JPS5734372A - Semiconductor pressure transducer - Google Patents
Semiconductor pressure transducerInfo
- Publication number
- JPS5734372A JPS5734372A JP10947980A JP10947980A JPS5734372A JP S5734372 A JPS5734372 A JP S5734372A JP 10947980 A JP10947980 A JP 10947980A JP 10947980 A JP10947980 A JP 10947980A JP S5734372 A JPS5734372 A JP S5734372A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- single crystal
- strained
- built
- functions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 6
- 239000013078 crystal Substances 0.000 abstract 5
- 230000000994 depressogenic effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Abstract
PURPOSE:To attain facile adjustment of the thickness of an adhesive layer by a method wherein an Ni-Au layer which has a specified thickness is utilized when a surrounding thickened region of a single crystal substrate which has a diffused resistance element on one surface and a depressed region to be strained on another surface is attached to a single crystal substrate which functions as a base. CONSTITUTION:An Si-diaphragm which is used as a part of a semiconductor pressure transducer is built of an Si single crystal plate 1 which functions as a pressure sensing element and another Si single crystal plate 6 which functions as a base. In this arrangement more than one resistance elements 2 which give piezo-resistive effect are built by diffusion and arranged them in a bridge circuit on one surface and a depressed region to be strained 3 is built by selective etching on another surface. Next a laminated layer which consists of Ni-Au layer 4a which consists of a 1-1.5mum thick nonelectrolytic Ni plated layer and a 2,000-2,500mum thick nonelectrolytic Au plated layer and a soldering layer 5a is utilized as an adhesive agent when a surrounding thickened supporter 31 which supports a thinned part of the region to be strained 3 is fixed to an Si single crystal plate 6 as a base which has a through hole 61.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10947980A JPS5734372A (en) | 1980-08-09 | 1980-08-09 | Semiconductor pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10947980A JPS5734372A (en) | 1980-08-09 | 1980-08-09 | Semiconductor pressure transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5734372A true JPS5734372A (en) | 1982-02-24 |
Family
ID=14511279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10947980A Pending JPS5734372A (en) | 1980-08-09 | 1980-08-09 | Semiconductor pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5734372A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57171235A (en) * | 1981-04-15 | 1982-10-21 | Toshiba Corp | Semiconductor pressure converter |
| JPS59224534A (en) * | 1983-06-03 | 1984-12-17 | Citizen Watch Co Ltd | Pressure to electricity transducer |
-
1980
- 1980-08-09 JP JP10947980A patent/JPS5734372A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57171235A (en) * | 1981-04-15 | 1982-10-21 | Toshiba Corp | Semiconductor pressure converter |
| JPS59224534A (en) * | 1983-06-03 | 1984-12-17 | Citizen Watch Co Ltd | Pressure to electricity transducer |
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