JPS55158678A - Manufacture of solar cell - Google Patents

Manufacture of solar cell

Info

Publication number
JPS55158678A
JPS55158678A JP6558479A JP6558479A JPS55158678A JP S55158678 A JPS55158678 A JP S55158678A JP 6558479 A JP6558479 A JP 6558479A JP 6558479 A JP6558479 A JP 6558479A JP S55158678 A JPS55158678 A JP S55158678A
Authority
JP
Japan
Prior art keywords
particles
sio2
substrate
organic solvent
covered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6558479A
Other languages
Japanese (ja)
Other versions
JPS5644585B2 (en
Inventor
Takeshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP6558479A priority Critical patent/JPS55158678A/en
Publication of JPS55158678A publication Critical patent/JPS55158678A/en
Publication of JPS5644585B2 publication Critical patent/JPS5644585B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain an Si single crystal by resolving Si powder and SiO2 powder into an organic solvent, applying the solution on a substrate, providing an SiO2 film containing fine Si crystals, processing the product at a high temperature, and alloying the substrate metal and Si particles. CONSTITUTION:Al 43 is evaporated on an almina-ceramic substrate 42. Then, Si particles whose diameters are about 50-100mum and weight concentration is 35% and SiO2 powder whose weight concentration is 8% are resolved into the organic solvent, and the solution is applied on said Al 43 by rotating the substrate. Then, the organic solvent is evaporated by heating and the layers of Si 41-41'' which are completely covered by SiO2 44 are formed. Then, heat is applied at about 750 deg.C, and the hardening of alloy progresses only at the back surface of the Si particles which contacts with the Al 43, but alloy is not formed in particles 41'. The portion contacting with Al becomes an Al2(SiO3)345 which is difficult to resolve in HF. By processing with HF, the particles 41' are removed, SiO2 on the surface of the particles 41 and 41'' are removed, the Si fine crystals 41 are exposed, and an Al 43 is covered by an insulting film 45. A Schottky barrier metal 46 is covered on the said film, electrodes are provided, thereby an excellent solar cell can be obtained.
JP6558479A 1979-05-29 1979-05-29 Manufacture of solar cell Granted JPS55158678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6558479A JPS55158678A (en) 1979-05-29 1979-05-29 Manufacture of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6558479A JPS55158678A (en) 1979-05-29 1979-05-29 Manufacture of solar cell

Publications (2)

Publication Number Publication Date
JPS55158678A true JPS55158678A (en) 1980-12-10
JPS5644585B2 JPS5644585B2 (en) 1981-10-20

Family

ID=13291194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6558479A Granted JPS55158678A (en) 1979-05-29 1979-05-29 Manufacture of solar cell

Country Status (1)

Country Link
JP (1) JPS55158678A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514580A (en) * 1983-12-02 1985-04-30 Sri International Particulate silicon photovoltaic device and method of making
EP0993050A2 (en) * 1998-09-08 2000-04-12 Digital Wave Inc. Substrate for producing semiconductor device, method for producing the substrate, photoelectric conversion device and method for producing the photoelectric conversion device
US6437234B1 (en) * 2000-07-27 2002-08-20 Kyocera Corporation Photoelectric conversion device and manufacturing method thereof
WO2002037576A3 (en) * 2000-10-25 2002-10-03 Steffen Jaeger Semiconductor device and method for producing the same
US6620996B2 (en) * 2000-05-29 2003-09-16 Kyocera Corporation Photoelectric conversion device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5822558A (en) * 1981-07-29 1983-02-09 Hitachi Ltd Charging generator

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514580A (en) * 1983-12-02 1985-04-30 Sri International Particulate silicon photovoltaic device and method of making
EP0993050A2 (en) * 1998-09-08 2000-04-12 Digital Wave Inc. Substrate for producing semiconductor device, method for producing the substrate, photoelectric conversion device and method for producing the photoelectric conversion device
EP0993050A3 (en) * 1998-09-08 2000-05-10 Digital Wave Inc. Substrate for producing semiconductor device, method for producing the substrate, photoelectric conversion device and method for producing the photoelectric conversion device
US6620996B2 (en) * 2000-05-29 2003-09-16 Kyocera Corporation Photoelectric conversion device
US6437234B1 (en) * 2000-07-27 2002-08-20 Kyocera Corporation Photoelectric conversion device and manufacturing method thereof
WO2002037576A3 (en) * 2000-10-25 2002-10-03 Steffen Jaeger Semiconductor device and method for producing the same

Also Published As

Publication number Publication date
JPS5644585B2 (en) 1981-10-20

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