JP2011086855A - Method of manufacturing semiconductor light-emitting element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element that performs heat treatment of an indium zinc oxide (IZO) film without scattering Zn. <P>SOLUTION: The method of manufacturing a semiconductor light-emitting element has processes of: laminating an n-type semiconductor layer 102, a light-emitting layer 105, and a p-type semiconductor layer 106 on one surface 101c of a substrate 101 in this order; forming a transparent conductive film 55 that contains a Zn oxide on a surface 106c of the p-type semiconductor layer 106; forming an insulation protective film 56 containing an oxide of any of Si, Al, and Ti so as to cover the transparent conductive film 55; performing heat treatment of the transparent conductive film 55 covered by the insulation protective film 56; and forming an electrode 111. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor light emitting device, and more particularly to a method for manufacturing a semiconductor light emitting device in which heat treatment of an IZO film is performed without scattering Zn.

  In recent years, GaN-based compound semiconductors have attracted attention as semiconductor materials for short wavelength light emitting devices. In general, GaN-based compound semiconductors are formed on a substrate such as a sapphire single crystal, various oxides, and a group III-V compound such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). It is formed using thin film forming means.

  In-plane current diffusion of a thin film made of a GaN-based compound semiconductor is small, and the resistance of a p-type GaN-based compound semiconductor is higher than that of an n-type GaN-based compound semiconductor. The current hardly spreads in the in-plane direction of the p-type semiconductor layer only by laminating the p-type electrode made of metal on the surface of the (hereinafter referred to as p-type semiconductor layer). Therefore, in a light emitting device (LED) having a laminated semiconductor layer in which an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer are laminated, when a p-type electrode is laminated on the p-type semiconductor layer, the p-type electrode Only the light emitting layer directly under the light is emitted. In addition, a part of the light emitted from the light emitting layer is blocked by the p-type electrode, and there is a problem that the light emission efficiency of the light emitting element is lowered.

By providing the p-type electrode with translucency, light emission generated immediately below the p-type electrode can be efficiently extracted outside the semiconductor light emitting device. And as a p-type electrode which has translucency, the ohmic electrode which consists of electroconductive metal oxides, such as IZO, is known (patent documents 1-3).
Patent Document 1 relates to an amorphous silicon solar cell, and a transparent electric film such as ITO (indium tin oxide) is used as a transparent electrode layer. Patent Document 2 relates to a method for manufacturing a group III-V compound semiconductor electrode. After forming a protective layer on an electrode material made of Au or an Au alloy, heat treatment is performed, whereby the conductivity of the electrode material is determined. A configuration is disclosed in which the electrode material is made transparent while maintaining the thickness. Patent Document 3 relates to a semiconductor light-emitting device, and in the annealing process for achieving adhesion and ohmic contact with a p-type GaN layer by containing gallium in the transparent conductive film, The structure which suppresses that electroconductivity falls is disclosed.

In the manufacturing process of the semiconductor light emitting device including the ohmic electrode, conventionally, after the ohmic electrode is formed on the p-type semiconductor layer, the ohmic electrode is improved in order to improve the translucency and conductivity of the ohmic electrode. The electrode is crystallized by heat treatment (annealing). Thereafter, an n-type electrode is formed so as to be bonded to the n-type semiconductor layer exposed by mesa processing of the laminated semiconductor layer, and a p-type electrode is formed so as to be bonded to the ohmic electrode. Finally, an insulating protective film is formed so as to cover a portion other than the n-type electrode and a portion other than the p-type electrode.
However, when an IZO (Indium Zinc Oxide (In ₂ O ₃ —ZnO)) film containing Zn as a dopant is used as the ohmic electrode, Zn is scattered from the IZO film in the heat treatment step. There was a problem that the Zn concentration of the film was lowered, and the translucency and conductivity of the IZO film were lowered.

JP 05-48127 A Japanese Patent Application Laid-Open No. 07-302770 JP 2006-179618 A

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for manufacturing a semiconductor light emitting element in which heat treatment of an IZO film is performed without scattering Zn.

In order to achieve the above object, the present invention employs the following configuration. That is,
(1) A step of laminating an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer in this order on one surface of a substrate, and a step of forming a transparent conductive film containing Zn oxide on the surface of the p-type semiconductor layer; A step of forming an insulating protective film containing an oxide of Si, Al or Ti so as to cover the transparent conductive film, a step of heat-treating the transparent conductive film covered with the insulating protective film, and an electrode Forming a semiconductor light-emitting element.

(2) After heat-treating the transparent conductive film, excluding a part of the insulating protective film, exposing a part of the transparent conductive film containing the Zn oxide, and then bonding the transparent conductive film to the transparent conductive film. An electrode is formed, The manufacturing method of the semiconductor light emitting element as described in (1) characterized by the above-mentioned.
(3) The method for manufacturing a semiconductor light-emitting element according to (1) or (2), wherein the heat treatment is performed in a temperature range of 500 ° C. to 800 ° C.

(4) The method for manufacturing a semiconductor light-emitting element according to any one of (1) to (3), wherein the transparent conductive film is any one of IZO, AZO, and GZO.
(5) The method for manufacturing a semiconductor light-emitting element according to any one of (1) to (4), wherein the transparent conductive film has a thickness of 100 to 5000 mm.
(6) The semiconductor light-emitting element according to any one of (1) to (5), wherein the insulating protective film is any one of SiO ₂ , TiO _{2, and} SiO ₂ —Al ₂ O ₃ composite film. Production method.

(7) The method for manufacturing a semiconductor light-emitting element according to any one of (1) to (6), wherein the insulating protective film has a thickness of 100 to 2000 mm.
(8) The semiconductor light-emitting device according to any one of (1) to (7), wherein the n-type semiconductor layer, the light-emitting layer, and the p-type semiconductor layer are mainly composed of a gallium nitride-based semiconductor. Device manufacturing method.

  According to said structure, the manufacturing method of the semiconductor light-emitting device which heat-processes an IZO film | membrane can be provided, without scattering Zn.

  The method for manufacturing a semiconductor light-emitting device of the present invention includes a step of laminating an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in this order on one surface of a substrate, and a transparent material containing Zn oxide on the surface of the p-type semiconductor layer. A step of forming a conductive film; a step of forming an insulating protective film containing an oxide of Si, Al, or Ti so as to cover the transparent conductive film; and the transparent conductive film covered with the insulating protective film In the heat treatment, the insulating protective film does not scatter Zn contained in the transparent conductive film and does not scatter the Zn in the transparent conductive film. The transparent conductive film can be crystallized while maintaining the Zn concentration. Thereby, the transparency (translucency) and conductivity of the transparent conductive film can be improved, and the light emission efficiency of the semiconductor light emitting device can be improved.

  In the method for manufacturing a semiconductor light emitting device of the present invention, after the transparent conductive film is heat-treated, a part of the transparent conductive film is exposed except for a part of the insulating protective film, and then bonded to the transparent conductive film. Since the electrode is formed, the transparent conductive film is crystallized while maintaining the concentration of Zn in the transparent conductive film without scattering Zn contained in the transparent conductive film during the heat treatment. One electrode can be formed on the transparent conductive film with improved transparency (translucency) and conductivity, and the light emission efficiency of the semiconductor light emitting device can be improved.

  Since the manufacturing method of the semiconductor light emitting device of the present invention is configured to perform the heat treatment in a temperature range of 500 ° C. to 800 ° C., the transparent conductive film can be crystallized, and the transparency of the transparent conductive film (translucency) ) And conductivity can be improved, and the light emission efficiency of the semiconductor light emitting device can be improved.

It is a plane schematic diagram which shows an example of the semiconductor light-emitting device manufactured with the manufacturing method of the semiconductor light-emitting device of this invention. It is a cross-sectional schematic diagram in the A-A 'line of FIG. FIG. 3 is a schematic cross-sectional view of the stacked semiconductor layer shown in FIG. 2. It is a flowchart figure which shows an example of the manufacturing method of the semiconductor light-emitting device of this invention. It is process sectional drawing which shows an example of the manufacturing method of the semiconductor light-emitting device of this invention. It is process sectional drawing which shows an example of the manufacturing method of the semiconductor light-emitting device of this invention. It is process sectional drawing which shows an example of the manufacturing method of the semiconductor light-emitting device of this invention. It is process sectional drawing which shows an example of the manufacturing method of the semiconductor light-emitting device of this invention. It is process sectional drawing which shows an example of the manufacturing method of the semiconductor light-emitting device of this invention. It is a cross-sectional schematic diagram which shows an example of the lamp | ramp using the semiconductor light-emitting device manufactured by the manufacturing method of the semiconductor light-emitting device of this invention.

Hereinafter, modes for carrying out the present invention will be described.
(First embodiment)
(Semiconductor light emitting device)
1 to 3 are diagrams illustrating an example of a semiconductor light emitting device manufactured by a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention, and FIG. 1 is a schematic plan view of the semiconductor light emitting device. 2 is a schematic cross-sectional view taken along the line AA ′ of FIG. 1, and FIG. 3 is a schematic cross-sectional view of the stacked semiconductor layer shown in FIG.

As shown in FIG. 1, the semiconductor light emitting device 1 has a rectangular shape in plan view, and is provided with a cutout portion 51 that is cut out in a semicircular and semirectangular shape in plan view on one side. The portion is a notch remaining portion 52.
In the notch 51, one surface 104c of the n-type semiconductor layer 104 is exposed, and an n-type electrode 108 having a circular shape in plan view is provided on the one surface 104c.
The notch remaining portion 52 is covered with an insulating protective film 56. A p-type electrode 111 having a circular shape in plan view is provided in the region of the insulating protective film 56.
Furthermore, a transparent conductive film 55 having a shape substantially similar to that of the notch remaining portion 52 is disposed under the insulating protective film 56. An outer periphery 55 f of the transparent conductive film 55 is covered with an insulating protective film 56.

As shown in FIG. 2, the semiconductor light emitting device 1 is configured by sequentially stacking a buffer layer 102, a base layer 103, and a laminated semiconductor layer 20 on one surface 101 c of a substrate 101. The stacked semiconductor layer 20 is configured by stacking an n-type semiconductor layer 104, a light emitting layer 105, and a p-type semiconductor layer 106 in this order from the substrate 101 side.
The laminated semiconductor layer 20 has one side surface cut out in a rectangular shape in cross section to form a cutout portion 51, and the remaining portion without being cut out serves as a cutout remaining portion 52.
In the notch 51, one surface 104c of the n-type semiconductor layer 104 is exposed, and the n-type electrode 108 is formed on the one surface 104c.

In the notch remaining portion 52, a transparent conductive film 55 is formed on a surface (hereinafter referred to as a surface) 106c on the opposite side to the substrate 101 of the p-type semiconductor layer 106.
An insulating protective film 56 is formed so as to cover the transparent conductive film 55. The insulating protective film 56 is provided with a hole 56e, and a p-type electrode 111 is formed so as to fill the hole 56e. The p-type electrode 111 is in contact with the transparent conductive film 55 containing Zn oxide. A surface (hereinafter referred to as a surface) 111c on the side opposite to the substrate 101 of the p-type electrode 111 is exposed.
The insulating protective film 56 is formed so as to cover the outer periphery 55 f of the transparent conductive film 55. The insulating protective film 56 is formed so as to completely cover the transparent conductive film 55 in contact with the surface 106c of the p-type semiconductor layer 106 at a portion beyond the outer periphery 55f.
The film thickness of the transparent conductive film 55 is l ₁ , and the film thickness of the insulating protective film 56 is l ₂ . The light emission direction is indicated by an arrow f.
Hereinafter, each member will be described.

<Board>
The substrate 101 is not particularly limited as long as the substrate 101 is transparent and a group III nitride semiconductor crystal is epitaxially grown on the surface, and various substrates can be selected and used. For example, sapphire, zinc oxide, magnesium oxide, zirconium oxide, magnesium aluminum oxide, gallium oxide, indium oxide, lithium gallium oxide, lithium aluminum oxide, neodymium gallium oxide, lanthanum strontium aluminum tantalum, strontium titanium oxide, titanium oxide, hafnium, A substrate made of tungsten, molybdenum, or the like can be used.
Among the above substrates, a sapphire substrate having a c-plane as a main surface is particularly preferable, and the buffer layer 102 may be formed on the c-plane of sapphire.

Note that when the buffer layer 102 is formed by a sputtering method, an oxide substrate, a metal substrate, or the like that is known to cause chemical modification by contact with ammonia at a high temperature can be used.
In addition, when the buffer layer 102 is formed by a sputtering method, the temperature of the substrate 101 can be kept low. Therefore, even when the substrate 101 made of a material that decomposes at a high temperature is used, the substrate 101 is damaged. Each layer can be formed on the substrate without giving.

<Laminated semiconductor layer>
The stacked semiconductor layer 20 is a layer made of, for example, a group III nitride semiconductor. As shown in FIG. 2, the n-type semiconductor layer 104, the light-emitting layer 105, and the p-type semiconductor layer 106 are formed on the substrate 101. They are stacked in this order.
As shown in FIG. 3, each of the n-type semiconductor layer 104, the light-emitting layer 105, and the p-type semiconductor layer 106 can be composed of a plurality of semiconductor layers.
Note that the stacked semiconductor layer 20 can be formed with a good crystallinity when formed by the MOCVD method, but by optimizing the conditions also by the sputtering method, a semiconductor layer having a crystallinity superior to that of the MOCVD method can be formed. . Hereinafter, description will be made sequentially.

<Buffer layer>
Buffer layer 102 is preferably made of polycrystalline _{Al x Ga 1-x N (} 0 ≦ x ≦ 1) , and more preferably those of the single crystal _{Al x Ga 1-x N (} 0 ≦ x ≦ 1) .
As described above, the buffer layer 102 can be, for example, made of polycrystalline Al _x Ga _1-x N (0 ≦ x ≦ 1) and having a thickness of 0.01 to 0.5 μm. When the thickness of the buffer layer 102 is less than 0.01 μm, the buffer layer 102 may not sufficiently obtain an effect of reducing the difference in lattice constant between the substrate 101 and the base layer 103. Further, when the thickness of the buffer layer 102 exceeds 0.5 μm, although the function as the buffer layer 102 is not changed, the film formation processing time of the buffer layer 102 becomes long, and the productivity may be reduced. There is.
The buffer layer 102 has a function of relaxing the difference in lattice constant between the substrate 101 and the base layer 103 and facilitating the formation of a C-axis oriented single crystal layer on the (0001) C plane of the substrate 101. Therefore, when the single crystal base layer 103 is stacked over the buffer layer 102, the base layer 103 with higher crystallinity can be stacked. In the present invention, it is preferable to perform the buffer layer forming step, but it may not be performed.

  Further, the group III nitride semiconductor crystal forming the buffer layer 102 may have a single crystal structure. By controlling the growth conditions, the group III nitride semiconductor crystal grows not only in the upward direction but also in the in-plane direction to form a single crystal structure. Therefore, by controlling the film formation conditions of the buffer layer 102, the buffer layer 102 made of a crystal of a group III nitride semiconductor having a single crystal structure can be obtained. When the buffer layer 102 having such a single crystal structure is formed on the substrate 101, the buffer function of the buffer layer 102 works effectively, so that the group III nitride semiconductor formed thereon has a good orientation. It becomes a crystal film having the property and crystallinity.

<Underlayer>
_{Examples of the} base layer 103 include Al _x Ga _y In _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z = 1), and Al _x Ga _1-x N (0 ≦ x <1) is preferable because the base layer 103 with good crystallinity can be formed.
The film thickness of the underlayer 103 is preferably 0.1 μm or more, more preferably 0.5 μm or more, and most preferably 1 μm or more. An Al _x Ga _1-x N layer with good crystallinity is more easily obtained when the thickness is increased.
In order to improve the crystallinity of the base layer 103, the base layer 103 is preferably not doped with impurities. However, when p-type or n-type conductivity is required, acceptor impurities or donor impurities can be added.

<N-type semiconductor layer>
As shown in FIG. 3, the n-type semiconductor layer 104 is preferably composed of an n-contact layer 104a and an n-clad layer 104b. The n contact layer 104a can also serve as the n clad layer 104b.
The n contact layer 104a is a layer for providing an n-type electrode. The n contact layer 104a is preferably composed of an Al _x Ga _1-x N layer (0 ≦ x <1, preferably 0 ≦ x ≦ 0.5, more preferably 0 ≦ x ≦ 0.1). .
The n contact layer 104a is preferably doped with an n-type impurity, and the n-type impurity is preferably 1 × 10 ¹⁷ to 1 × 10 ²⁰ / cm ³ , preferably 1 × 10 ¹⁸ to 1 × 10 ¹⁹ / cm. ^If it contains in the density | concentration of ³ , it is preferable at the point of the maintenance of favorable ohmic contact with an n-type electrode. Although it does not specifically limit as an n-type impurity, For example, Si, Ge, Sn, etc. are mentioned, Preferably Si and Ge are mentioned.
The thickness of the n contact layer 104a is preferably 0.5 to 5 μm, and more preferably set to a range of 1 to 3 μm. When the film thickness of the n-contact layer 104a is in the above range, the semiconductor crystallinity is maintained well.

An n-clad layer 104b is preferably provided between the n-contact layer 104a and the light-emitting layer 105. The n-clad layer 104b is a layer that injects carriers into the light emitting layer 105 and confines carriers. The n-clad layer 104b can be formed of AlGaN, GaN, GaInN, or the like. Alternatively, a heterojunction of these structures or a superlattice structure in which a plurality of layers are stacked may be used. Needless to say, when the n-cladding layer 104b is formed of GaInN, it is desirable to make it larger than the band gap of GaInN of the light emitting layer 105.
The film thickness of the n-clad layer 104b is not particularly limited, but is preferably 0.005 to 0.5 μm, and more preferably 0.005 to 0.1 μm. The n-type doping concentration of the n-clad layer 104b is preferably 1 × 10 ¹⁷ to 1 × 10 ²⁰ / cm ³ , more preferably 1 × 10 ¹⁸ to 1 × 10 ¹⁹ / cm ³ . A doping concentration within this range is preferable in terms of maintaining good crystallinity and reducing the operating voltage of the device.

<Light emitting layer>
As the light emitting layer 105 stacked on the n-type semiconductor layer 104, there is a light emitting layer 105 having a single quantum well structure or a multiple quantum well structure.
As the well layer 105b having a multiple quantum well structure as shown in FIG. 3, a group III nitride semiconductor layer made of Ga _1-y In _y N (0 <y <0.4) is usually used. The film thickness of the well layer 105b can be set to a film thickness that provides a quantum effect, for example, 1 to 10 nm, and preferably 2 to 6 nm, from the viewpoint of light emission output.
As the barrier layer 105a, Al _z Ga _1-z N (0 ≦ z <0.3) having a band gap energy larger than that of the well layer 105b is used. The well layer 105b and the barrier layer 105a may or may not be doped with impurities by design.

<P-type semiconductor layer>
As shown in FIG. 3, the p-type semiconductor layer 106 is generally composed of a p-clad layer 106a and a p-contact layer 106b. The p contact layer 106b can also serve as the p clad layer 106a.
The p-cladding layer 106a is a layer for confining carriers in the light emitting layer 105 and injecting carriers. The p-cladding layer 106a is not particularly limited as long as it has a composition larger than the band gap energy of the light-emitting layer 105 and can confine carriers in the light-emitting layer 105, but is preferably Al _x Ga _1-x N. (0 <x ≦ 0.4).
When the p-clad layer 106a is made of such AlGaN, it is preferable in terms of confining carriers in the light-emitting layer. The thickness of the p-clad layer 106a is not particularly limited, but is preferably 1 to 400 nm, more preferably 5 to 100 nm.
The p-type doping concentration of the p-clad layer 106a is preferably 1 × 10 ¹⁸ to 1 × 10 ²¹ / cm ³ , more preferably 1 × 10 ¹⁹ to 1 × 10 ²⁰ / cm ³ . When the p-type dope concentration is in the above range, a good p-type crystal can be obtained without reducing the crystallinity.
The p-clad layer 106a may have a superlattice structure in which a plurality of layers are stacked.

<Transparent conductive film>
The transparent conductive film 55 is preferably a transparent conductive film containing Zn oxide. As the transparent conductive film containing Zn oxide, for example, IZO (indium zinc oxide (In ₂ O ₃ —ZnO)), AZO (aluminum zinc oxide (ZnO—Al ₂ O ₃ )), or GZO (gallium zinc oxide (ZnO)). -Ga ₂ O ₃₎₎ is preferable. By using these materials, transparency (translucency) and conductivity can be improved. Note that high transparency means high light transmission from the light emitting layer, that is, high light transmission.

The transparent conductive film 55 is preferably a film containing indium oxide having a crystallized structure, and in particular, a film containing In ₂ O ₃ crystal having a hexagonal crystal structure or a bixbite structure (for example, a known film) IZO etc.) are preferred. By using a film containing an indium oxide having a crystallized structure, the light-transmitting property and the conductivity can be further improved.

The film thickness l ₁ of the transparent conductive film 55 is preferably 100 to 5000 mm, more preferably 500 to 4000 mm, and still more preferably 700 to 3500 mm.
When the film thickness l ₁ of the transparent conductive film 55 is less than 100 mm, the conductivity is insufficient. On the contrary, when the film thickness l ₁ of the transparent conductive film 55 exceeds 5000 mm, the transparency (translucency) becomes insufficient.

<Insulating protective film>
As shown in FIG. 2, an insulating protective film 56 is formed so as to cover the transparent conductive film 55. The insulating protective film 56 is formed so as to cover the outer periphery 55f of the transparent conductive film 55, and the insulating protective film 56 is in contact with the surface 106c of the p-type semiconductor layer 106 at a portion beyond the outer periphery 55f. It is formed so as to completely cover the film 55. Thereby, no part of the transparent conductive film 55 is exposed from the insulating protective film 56.

The insulating protective film 56 is preferably an insulating protective film containing an oxide containing any one of Si, Al, and Ti. Si, Al, as the insulating protective film comprising an oxide containing either one metal of Ti, for _example, and the like SiO 2, TiO ₂ or _SiO 2 _-Al 2 _{O 3} composite membrane. Since the insulating protective film 56 using these materials can shield the transparent conductive film 55 with high airtightness, Zn is removed from Zn oxide contained in the transparent conductive film 55 when the transparent conductive film 55 is heat-treated. Can not be scattered.

Thickness _{l 2} of the insulating protection film 56 is desirably a 100A～2000A, more desirably to 150A～1500A, it is further desirable that the 200A～1300A.
If the film thickness l ₂ of the insulating protective film 56 is less than 100Å, the shielding effect of Zn is not sufficient, risk of scattering the part of Zn occurs. Conversely, if the thickness l ₂ of the insulating protective film 56 is greater than 2000Å, since transparency (translucency) may become insufficient undesirably.

<P-type electrode>
As shown in FIG. 2, the insulating protective film 56 is provided with a hole 56e, and a p-type electrode 111 is formed so as to fill the hole 56e. The p-type electrode 111 is in contact with the transparent conductive film 55. Further, the exposed surface 111c of the p-type electrode 111 is used as a bonding pad, and a mounting substrate, a bonding wire, or the like is bonded via a bump.
The p-type electrode 111 is cylindrical. However, the shape of the p-type electrode 111 is not limited to this, and may be, for example, a prismatic shape.

The p-type electrode 111 is preferably made of Au, Al, or an alloy containing any of these metals, and more preferably made of Au.
By forming the p-type electrode 111 using Au, Al, or an alloy containing any of these metals, the p-type electrode 111 and the transparent conductive film 55 can be bonded with high adhesion. Is not easily peeled off from the transparent conductive film 55.
In addition, since Au and Al have high adhesion to bumps (solder balls, bonding balls), when bonded to the mounting substrate via the bumps, the mounting substrate and the p-type electrode 111 are firmly bonded. Thus, the semiconductor light emitting element 1 is not easily peeled off from the mounting substrate.
Similarly, even when bonding wires are bonded via bumps, the bonding wires and the p-type electrode 111 are firmly bonded so that the bonding wires are not easily peeled off from the semiconductor light emitting device 1.

  The height (film thickness) of the p-type electrode 111 is preferably 50 nm to 2000 nm, more preferably 100 nm to 1500 nm, and still more preferably 200 nm to 1000 nm. If the thickness of the p-type electrode 111 is less than 50 nm, the adhesion with the bumps is deteriorated. Further, even if the thickness of the p-type electrode 111 is larger than 2000 nm, there is no particular advantage, and it is not preferable because it only increases the cost.

The diameter of the surface 111c of the p-type electrode 111 is preferably set to be slightly larger than the diameter of the bump. Thereby, the bonding wire can be easily joined at the time of manufacturing the lamp. If the diameter of the surface 111c of the p-type electrode 111 is significantly larger than the diameter of the bump, the bonding operation is facilitated, but the light extraction area is reduced and the light extraction efficiency is reduced. On the contrary, if the diameter of the surface 111c of the p-type electrode 111 is significantly smaller than the diameter of the bump, the bonding performance is deteriorated, the bonding work becomes difficult, and the manufacturing yield of the semiconductor light emitting device is lowered.
For example, the diameter of the surface 111c of the p-type electrode 111 is set to 60 μm to 100 μm.

  The layout of the p-type electrode 111 when viewed in plan is not limited to the position shown in FIG. 1 and may be formed anywhere on the transparent conductive film 55. For example, it may be formed at a position farthest from the n-type electrode 108 or near the center of the semiconductor light emitting element 1. However, if it is formed too close to the n-type electrode 108, a short circuit may occur during bonding.

<N-type electrode>
As shown in FIGS. 1 and 2, the n-type electrode 108 has a cylindrical shape. However, the shape of the n-type electrode 108 is not limited to this, and may be, for example, a prismatic shape.
The n-type electrode 108 may be any electrode that can be used as a bonding pad, and known materials and structures that are used as electrodes of semiconductor light-emitting elements can be used. For example, an electrode having a two-layer structure of Ti / Au is used.

  The material and configuration of the n-type electrode 108 may be the same material and configuration as the p-type electrode 111. That is, a transparent conductive film 55 containing Zn oxide is formed on the n-type semiconductor layer 104, and an insulating protective film 56 containing an oxide of Si, Al, or Ti is formed so as to cover the transparent conductive film 55. The n-type electrode 108 may be formed so as to fill a hole provided in a part of the insulating protective film 56.

(Manufacturing method of semiconductor light emitting device)
FIG. 4 is a flowchart showing an example of a method for manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
As shown in FIG. 4, the method for manufacturing a semiconductor light emitting device according to the embodiment of the present invention includes a laminated semiconductor layer forming step S1, a transparent conductive film forming step S2, an insulating protective film forming step S3, and a transparent conductive film heat treatment. It has process S4 and electrode formation process S5.
Hereinafter, the manufacturing method of the semiconductor light-emitting device which is embodiment of this invention is demonstrated using FIGS.

<Laminated semiconductor layer forming step S1>
The laminated semiconductor layer forming step S1 is a step of forming the laminated semiconductor layer 20.
First, a substrate 101 such as a sapphire substrate is prepared. Next, the buffer layer 102 is stacked on the one surface 101c of the substrate 101 by sputtering. At this time, pretreatment for cleaning the one surface 101c may be performed in the chamber by exposing the substrate 101 to Ar or N ₂ plasma.
When the buffer layer 102 having a single crystal structure is formed by sputtering, the ratio of the nitrogen flow rate to the nitrogen source flow rate in the chamber and the flow rate of the inert gas is 50% to 100%, preferably about 75%. It is desirable to be Note that the buffer layer 102 may be formed not only by the sputtering method described above but also by a known MOCVD method.

  Next, a single crystal base layer 103 is formed over the buffer layer 102. The base layer 103 is preferably formed using a sputtering method. An apparatus using a sputtering method can have a simple structure as compared with an MOCVD method, an MBE method, or the like.

  The temperature of the substrate 101 when the base layer 103 is formed, that is, the growth temperature of the base layer 103 is preferably 800 ° C. or higher, more preferably 900 ° C. or higher, and 1000 ° C. or higher. Most preferably. This is because by increasing the temperature of the substrate 101 when forming the base layer 103, atom migration easily occurs and dislocation looping easily proceeds. In addition, the temperature of the substrate 101 when the base layer 103 is formed needs to be lower than the temperature at which the crystal is decomposed, and is preferably less than 1200 ° C. If the temperature of the substrate 101 when forming the base layer 103 is within the above temperature range, the base layer 103 with good crystallinity can be obtained.

Next, an n-type semiconductor layer 104 is formed on the base layer 103 by laminating an n-contact layer 104a and an n-cladding layer 104b. For example, sputtering or MOCVD is used.
Next, the light emitting layer 105 is formed over the n-type semiconductor layer 104. A sputtering method or an MOCVD method is preferably used, and an MOCVD method is more preferably used.
Specifically, the barrier layers 105a and the well layers 105b are alternately and repeatedly stacked, and the barrier layers 105a may be stacked in the order in which the barrier layers 105a are disposed on the n-type semiconductor layer 104 side and the p-type semiconductor layer 106 side. .

Next, the p-type semiconductor layer 106 is formed over the light emitting layer 105. For example, sputtering or MOCVD is used. Specifically, the p-cladding layer 106a and the p-contact layer 106b may be sequentially stacked.
Through the above steps, as shown in FIG. 5, the buffer layer 102, the base layer 103, and the laminated semiconductor layer 20 are formed on the one surface 101 c of the substrate 101.

<Transparent conductive film formation process S2>
The transparent conductive film forming step S2 is a step of forming the transparent conductive film 55.
First, the substrate 101 on which the buffer layer 102, the base layer 103, and the laminated semiconductor layer 20 are formed is carried into the chamber of the sputtering apparatus.
Next, a metal mask provided with a hole having a predetermined shape is disposed on the surface 106 c of the p-type semiconductor layer 106.
Next, after reducing the pressure in the chamber of the sputtering apparatus, sputtering of a target containing Zn oxide is performed. Thereby, as shown in FIG. 6, a transparent conductive film 55 containing Zn oxide is formed on the surface 106 c of the p-type semiconductor layer 106.

As a target including a Zn oxide, IZO (indium zinc oxide (In ₂ O ₃ —ZnO)), AZO (aluminum zinc oxide (ZnO—Al ₂ O ₃ )), or GZO (gallium zinc oxide (ZnO—Ga ₂ O)). ₃ )) etc. are used.
As described above, the film thickness l ₁ of the transparent conductive film 55 is 100 to 5000 mm.
The sputtering condition is, for example, a power of 400 to 600 W.

<Insulating protective film forming step S3>
The insulating protective film forming step S3 is a step of forming the insulating protective film 56.
First, the substrate 101 on which the transparent conductive film 55 is formed is carried into a chamber of a predetermined sputtering apparatus.
Next, after reducing the pressure in the chamber of the sputtering apparatus, sputtering of a target containing any one of Si, Al, and Ti is performed. Thereby, as shown in FIG. 7, an insulating protective film 56 covering the transparent conductive film 55 is formed. The insulating protective film 56 also covers the exposed surface 106 c of the p-type semiconductor layer 106.

As a target containing any one of Si, Al, and Ti, a SiO ₂ , TiO _2, or SiO ₂ —Al ₂ O ₃ composite film is used.
As described above, the insulating protective film 56 has a film thickness l ₂ of 100 to 2000 mm.
The sputtering condition is, for example, a power of 300 to 500W.
A method such as co-sputtering may be used in the transparent conductive film forming step S2 and the insulating protective film forming step S3.

<Transparent conductive film heat treatment step S4>
The transparent conductive film heat treatment step S4 is a step of performing a heat treatment of the transparent conductive film 55.
First, the substrate 101 on which the insulating protective film 56 is formed is carried into a predetermined heat treatment apparatus (oven).
Next, after evacuating the inside of the heat treatment apparatus (oven), N ₂ gas is introduced to make an atmosphere free of O ₂ .
Next, the temperature of the heat treatment (hereinafter referred to as heat treatment temperature) is set to 500 ° C. to 800 ° C. and held for about 1 minute to several hours, and the substrate 101 on which the insulating protective film 56 is formed is subjected to heat treatment (annealing).

By the heat treatment, the transparent conductive film 55 is crystallized, and the transparency (translucency) and conductivity of the transparent conductive film 55 are improved. For example, when an IZO film is used as the transparent conductive film 55, an amorphous IZO film is formed by, for example, an IZO film containing a hexagonal In ₂ O ₃ crystal or a bixbite structure In It is transferred to an IZO film containing ₂ O ₃ crystals. Thereby, transparency (translucency) and electroconductivity are improved.
In addition, since the transparent conductive film 55 is covered with the insulating protective film 56 during the heat treatment, Zn contained in the transparent conductive film 55 is not scattered and the concentration of Zn contained in the transparent conductive film 55 is maintained. .

  The heat treatment temperature is preferably 500 ° C to 800 ° C. If the heat treatment temperature is less than 500 ° C., the transparent conductive film 55 containing Zn oxide may not be sufficiently crystallized, and the light transmittance of the transparent conductive film 55 containing Zn oxide will not be sufficiently high. There is a case. On the contrary, when the heat treatment temperature exceeds 800 ° C., the transparent conductive film 55 containing Zn oxide is crystallized, but the light transmittance of the transparent conductive film 55 containing Zn oxide is not sufficiently high. There is a case. Further, when heat treatment is performed at a temperature exceeding 800 ° C., there is a possibility that the laminated semiconductor layer 20 under the transparent conductive film 55 containing Zn oxide is deteriorated.

The heat treatment is preferably performed in an atmosphere not containing O ₂ . The atmosphere not containing O ₂ is, for example, an N ₂ gas atmosphere, an inert gas atmosphere, or a mixed gas atmosphere of N ₂ gas and H ₂ gas. By performing the heat treatment in the atmosphere, the transparent conductive film 55 containing Zn oxide can be efficiently crystallized. For example, an amorphous IZO film is efficiently transferred to an IZO film containing In ₂ O ₃ crystals having a hexagonal structure by heat treatment, and the sheet resistance of the IZO film is greatly reduced. Also, the influence of impurities is eliminated.
In this embodiment, an oven is used as the heat treatment apparatus. However, the present invention is not limited to this. For example, a hot plate may be used.

<Electrode forming step S5>
The electrode forming step S5 is a step of forming one electrode and the other electrode.
In this embodiment, the notch 51 is formed, the n-type electrode 108 that is the other electrode is formed so as to be joined to the n-type semiconductor layer, and then the p-type electrode that is joined to the transparent conductive film 55 is formed. A mold electrode 111 is formed.

<Formation of notch>
First, a resist is applied so as to cover the insulating protective film 56, and then dried to form an insoluble resist portion.
Next, a part of the insoluble resist part is exposed through a mask having a hole in the part to be etched to form a soluble resist part.
Next, the soluble resist portion is dissolved and removed with an organic solvent to form a resist mask including the insoluble resist portion.
Next, a part of the laminated semiconductor layer 20 is etched through the resist mask to form a notch 51 shown in FIG. 8 and a notch remaining 52 left without being notched.
Next, the resist mask is removed using a resist remover.

<Formation of n-type electrode>
Next, Ti is formed with a predetermined thickness on one surface 104c of the n-type semiconductor layer 104 using a sputtering method or the like through a mask in which a hole is formed in a portion where the n-type electrode 108 is to be formed. The n-type electrode 108 having a two-layer structure of Ti / Au shown in FIG. 9 is formed by laminating with a predetermined film thickness.

In addition, as shown in FIG. 8, the notch part 51 is formed in a cross-sectional view rectangular shape. Further, as shown in FIG. 1, the notch 51 has a semicircular semirectangular shape in plan view. One surface 104c of the n-type semiconductor layer 104 is exposed from the notch 51. The depth of the notch 51 is set to such a depth that the n contact layer 104a of the n-type semiconductor layer 104 is exposed.
Further, the photolithography method and the etching method shown here are examples of a method of forming the cutout portion 51, and the method of forming the cutout portion 51 is not limited to this method.

<Formation of p-type electrode>
First, a resist is applied so as to cover the insulating protective film 56, and then dried to form an insoluble resist portion.
Next, a part of the insoluble resist part is exposed through a mask having a hole in the part to be etched to form a soluble resist part.
Next, the soluble resist portion is dissolved and removed with an organic solvent to form a resist mask including the insoluble resist portion.
Next, a part of the insulating protective film 56 is etched through the resist mask to provide a hole 56e having a circular shape in plan view. From the hole 56e, a surface (hereinafter referred to as a surface) 55c of the transparent conductive film 55 opposite to the substrate 101 is exposed.

Next, Au is laminated with a predetermined film thickness on one surface 104c of the n-type semiconductor layer 104 by a sputtering method or the like through a mask having holes of the same size and layout as the hole 56e. A p-type electrode 111 made of Au is formed so as to fill the portion 56e and completely shield the transparent conductive film 55 from the outside. Thereby, the influence that impurities etc. are mixed in the transparent conductive film 55 is removed.
Next, the resist mask is removed using a resist remover.
Through the above steps, the n-type electrode 108 and the p-type electrode 111 shown in FIG. 9 are formed.
Finally, the semiconductor light emitting device shown in FIGS. 1 and 2 is manufactured by cutting along a dicing line 58 shown in FIG.

  In this embodiment, the target material is sputtered using a metal mask so that the transparent conductive film 55 has a desired shape in plan view. However, the method for making the transparent conductive film 55 in a desired shape is limited to this. is not. For example, the transparent conductive film 55 may be formed on the entire surface 106c of the p-type semiconductor layer 106, and then etched, so that the transparent conductive film 55 has a desired shape in plan view.

When an IZO film is used as the transparent conductive film 55, it is preferable to perform etching immediately after the film formation and in an amorphous state before the heat treatment. The IZO film after the heat treatment becomes, for example, an IZO film containing an In ₂ O ₃ crystal having a hexagonal crystal structure, which makes etching difficult.
On the other hand, since the amorphous IZO film is excellent in etching property, it can be accurately and easily formed into a desired shape at the stage where the IZO target is sputtered to form the amorphous IZO film. For the etching, wet etching using an etching solution such as ITO-07N (manufactured by Kanto Chemical Co., Inc.) or dry etching using an etching gas such as Cl ₂ , SiCl ₄ , or BCl ₃ can be used.

In the present embodiment, the n-type electrode 108 is formed first. However, the present invention is not limited to this, and the p-type electrode 111 may be formed first.
In the present embodiment, the p-type electrode 111 and the n-type electrode 108 are formed in separate steps, but the present invention is not limited to this, and may be formed in the same step.

The semiconductor light emitting device 1 manufactured by the method for manufacturing a semiconductor light emitting device according to the embodiment of the present invention can be used by being incorporated in a lamp, for example.
FIG. 10 is a schematic cross-sectional view showing an example of a lamp using a semiconductor light emitting device manufactured by the method for manufacturing a semiconductor light emitting device according to the embodiment of the present invention.
As shown in FIG. 10, the lamp 3 is a bullet type, and the semiconductor light emitting element 1 shown in the first embodiment is mounted thereon. In the lamp 3, the semiconductor light emitting element 1 is disposed on the first frame 31. The p-type electrode 111 of the semiconductor light-emitting element 1 is joined to the frame 31 by a wire 33, and the n-type electrode 108 of the semiconductor light-emitting element 1 is joined to the other frame 32 by a wire 34. The semiconductor light emitting element 1 is surrounded and sealed by a mold 35 made of a transparent resin.

In addition, the lamp | ramp 3 can be set as the structure which combined the semiconductor light-emitting device 1 and fluorescent substance, for example, and can adjust luminescent color freely.
Further, the lamp 3 can be used for any purpose such as a bullet type for general use, a side view type for portable backlight use, and a top view type used for a display.

Moreover, the semiconductor light-emitting element 1 manufactured by the method for manufacturing a semiconductor light-emitting element according to the embodiment of the present invention can be used by being incorporated in a lighting device.
As the lighting device, for example, a lamp in which a plurality of semiconductor light emitting elements are attached to the surface of a substrate on which wirings, through holes, etc. are formed, inside a housing having a concave cross-sectional shape provided with a reflector or shade The apparatus of the structure attached to the bottom part of this can be mentioned.
For example, according to the content of Unexamined-Japanese-Patent No. 2008-16412, it can fix in the reflector for illuminating devices, and can manufacture to the illuminating device provided with the said some reflector.

  Furthermore, the semiconductor light-emitting element 1 manufactured by the method for manufacturing a semiconductor light-emitting element according to the embodiment of the present invention includes an electronic device such as a mobile phone, a display, and a panel incorporating a lamp, an automobile incorporating the electronic device, It can be used for mechanical devices such as computers and game machines.

  In the method for manufacturing the semiconductor light emitting device 1 according to the embodiment of the present invention, the n-type semiconductor layer 104, the light emitting layer 105, and the p-type semiconductor layer 106 are stacked in this order on one surface 101c of the substrate 101; A step of forming a transparent conductive film 55 containing Zn oxide on the surface 106c of the layer 106; and a step of forming an insulating protective film 56 containing an oxide of Si, Al, or Ti so as to cover the transparent conductive film 55 And the step of heat-treating the transparent conductive film 55 covered with the insulating protective film 56 and the step of forming the electrode 111. Therefore, the insulation formed so as to cover the transparent conductive film 55 during the heat treatment. The protective film 56 does not scatter Zn contained in the transparent conductive film 55, and the transparent conductive film can be crystallized while maintaining the Zn concentration in the transparent conductive film. Thereby, the transparency (translucency) and conductivity of the transparent conductive film 55 can be improved, and the light emission efficiency of the semiconductor light emitting element 1 can be improved.

  In the method for manufacturing the semiconductor light emitting device 1 according to the embodiment of the present invention, after the transparent conductive film 55 is heat-treated, a part of the transparent conductive film 55 is exposed except for a part of the insulating protective film 56, and then the transparent conductive film. Since one electrode 111 is formed so as to be bonded to the film 55, Zn contained in the transparent conductive film 55 is not scattered during the heat treatment, and the Zn concentration in the transparent conductive film 55 is maintained. The transparent conductive film 55 can be crystallized to form one electrode 111 on the transparent conductive film 55 with improved transparency (translucency) and conductivity, thereby improving the light emission efficiency of the semiconductor light emitting device 1. Can be made.

  Since the manufacturing method of the semiconductor light emitting device 1 according to the embodiment of the present invention is configured to perform the heat treatment in a temperature range of 500 ° C. to 800 ° C., the transparent conductive film 55 can be crystallized, and the transparency of the transparent conductive film 55 is improved. The light emitting efficiency of the semiconductor light emitting device 1 can be improved by improving (translucency) and conductivity.

  In the method for manufacturing the semiconductor light emitting device 1 according to the embodiment of the present invention, the transparent conductive film 55 is any one of IZO, AZO, and GZO. The conductivity can be further improved, and the light emission efficiency of the semiconductor light emitting element 1 can be further improved.

  Since the method of manufacturing a semiconductor light emitting device according to the embodiment of the present invention has a structure in which the film thickness of the transparent conductive film 55 is 100 to 5000 mm, the transparency (translucency) and conductivity of the transparent conductive film 55 are optimized. The light emission efficiency of the semiconductor light emitting device 1 can be further improved.

In the method for manufacturing a semiconductor light emitting device according to the embodiment of the present invention, since the insulating protective film 56 is configured by any one of SiO ₂ , TiO _{2, and} SiO ₂ —Al ₂ O ₃ composite film, The Zn contained in 55 is not scattered, the Zn concentration in the transparent conductive film is maintained, and the transparency (translucency) and conductivity of the transparent conductive film 55 are improved, so that the light emitting efficiency of the semiconductor light emitting device 1 is improved. Can be improved.

In the method for manufacturing a semiconductor light emitting device according to the embodiment of the present invention, since the insulating protective film 56 has a thickness of 100 to 2000 mm, Zn contained in the transparent conductive film 55 is not scattered and Zn contained in the transparent conductive film is formed. In addition, the light emitting efficiency of the semiconductor light emitting device 1 can be improved by maintaining the concentration of the transparent conductive film 55 and improving the transparency (translucency) and conductivity of the transparent conductive film 55.
Hereinafter, the present invention will be specifically described based on examples. However, the present invention is not limited only to these examples.

Example 1
<Fabrication of semiconductor light emitting device>
The semiconductor light emitting device having the structure shown in FIGS. 1 and 2 was manufactured as follows.
First, an underlayer made of undoped GaN having a thickness of 8 μm was formed on a substrate made of sapphire via a buffer layer made of AlN.
Next, after forming a Si-doped n-type GaN contact layer having a thickness of 2 μm and an n-type In _0.1 Ga _0.9 N cladding layer having a thickness of 250 nm, a Si-doped GaN barrier layer having a thickness of 16 nm and a thickness of 2 A .5 nm In _0.2 Ga _0.8 N well layer was stacked five times, and finally a light emitting layer having a multiple quantum well structure in which a barrier layer was provided was formed.
Further, a Mg-doped p-type Al _0.07 Ga _0.93 N cladding layer having a thickness of 10 nm and an Mg-doped p-type GaN contact layer having a thickness of 150 nm were sequentially formed.
The gallium nitride-based compound semiconductor layer was stacked by MOCVD under normal conditions well known in the technical field.

Next, an IZO film (Zn oxide) having a thickness of 2000 mm is formed on the surface (surface) opposite to the substrate of the p-type semiconductor layer through a metal mask having a hole having a predetermined shape by sputtering. A transparent conductive film containing).
Next, an SiO ₂ film (insulating protective film containing an oxide of Si, Al, or Ti) having a thickness of 100 mm was formed by sputtering to cover the IZO film.
Next, after placing the substrate on which the SiO ₂ film is formed in the heat treatment oven and reducing the pressure, the temperature is kept at about 500 ° C. in an inert atmosphere for 10 minutes, and the IZO film is heat treated (annealed). )

Next, the substrate subjected to the heat treatment was taken out from the heat treatment oven.
Next, a part of the laminated semiconductor layer was etched by using a photolithography method to provide a cutout part having a semicircular semi-rectangular shape in plan view to expose a part of the n contact layer.
Next, a cylindrical n-type electrode having a two-layer structure of Ti / Au was formed on the exposed surface of the n contact layer by sputtering or the like.

Next, by using a photolithography method, a part of the insulating protective film containing an oxide of Si, Al, or Ti is etched to provide a circular hole in plan view, and transparent containing Zn oxide. A part of the conductive film was exposed.
Next, a cylindrical p-type electrode was formed by sputtering so as to be bonded to the transparent conductive film containing Zn oxide.

<Evaluation of semiconductor light emitting device>
For the semiconductor light emitting device of Example 1, the forward voltage and the light emission characteristics were measured by energization with a probe needle.
The forward voltage at an applied current of 20 mA was 3.0 V, and the light emission output at an applied current of 20 mA was 20 mW.

(Comparative Example 1)
A semiconductor light emitting device of Comparative Example 1 was manufactured in the same manner as in Example 1 except that the insulating protective film containing any one of Si, Al, and Ti was not formed.
For the semiconductor light emitting device of Comparative Example 1, the forward voltage and the light emission characteristics were measured by energization with a probe needle in the same manner as in Example 1.
The forward voltage at an applied current of 20 mA was 3.7 V, and the light emission output at an applied current of 20 mA was 19 mW.

(Examples 2 to 18)
Under the conditions shown in Table 1, semiconductor light emitting devices of Examples 2 to 18 were manufactured.
For the semiconductor light emitting devices of Examples 2 to 18, the forward voltage and the light emission characteristics were measured by energization with a probe needle in the same manner as in Example 1.
The results obtained are summarized in Table 1.

  The present invention relates to a method for manufacturing a semiconductor light emitting device, and in particular, heat treatment of a transparent conductive film without scattering Zn, improving transparency (translucency) and conductivity, and improving luminous efficiency. The present invention relates to a method for manufacturing a semiconductor light emitting device that improves the above-described characteristics, and may be used in industries that manufacture or use semiconductor light emitting devices.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor light emitting element, 3 ... Lamp, 20 ... Laminated semiconductor layer, 31, 32 ... Frame, 33, 34 ... Bonding wire, 35 ... Mold (resin), 51 ... Notch part, 52 ... Notch remaining part, 55 ... Transparent conductive Membrane, 55f ... outer periphery, 56 ... insulating protective film, 56e ... hole, 58 ... dicing line, 101 ... substrate, 101c ... one side, 102 ... buffer layer, 103 ... underlayer, 104 ... n-type semiconductor layer, 104a ... n Contact layer, 104b ... n cladding layer, 104c ... one side, 105 ... light emitting layer, 105a ... barrier layer, 105b ... well layer, 106 ... p-type semiconductor layer, 106a ... p cladding layer, 106b ... p contact layer, 106c ... substrate Surface (front surface) opposite to, 108... N-type electrode, 111... P-type electrode, 111 c.

Claims (8)

Laminating an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer in this order on one surface of the substrate;
Forming a transparent conductive film containing Zn oxide on the surface of the p-type semiconductor layer;
Forming an insulating protective film containing an oxide of Si, Al or Ti so as to cover the transparent conductive film;
Heat-treating the transparent conductive film covered with the insulating protective film;
And a step of forming an electrode.   After the heat treatment of the transparent conductive film, the electrode is formed so as to be bonded to the transparent conductive film after exposing a part of the transparent conductive film except a part of the insulating protective film. The manufacturing method of the semiconductor light-emitting device according to claim 1.   The method for manufacturing a semiconductor light-emitting element according to claim 1, wherein the heat treatment is performed in a temperature range of 500 ° C. to 800 ° C. 3.   The method for manufacturing a semiconductor light-emitting element according to claim 1, wherein the transparent conductive film is any one of IZO, AZO, and GZO.   5. The method of manufacturing a semiconductor light emitting element according to claim 1, wherein the transparent conductive film has a thickness of 100 to 5000 mm. The method for manufacturing a semiconductor light emitting element according to claim 1, wherein the insulating protective film is any one of SiO ₂ , TiO _{2, and} SiO ₂ —Al ₂ O ₃ composite film.   The method for manufacturing a semiconductor light-emitting element according to claim 1, wherein the insulating protective film has a thickness of 100 to 2000 mm.   The semiconductor light-emitting device according to claim 1, wherein the n-type semiconductor layer, the light-emitting layer, and the p-type semiconductor layer are mainly composed of a gallium nitride-based semiconductor. Method.

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