JPS5723284A - Manufacture of gan diode - Google Patents

Manufacture of gan diode

Info

Publication number
JPS5723284A
JPS5723284A JP9804580A JP9804580A JPS5723284A JP S5723284 A JPS5723284 A JP S5723284A JP 9804580 A JP9804580 A JP 9804580A JP 9804580 A JP9804580 A JP 9804580A JP S5723284 A JPS5723284 A JP S5723284A
Authority
JP
Japan
Prior art keywords
layer
film
type
region
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9804580A
Other languages
Japanese (ja)
Other versions
JPS6328358B2 (en
Inventor
Kiyoshi Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP9804580A priority Critical patent/JPS5723284A/en
Publication of JPS5723284A publication Critical patent/JPS5723284A/en
Publication of JPS6328358B2 publication Critical patent/JPS6328358B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0037—Devices characterised by their operation having a MIS barrier layer

Abstract

PURPOSE:To obtain a monolithic type display device of high reproducibility and high accuracy by a method wherein is forming an MIS type GaN diode, the insulator layer is made to be a planer type one burried in the GaN surface. CONSTITUTION:A nondoped GaN crystal is epitaxially grown on a sapphire substrate 1 to obtain a GaN layer 2 showing N<+> type, and a GaN layer 3 which has been made to be N type by doping An is epitaxially grown laminatedly on the layer 2. Then, an SiO2 film 4 having a central lack part is formed on the layer 3, and Zn ions are injected using the film 4 as a mask to form an ion-implanted region 5 in the layer 3. The film 4 is removed, and a Zn ion non-transmittable film 6 having Si3N4 and the like is provided on the region 5. Then, the substrate 1 is heated in an NH3 atmosphere at about 1,000 deg.C for one hour to release Zn ions by out-diffusion process from the layer 3 not covered with film 6 and the form an N<+> type region 7. A negative electrode 9 is attached to the region 7, the film 6 is removed, and a positive electrode 8 is attached onto the exposed region 5.
JP9804580A 1980-07-16 1980-07-16 Manufacture of gan diode Granted JPS5723284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9804580A JPS5723284A (en) 1980-07-16 1980-07-16 Manufacture of gan diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9804580A JPS5723284A (en) 1980-07-16 1980-07-16 Manufacture of gan diode

Publications (2)

Publication Number Publication Date
JPS5723284A true JPS5723284A (en) 1982-02-06
JPS6328358B2 JPS6328358B2 (en) 1988-06-08

Family

ID=14209173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9804580A Granted JPS5723284A (en) 1980-07-16 1980-07-16 Manufacture of gan diode

Country Status (1)

Country Link
JP (1) JPS5723284A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183189A (en) * 1991-11-08 1993-07-23 Nichia Chem Ind Ltd Manufacture of p-type gallium nitride based compound semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183189A (en) * 1991-11-08 1993-07-23 Nichia Chem Ind Ltd Manufacture of p-type gallium nitride based compound semiconductor

Also Published As

Publication number Publication date
JPS6328358B2 (en) 1988-06-08

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