JPS577168A - Manufacture of mis photoelectric converter - Google Patents
Manufacture of mis photoelectric converterInfo
- Publication number
- JPS577168A JPS577168A JP8069880A JP8069880A JPS577168A JP S577168 A JPS577168 A JP S577168A JP 8069880 A JP8069880 A JP 8069880A JP 8069880 A JP8069880 A JP 8069880A JP S577168 A JPS577168 A JP S577168A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- grooves
- sio2
- substrate
- rear side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To contrive the improvement of the yield of an MIS element having uneveness on the surface by providing an ohmic electrode on the rear of an Si substrate wherein an Si3N4 film having the thickness permitting conduction is formed on the surface and ohmic contact to the electrode at the rear side is also finished and a counter electrode is provided on the Si3N4. CONSTITUTION:SiO2 masks 8, 11, 12 are applied on the (100) surface of a P type Si substrate 1 for anisotropic etching and grooves 9 having V grooves and pedestal convex parts are formed by adjusting etching time. Grooves 10 where the cracks on a scribed groove 5 are removed are simultaneously formed. Next, the removal of etching is applied to the SiO2 and an ohmic contact Al electrode 2 is evaporated on the rear side and an Si3N4 film 3 is formed on the surface by reacting plasmatic nitride gas and the Si substrate at 200-600 deg.C and sintering for ohmic contact is applied to the rear side and Al2 as well. Next, an Al and Ni multiple electrode 4, a pad electrode 11 and a lead 22 are selectively formed on the flat surface only to cover the electrodes 4, 11 with an SiO2 reflection-proof film 21. In this composition, a device having little leakage and high photoelectric conversion efficienty can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8069880A JPS577168A (en) | 1980-06-14 | 1980-06-14 | Manufacture of mis photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8069880A JPS577168A (en) | 1980-06-14 | 1980-06-14 | Manufacture of mis photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS577168A true JPS577168A (en) | 1982-01-14 |
Family
ID=13725541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8069880A Pending JPS577168A (en) | 1980-06-14 | 1980-06-14 | Manufacture of mis photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577168A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6453468A (en) * | 1987-04-13 | 1989-03-01 | Nukem Gmbh | Solar battery |
-
1980
- 1980-06-14 JP JP8069880A patent/JPS577168A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6453468A (en) * | 1987-04-13 | 1989-03-01 | Nukem Gmbh | Solar battery |
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