JPS57202785A - Semiconductor device - Google Patents

Abstract

PURPOSE:To simplify the handling of a substrate to be performed subsequent to the formation of an electrode layer by a method wherein, in the semiconductor device with a semiconductive layer and an electrode layer to be wired contacting with the semiconductor layer provided on an insulating or semiconductive substrate, all the surfaces excluding the wire connected part of the electrode layer is covered by a surface protecting film. CONSTITUTION:An SiO2 film 2 is grown on the surface of an N type Si substrate 1, a hole for diffused resistance layer is provided by performing a photoetching, and a P type resistance layer 3 is formed in the substrate 1 by diffusing boron. Then, a hole is provided again on the SiO2 film located on the layer 3 which is formed when the above photoetching is performed, Al is evaporated on the whole surface, unnecessary parts are removed by etching, and only the electrode layer 4 contacting to the layer 3 is left alone. Subsequently, PSG layer 5, which will be turned to a surface protecting film of 1mum in thickness is coated on the whole surface, and only the wire-connected part 4a of the wire connected to the electrode layer 4 is exposed using the hole 6 which is formed a little larger than the wire connected part 4a. Then, an etching is performed on the back side of the substrate 1 opposing to the layer 3, and the above is used as an electrostrictive plate 8. The electrode layer 4 of the semiconductor pressure sensor formed through the above procedures will never be damaged.