- 229910052618 mica group Inorganic materials 0.000 abstract 1
- 239000003921 oil Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Hall/Mr Elements (AREA)
Abstract
PURPOSE: To make a sticking layer very thin and prevent perfectly occurrence of a pin-hole of a bonding face by coating before a processing a silane coupling agent on a non- organic opaque water layer surface.
CONSTITUTION: A semiconductor thin film 4 is formed on a substrate of mica and others. Successively, a non-organic opaque water layer 3 of SiO or SiO2 and others is formed on the layer 3. Therefore, a silane coupling agent of silicon oil and others is coated onto the layer 3. Next, it bonded through an epoxy resin to a magnetic- electric conversion element substrate of ferriteand others to remove the substrate having the semiconductor film 2 provided thereon. According to such a process, a sticking layer 2 of the epoxy resin and others can be formed very thin and a pin-hole in the bonding surface be not occurred at all.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9579778A JPS5522849A (en) | 1978-08-08 | 1978-08-08 | Manufacturing method of material for magnetic- electrical conversion element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9579778A JPS5522849A (en) | 1978-08-08 | 1978-08-08 | Manufacturing method of material for magnetic- electrical conversion element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5522849A true JPS5522849A (en) | 1980-02-18 |
JPS5635036B2 JPS5635036B2 (en) | 1981-08-14 |
Family
ID=14147424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9579778A Granted JPS5522849A (en) | 1978-08-08 | 1978-08-08 | Manufacturing method of material for magnetic- electrical conversion element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5522849A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5975689A (en) * | 1982-10-22 | 1984-04-28 | Nec Corp | Magneto-resistance effect element |
JPS60257187A (en) * | 1984-06-01 | 1985-12-18 | Denki Onkyo Co Ltd | Manufacture of semiconductor element |
JPH05243636A (en) * | 1992-10-26 | 1993-09-21 | Asahi Chem Ind Co Ltd | Mangetoelectric transducer |
-
1978
- 1978-08-08 JP JP9579778A patent/JPS5522849A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5975689A (en) * | 1982-10-22 | 1984-04-28 | Nec Corp | Magneto-resistance effect element |
JPH0517715B2 (en) * | 1982-10-22 | 1993-03-09 | Nippon Electric Co | |
JPS60257187A (en) * | 1984-06-01 | 1985-12-18 | Denki Onkyo Co Ltd | Manufacture of semiconductor element |
JPH05243636A (en) * | 1992-10-26 | 1993-09-21 | Asahi Chem Ind Co Ltd | Mangetoelectric transducer |
Also Published As
Publication number | Publication date |
---|---|
JPS5635036B2 (en) | 1981-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5745259A (en) | Resin sealing type semiconductor device | |
IE810271L (en) | Semiconductor device having a protective layer | |
JPS55111148A (en) | Semiconductor device | |
JPS5522293A (en) | Magnetic bubble memory element | |
JPS5522849A (en) | Manufacturing method of material for magnetic- electrical conversion element | |
JPS55156343A (en) | Manufacture of semiconductor device | |
JPS5748249A (en) | Semiconductor device | |
JPS52104870A (en) | Manufacture for semiconductor device | |
JPS55130841A (en) | Increasing method of adhesive strength between photoresist film and glass | |
JPS53146300A (en) | Production of silicon carbide substrate | |
JPS5568679A (en) | Semiconductor pressure sensor and fabrication of the same | |
JPS5730334A (en) | Protection of wiring layer | |
JPS5797629A (en) | Manufacture of semiconductor device | |
JPS54107260A (en) | Semiconductor device | |
JPS53108771A (en) | Semiconductor device | |
JPS54124975A (en) | Manufacture of semiconductor element | |
JPS53105973A (en) | Manufacture of semiconductor device | |
JPS54149466A (en) | Semiconductor element | |
JPS57177542A (en) | Manufacturing method for semiconductor device | |
JPS54150972A (en) | Forming method for semiconductor thin film | |
JPS5441676A (en) | Photo resist coating unit | |
JPS5469091A (en) | Manufacture of semiconductor device | |
JPS54112744A (en) | Selectively etching method for insulating layer | |
JPS5775447A (en) | Semiconductor device | |
JPS5799781A (en) | Manufacture of semiconductor device |