JPS5522293A - Magnetic bubble memory element - Google Patents

Magnetic bubble memory element

Info

Publication number
JPS5522293A
JPS5522293A JP9591178A JP9591178A JPS5522293A JP S5522293 A JPS5522293 A JP S5522293A JP 9591178 A JP9591178 A JP 9591178A JP 9591178 A JP9591178 A JP 9591178A JP S5522293 A JPS5522293 A JP S5522293A
Authority
JP
Japan
Prior art keywords
film
pattern
stage error
insulator film
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9591178A
Other languages
Japanese (ja)
Other versions
JPS597148B2 (en
Inventor
Hiroshi Umezaki
Masaki Takahashi
Hideki Nishida
Koji Yamada
Yutaka Sugita
Katsuhiro Kaneko
Yoshitsugu Koiso
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9591178A priority Critical patent/JPS597148B2/en
Priority to GB7925858A priority patent/GB2039181B/en
Priority to NL7905963A priority patent/NL180362C/en
Priority to DE19792931825 priority patent/DE2931825C3/en
Publication of JPS5522293A publication Critical patent/JPS5522293A/en
Publication of JPS597148B2 publication Critical patent/JPS597148B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/085—Generating magnetic fields therefor, e.g. uniform magnetic field for magnetic domain stabilisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)

Abstract

PURPOSE: To reduce the stage error of the soft magnetic substance patern provided on the 2nd insulator film and thus to increase the transfer margin by forming the 2nd insulator film on the electric conductor pattern into the hardened film of the heat-resisting high molecular resin featuring a specified thickness.
CONSTITUTION: SiO2 film 7 of 100W400nm thick functioning as the 1st insulator film is provided on the magnetic film such as garnet film 1 which can hold the magnetic bubble provided on the nonmagnetic substrate. Electric conductor pattern 8 is formed on film 7, and then the solution of the heat-resisting high molecular resin such as the polyimide-group resin is coated to obtain hardened 2nd insulator film 9 of 100W1,300nm thick after the thermal treatment. As a result, the stage error on the surface of film 9 caused by pattern 8 is reduced greatly and made flat, and accordingly the stage error can also be reduced greatly for soft magnetic substance pattern 10 which is provided on film 9 and used for detection as well as the bubble transfer.
COPYRIGHT: (C)1980,JPO&Japio
JP9591178A 1978-08-07 1978-08-07 magnetic bubble memory element Expired JPS597148B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9591178A JPS597148B2 (en) 1978-08-07 1978-08-07 magnetic bubble memory element
GB7925858A GB2039181B (en) 1978-08-07 1979-07-25 Magnetic bubble memory device
NL7905963A NL180362C (en) 1978-08-07 1979-08-02 INSULATION FILM FOR A MAGNETIC CALL MEMORY.
DE19792931825 DE2931825C3 (en) 1978-08-07 1979-08-06 Magnetic bubble storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9591178A JPS597148B2 (en) 1978-08-07 1978-08-07 magnetic bubble memory element

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP59234912A Division JPS60121586A (en) 1984-11-09 1984-11-09 Magnetic bubble memory device
JP59234913A Division JPS60121587A (en) 1984-11-09 1984-11-09 Magnetic bubble memory element

Publications (2)

Publication Number Publication Date
JPS5522293A true JPS5522293A (en) 1980-02-16
JPS597148B2 JPS597148B2 (en) 1984-02-16

Family

ID=14150465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9591178A Expired JPS597148B2 (en) 1978-08-07 1978-08-07 magnetic bubble memory element

Country Status (4)

Country Link
JP (1) JPS597148B2 (en)
DE (1) DE2931825C3 (en)
GB (1) GB2039181B (en)
NL (1) NL180362C (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5725044U (en) * 1980-07-18 1982-02-09
JPS5727481A (en) * 1980-07-23 1982-02-13 Fujitsu Ltd Manufacture of bubble memory
JPS57102100U (en) * 1980-12-16 1982-06-23
JPS58196682A (en) * 1982-05-12 1983-11-16 Hitachi Ltd Production of magnetic bubble memory element
JPS5948887A (en) * 1982-09-13 1984-03-21 Fujitsu Ltd Production of magnetic bubble element
JPS59112487A (en) * 1982-12-20 1984-06-28 Fujitsu Ltd Manufacture of bubble memory device
JPS6337345U (en) * 1977-01-24 1988-03-10

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0509555B1 (en) * 1982-12-15 1995-07-26 Sharp Kabushiki Kaisha A method of making a magneto-optic memory device
EP0319636B1 (en) * 1982-12-15 1993-03-31 Sharp Kabushiki Kaisha Magneto-optic memory device
DE3382791T2 (en) * 1982-12-15 1995-12-07 Sharp Kk Magneto-optical memory.
CA1224270A (en) * 1983-09-16 1987-07-14 Junji Hirokane Magneto-optic memory element
JPS63117741U (en) * 1987-01-26 1988-07-29

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337345U (en) * 1977-01-24 1988-03-10
JPS5725044U (en) * 1980-07-18 1982-02-09
JPS5727481A (en) * 1980-07-23 1982-02-13 Fujitsu Ltd Manufacture of bubble memory
JPS57102100U (en) * 1980-12-16 1982-06-23
JPS6128313Y2 (en) * 1980-12-16 1986-08-22
JPS58196682A (en) * 1982-05-12 1983-11-16 Hitachi Ltd Production of magnetic bubble memory element
JPH0223955B2 (en) * 1982-05-12 1990-05-25 Hitachi Ltd
JPS5948887A (en) * 1982-09-13 1984-03-21 Fujitsu Ltd Production of magnetic bubble element
JPS59112487A (en) * 1982-12-20 1984-06-28 Fujitsu Ltd Manufacture of bubble memory device
JPS6228511B2 (en) * 1982-12-20 1987-06-20 Fujitsu Ltd

Also Published As

Publication number Publication date
DE2931825C3 (en) 1982-03-04
NL180362C (en) 1987-02-02
DE2931825A1 (en) 1980-02-21
JPS597148B2 (en) 1984-02-16
GB2039181A (en) 1980-07-30
NL7905963A (en) 1980-02-11
DE2931825B2 (en) 1981-06-25
GB2039181B (en) 1982-09-02

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