JPS561566A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS561566A
JPS561566A JP7720979A JP7720979A JPS561566A JP S561566 A JPS561566 A JP S561566A JP 7720979 A JP7720979 A JP 7720979A JP 7720979 A JP7720979 A JP 7720979A JP S561566 A JPS561566 A JP S561566A
Authority
JP
Japan
Prior art keywords
etched
metal
semiconductor element
junction
vicinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7720979A
Other languages
Japanese (ja)
Inventor
Toshio Kushiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7720979A priority Critical patent/JPS561566A/en
Publication of JPS561566A publication Critical patent/JPS561566A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To contrive the decrease of thermal resistance in a semiconductor element by selectively etching the surface from the back surface of a substrate to the vicinity of P-N junction in parallel with the surface and filling metal in the etched portion. CONSTITUTION:Ti or the like 6 is selectively evaporated on the back surface of a substrate 1 after forming an electrode 3, with a mask 6 it is etched to the vicinity of the P-N junction 2 to form a groove 7. Then, metal 8 is evaporated and polished to retain the metal 8a. According to this configuration, the portion not etched retains the thickness as heretofore, and can handle the chip after polishing in the same manner as the conventional one and can reduce the thermal resistance to one- several-th of the conventional value.
JP7720979A 1979-06-19 1979-06-19 Semiconductor element Pending JPS561566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7720979A JPS561566A (en) 1979-06-19 1979-06-19 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7720979A JPS561566A (en) 1979-06-19 1979-06-19 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS561566A true JPS561566A (en) 1981-01-09

Family

ID=13627428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7720979A Pending JPS561566A (en) 1979-06-19 1979-06-19 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS561566A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940574A (en) * 1982-08-30 1984-03-06 Mitsubishi Electric Corp Semiconductor element
US7504707B2 (en) 2003-06-05 2009-03-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940574A (en) * 1982-08-30 1984-03-06 Mitsubishi Electric Corp Semiconductor element
US7504707B2 (en) 2003-06-05 2009-03-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US7629226B2 (en) 2003-06-05 2009-12-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof

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