JPS6449989A - Manufacture of sample for hall effect measurement - Google Patents
Manufacture of sample for hall effect measurementInfo
- Publication number
- JPS6449989A JPS6449989A JP62207273A JP20727387A JPS6449989A JP S6449989 A JPS6449989 A JP S6449989A JP 62207273 A JP62207273 A JP 62207273A JP 20727387 A JP20727387 A JP 20727387A JP S6449989 A JPS6449989 A JP S6449989A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- crystal
- sample
- hall effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
PURPOSE:To evaluate the accurate crystal property of a P-type GaAs crystal substrate by forming a passivation film on the surface of the crystal substrate and the surface of a P-type electrode arranged on the crystal substrate. CONSTITUTION:A crystal substrate 4 of P-type GaAs is laminated on a semi- insulating GaAs substrate 3-5mum thickness and a P-type electrode material 5 made of In-Zn alloy is arranged at a corner part on the substrate 4. The passivation film 6 made of SiN is formed on the surfaces of the substrate 4 and an electrode couple 5-1,000Angstrom thickness. Then the substrates 3 and 4 and electrode material 5 are heated to about 4,500 deg.C to alloy the electrode material 5, thereby forming an ohmic electrode 7. The passivation film 6 on the electrode 7 is ground with a razor, etc., to expose the electrode 7, thereby obtaining a sample for Hall effect measurement. Consequently, the correct crystal property of the substrate can be evaluated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62207273A JPS6449989A (en) | 1987-08-20 | 1987-08-20 | Manufacture of sample for hall effect measurement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62207273A JPS6449989A (en) | 1987-08-20 | 1987-08-20 | Manufacture of sample for hall effect measurement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6449989A true JPS6449989A (en) | 1989-02-27 |
Family
ID=16537065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62207273A Pending JPS6449989A (en) | 1987-08-20 | 1987-08-20 | Manufacture of sample for hall effect measurement |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6449989A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011086855A (en) * | 2009-10-19 | 2011-04-28 | Showa Denko Kk | Method of manufacturing semiconductor light-emitting element |
| CN115655832A (en) * | 2022-12-09 | 2023-01-31 | 华芯半导体研究院(北京)有限公司 | Compound semiconductor epitaxial wafer Hall sample preparation device |
-
1987
- 1987-08-20 JP JP62207273A patent/JPS6449989A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011086855A (en) * | 2009-10-19 | 2011-04-28 | Showa Denko Kk | Method of manufacturing semiconductor light-emitting element |
| CN115655832A (en) * | 2022-12-09 | 2023-01-31 | 华芯半导体研究院(北京)有限公司 | Compound semiconductor epitaxial wafer Hall sample preparation device |
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