JPS5660066A - Semiconductor strain detector - Google Patents

Semiconductor strain detector

Info

Publication number
JPS5660066A
JPS5660066A JP13577679A JP13577679A JPS5660066A JP S5660066 A JPS5660066 A JP S5660066A JP 13577679 A JP13577679 A JP 13577679A JP 13577679 A JP13577679 A JP 13577679A JP S5660066 A JPS5660066 A JP S5660066A
Authority
JP
Japan
Prior art keywords
resistor
diffused resistors
type
silicon substrate
type diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13577679A
Other languages
Japanese (ja)
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13577679A priority Critical patent/JPS5660066A/en
Publication of JPS5660066A publication Critical patent/JPS5660066A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/16—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
    • G01L5/161—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance
    • G01L5/162—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance of piezoresistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To enable the detection of the direction of and the component of a main strain by forming the first bridge circuit in which P type resistor is disposed in a <100> direction and <-110> direction on the main surface of monocrystalline silicon substrate and the second bridge circuit in which N type resistor is disposed similarly in 100 direction and <010> direction. CONSTITUTION:P type diffused resistors 1, 4 are formed in <110> direction of a (110) silicon substrate, and P type diffused resistors 2, 3 are formed in <-110> direction. This resistor bridge serves to detect the strain component e11' in the <110> direction and the strain component e22' in <-110> direction. N type diffused resistors 11, 14 are formed in the <100> direction of the (100) silicon substrate, and N type diffused resistors 12, 13 are formed in <101> direction. This resistor bridge serves to detect the strain component e11 in <100> direction and the strain component e22 in <010> direction. Then, an angle theta formed by the components ex, ey and e11, ex of the main strains can be obtained by e11-e22= (ex-ey)cos 2theta and e11'-e22'=(ex-ey)sin 2theta.
JP13577679A 1979-10-19 1979-10-19 Semiconductor strain detector Pending JPS5660066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13577679A JPS5660066A (en) 1979-10-19 1979-10-19 Semiconductor strain detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13577679A JPS5660066A (en) 1979-10-19 1979-10-19 Semiconductor strain detector

Publications (1)

Publication Number Publication Date
JPS5660066A true JPS5660066A (en) 1981-05-23

Family

ID=15159581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13577679A Pending JPS5660066A (en) 1979-10-19 1979-10-19 Semiconductor strain detector

Country Status (1)

Country Link
JP (1) JPS5660066A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0195232A2 (en) * 1985-03-20 1986-09-24 Hitachi, Ltd. Piezoresistive strain sensing device
EP0625701A1 (en) * 1987-04-24 1994-11-23 Enplas Laboratories, Inc. Force detector using piezoresistive elements
DE10154497A1 (en) * 2001-11-07 2003-05-15 Infineon Technologies Ag Integrated resistor used in Hall probes comprises a semiconductor substrate, and a longitudinal conducting p-doped region in the substrate
EP1496344A2 (en) * 2003-07-09 2005-01-12 Austriamicrosystems AG Integrated semiconductive arrangement and procedure for producing a pressure dependent signal as well as a temperature dependent signal
JP2007263781A (en) * 2006-03-29 2007-10-11 Hitachi Ltd Dynamic quantity measuring device
JP2008145342A (en) * 2006-12-12 2008-06-26 Honda Motor Co Ltd Chip for force/torque sensor
JP2010156610A (en) * 2008-12-26 2010-07-15 Kyocera Corp Acceleration sensor element and acceleration sensor
JP2012026576A (en) * 2011-09-12 2012-02-09 Hitachi-Ge Nuclear Energy Ltd Monitoring system of valve device
JP2012173287A (en) * 2011-02-18 2012-09-10 Melexis Technologies Nv Stress sensor for measuring mechanical stresses in semiconductor chip and stress compensated hall sensor
JP2012197938A (en) * 2012-04-23 2012-10-18 Hitachi-Ge Nuclear Energy Ltd Valve device monitoring system
DE102008051949B4 (en) * 2007-10-29 2019-02-14 Infineon Technologies Ag Integrated circuit with load detection element

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0195232A2 (en) * 1985-03-20 1986-09-24 Hitachi, Ltd. Piezoresistive strain sensing device
US4739381A (en) * 1985-03-20 1988-04-19 Hitachi, Ltd. Piezoresistive strain sensing device
EP0625701A1 (en) * 1987-04-24 1994-11-23 Enplas Laboratories, Inc. Force detector using piezoresistive elements
DE10154497A1 (en) * 2001-11-07 2003-05-15 Infineon Technologies Ag Integrated resistor used in Hall probes comprises a semiconductor substrate, and a longitudinal conducting p-doped region in the substrate
EP1496344A2 (en) * 2003-07-09 2005-01-12 Austriamicrosystems AG Integrated semiconductive arrangement and procedure for producing a pressure dependent signal as well as a temperature dependent signal
DE10331096A1 (en) * 2003-07-09 2005-02-10 Austriamicrosystems Ag Integrated semiconductor device and method for generating a pressure-dependent signal and method for generating a temperature-dependent signal
DE10331096B4 (en) * 2003-07-09 2014-02-13 Austriamicrosystems Ag Integrated semiconductor device and method
EP1496344A3 (en) * 2003-07-09 2008-02-06 Austriamicrosystems AG Integrated semiconductive arrangement and procedure for producing a pressure dependent signal as well as a temperature dependent signal
JP2007263781A (en) * 2006-03-29 2007-10-11 Hitachi Ltd Dynamic quantity measuring device
US8695433B2 (en) 2006-03-29 2014-04-15 Hitachi, Ltd. Mechanical-quantity measuring device
JP4697004B2 (en) * 2006-03-29 2011-06-08 株式会社日立製作所 Mechanical quantity measuring device
US7992448B2 (en) 2006-03-29 2011-08-09 Hitachi, Ltd. Mechanical-quantity measuring device
US8365609B2 (en) 2006-03-29 2013-02-05 Hitachi, Ltd. Mechanical-quantity measuring device
JP2008145342A (en) * 2006-12-12 2008-06-26 Honda Motor Co Ltd Chip for force/torque sensor
DE102008051949B4 (en) * 2007-10-29 2019-02-14 Infineon Technologies Ag Integrated circuit with load detection element
JP2010156610A (en) * 2008-12-26 2010-07-15 Kyocera Corp Acceleration sensor element and acceleration sensor
JP2012173287A (en) * 2011-02-18 2012-09-10 Melexis Technologies Nv Stress sensor for measuring mechanical stresses in semiconductor chip and stress compensated hall sensor
JP2012026576A (en) * 2011-09-12 2012-02-09 Hitachi-Ge Nuclear Energy Ltd Monitoring system of valve device
JP2012197938A (en) * 2012-04-23 2012-10-18 Hitachi-Ge Nuclear Energy Ltd Valve device monitoring system

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