JPS5444883A - Semiconductor pressure converter - Google Patents

Semiconductor pressure converter

Info

Publication number
JPS5444883A
JPS5444883A JP11131277A JP11131277A JPS5444883A JP S5444883 A JPS5444883 A JP S5444883A JP 11131277 A JP11131277 A JP 11131277A JP 11131277 A JP11131277 A JP 11131277A JP S5444883 A JPS5444883 A JP S5444883A
Authority
JP
Japan
Prior art keywords
region
film
wiring layer
diffused
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11131277A
Other languages
Japanese (ja)
Other versions
JPS6124836B2 (en
Inventor
Shunji Shiromizu
Tetsuji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11131277A priority Critical patent/JPS5444883A/en
Priority to SE7808751A priority patent/SE7808751L/en
Publication of JPS5444883A publication Critical patent/JPS5444883A/en
Publication of JPS6124836B2 publication Critical patent/JPS6124836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
    • G01R19/16542—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies for batteries
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/10—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means
    • G08B17/11—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means using an ionisation chamber for detecting smoke or gas

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE: A thin part which deforms by fluid pressure is provided to a semiconductor single-crystal substrate and when an electrode wiring layer is fitted after a diffused resistance layer is formed there, the width of the wiring layer is made narrower than that of the resistance layer so as to reduce hysteresis against the temperature variation of an offset voltage, thereby obtaining high performance.
CONSTITUTION: At the center part of N type Si substrate 11, thick diaphragm 12 is formed, masking with SiO2 film 141 is done except P type diffused-resistance formation region 13, and BSG film 142 is adhered to the entire surface. Through a heat treatment, B in film 142 is diffused to form P type region 13 in the region of diaphragm 12 and then, the entire surface is covered with PSG film 143. Afterward, those stacked films on region 13 are provided with a contact hole, Al electrode wiring layer 151 and 152 are provided, and protection with PSG film 144 is done. In this constitution, the width of wiring layer 151 and 152 is made narrower than that of region 13. Consequently, the precision of pressure conversion improves remarkably.
COPYRIGHT: (C)1979,JPO&Japio
JP11131277A 1977-09-16 1977-09-16 Semiconductor pressure converter Granted JPS5444883A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11131277A JPS5444883A (en) 1977-09-16 1977-09-16 Semiconductor pressure converter
SE7808751A SE7808751L (en) 1977-09-16 1978-08-18 BATTERY-POWERED IONIZATION ROCKER UNIT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11131277A JPS5444883A (en) 1977-09-16 1977-09-16 Semiconductor pressure converter

Publications (2)

Publication Number Publication Date
JPS5444883A true JPS5444883A (en) 1979-04-09
JPS6124836B2 JPS6124836B2 (en) 1986-06-12

Family

ID=14558024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11131277A Granted JPS5444883A (en) 1977-09-16 1977-09-16 Semiconductor pressure converter

Country Status (2)

Country Link
JP (1) JPS5444883A (en)
SE (1) SE7808751L (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637187A (en) * 1992-07-15 1994-02-10 Nippondenso Co Ltd Semiconductor strain sensor
JP2000340805A (en) * 1999-04-19 2000-12-08 Motorola Inc Electronic part and manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110027U (en) * 1989-02-10 1990-09-03

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841070A (en) * 1971-09-27 1973-06-16
JPS51143380A (en) * 1975-06-04 1976-12-09 Hitachi Ltd Semiconductor pressure converter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841070A (en) * 1971-09-27 1973-06-16
JPS51143380A (en) * 1975-06-04 1976-12-09 Hitachi Ltd Semiconductor pressure converter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637187A (en) * 1992-07-15 1994-02-10 Nippondenso Co Ltd Semiconductor strain sensor
JP2000340805A (en) * 1999-04-19 2000-12-08 Motorola Inc Electronic part and manufacture

Also Published As

Publication number Publication date
SE7808751L (en) 1979-02-20
JPS6124836B2 (en) 1986-06-12

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