JPS54150972A - Forming method for semiconductor thin film - Google Patents
Forming method for semiconductor thin filmInfo
- Publication number
- JPS54150972A JPS54150972A JP5895378A JP5895378A JPS54150972A JP S54150972 A JPS54150972 A JP S54150972A JP 5895378 A JP5895378 A JP 5895378A JP 5895378 A JP5895378 A JP 5895378A JP S54150972 A JPS54150972 A JP S54150972A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- semiconductor thin
- insb
- polished
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title abstract 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000004857 zone melting Methods 0.000 abstract 2
- 229910005542 GaSb Inorganic materials 0.000 abstract 1
- 229910018605 Ni—Zn Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910000859 α-Fe Inorganic materials 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE: To increase the crystalline property for the low fusing-point semiconductor thin film such as InSb, GaSb, GaxIn1-tSb or the like by giving the zone melting to the semiconductor thin film formed on the substrate in the inactive gas higher than the atmospheric pressure by 0.1kg/cm2.
CONSTITUTION: SiO2 layer 12 is coated on the surface of Ni-Zn ferrite substrate 11 which is mirror-polished; Hall device type groove 17 is drilled through fit-etching; and the entire surface is convered with glass 13 to be used as the foundation of InSb. Then InSb layer 14 and In layer 15 are laminated on glass 13 with coating to then receive the zone melting in the Ar gas higher than the atmosperic pressure by 0.1kg/cm2. After this, the lines caused on the surface and In2O3 layer 16 are polished away, and furthermore other layer 14 is polished away so that layer 14 may remain only within groove 17. With formation of the Hall device in such way, the crystalline property is enhanced to increase the S/N.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5895378A JPS54150972A (en) | 1978-05-19 | 1978-05-19 | Forming method for semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5895378A JPS54150972A (en) | 1978-05-19 | 1978-05-19 | Forming method for semiconductor thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54150972A true JPS54150972A (en) | 1979-11-27 |
| JPS5542494B2 JPS5542494B2 (en) | 1980-10-31 |
Family
ID=13099190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5895378A Granted JPS54150972A (en) | 1978-05-19 | 1978-05-19 | Forming method for semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54150972A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873112A (en) * | 1981-10-28 | 1983-05-02 | Nippon Hoso Kyokai <Nhk> | Laser annealing |
-
1978
- 1978-05-19 JP JP5895378A patent/JPS54150972A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873112A (en) * | 1981-10-28 | 1983-05-02 | Nippon Hoso Kyokai <Nhk> | Laser annealing |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5542494B2 (en) | 1980-10-31 |
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