JPS5660066A - Semiconductor strain detector - Google Patents
Semiconductor strain detectorInfo
- Publication number
- JPS5660066A JPS5660066A JP13577679A JP13577679A JPS5660066A JP S5660066 A JPS5660066 A JP S5660066A JP 13577679 A JP13577679 A JP 13577679A JP 13577679 A JP13577679 A JP 13577679A JP S5660066 A JPS5660066 A JP S5660066A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- diffused resistors
- type
- silicon substrate
- type diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/16—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
- G01L5/161—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance
- G01L5/162—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance of piezoresistors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To enable the detection of the direction of and the component of a main strain by forming the first bridge circuit in which P type resistor is disposed in a <100> direction and <-110> direction on the main surface of monocrystalline silicon substrate and the second bridge circuit in which N type resistor is disposed similarly in 100 direction and <010> direction. CONSTITUTION:P type diffused resistors 1, 4 are formed in <110> direction of a (110) silicon substrate, and P type diffused resistors 2, 3 are formed in <-110> direction. This resistor bridge serves to detect the strain component e11' in the <110> direction and the strain component e22' in <-110> direction. N type diffused resistors 11, 14 are formed in the <100> direction of the (100) silicon substrate, and N type diffused resistors 12, 13 are formed in <101> direction. This resistor bridge serves to detect the strain component e11 in <100> direction and the strain component e22 in <010> direction. Then, an angle theta formed by the components ex, ey and e11, ex of the main strains can be obtained by e11-e22= (ex-ey)cos 2theta and e11'-e22'=(ex-ey)sin 2theta.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13577679A JPS5660066A (en) | 1979-10-19 | 1979-10-19 | Semiconductor strain detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13577679A JPS5660066A (en) | 1979-10-19 | 1979-10-19 | Semiconductor strain detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5660066A true JPS5660066A (en) | 1981-05-23 |
Family
ID=15159581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13577679A Pending JPS5660066A (en) | 1979-10-19 | 1979-10-19 | Semiconductor strain detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5660066A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0195232A2 (en) * | 1985-03-20 | 1986-09-24 | Hitachi, Ltd. | Piezoresistive strain sensing device |
EP0625701A1 (en) * | 1987-04-24 | 1994-11-23 | Enplas Laboratories, Inc. | Force detector using piezoresistive elements |
DE10154497A1 (en) * | 2001-11-07 | 2003-05-15 | Infineon Technologies Ag | Integrated resistor used in Hall probes comprises a semiconductor substrate, and a longitudinal conducting p-doped region in the substrate |
EP1496344A2 (en) * | 2003-07-09 | 2005-01-12 | Austriamicrosystems AG | Integrated semiconductive arrangement and procedure for producing a pressure dependent signal as well as a temperature dependent signal |
JP2007263781A (en) * | 2006-03-29 | 2007-10-11 | Hitachi Ltd | Dynamic quantity measuring device |
JP2008145342A (en) * | 2006-12-12 | 2008-06-26 | Honda Motor Co Ltd | Chip for force/torque sensor |
JP2010156610A (en) * | 2008-12-26 | 2010-07-15 | Kyocera Corp | Acceleration sensor element and acceleration sensor |
JP2012026576A (en) * | 2011-09-12 | 2012-02-09 | Hitachi-Ge Nuclear Energy Ltd | Monitoring system of valve device |
JP2012173287A (en) * | 2011-02-18 | 2012-09-10 | Melexis Technologies Nv | Stress sensor for measuring mechanical stresses in semiconductor chip and stress compensated hall sensor |
JP2012197938A (en) * | 2012-04-23 | 2012-10-18 | Hitachi-Ge Nuclear Energy Ltd | Valve device monitoring system |
DE102008051949B4 (en) * | 2007-10-29 | 2019-02-14 | Infineon Technologies Ag | Integrated circuit with load detection element |
-
1979
- 1979-10-19 JP JP13577679A patent/JPS5660066A/en active Pending
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0195232A2 (en) * | 1985-03-20 | 1986-09-24 | Hitachi, Ltd. | Piezoresistive strain sensing device |
US4739381A (en) * | 1985-03-20 | 1988-04-19 | Hitachi, Ltd. | Piezoresistive strain sensing device |
EP0625701A1 (en) * | 1987-04-24 | 1994-11-23 | Enplas Laboratories, Inc. | Force detector using piezoresistive elements |
DE10154497A1 (en) * | 2001-11-07 | 2003-05-15 | Infineon Technologies Ag | Integrated resistor used in Hall probes comprises a semiconductor substrate, and a longitudinal conducting p-doped region in the substrate |
EP1496344A2 (en) * | 2003-07-09 | 2005-01-12 | Austriamicrosystems AG | Integrated semiconductive arrangement and procedure for producing a pressure dependent signal as well as a temperature dependent signal |
DE10331096A1 (en) * | 2003-07-09 | 2005-02-10 | Austriamicrosystems Ag | Integrated semiconductor device and method for generating a pressure-dependent signal and method for generating a temperature-dependent signal |
DE10331096B4 (en) * | 2003-07-09 | 2014-02-13 | Austriamicrosystems Ag | Integrated semiconductor device and method |
EP1496344A3 (en) * | 2003-07-09 | 2008-02-06 | Austriamicrosystems AG | Integrated semiconductive arrangement and procedure for producing a pressure dependent signal as well as a temperature dependent signal |
JP2007263781A (en) * | 2006-03-29 | 2007-10-11 | Hitachi Ltd | Dynamic quantity measuring device |
US8695433B2 (en) | 2006-03-29 | 2014-04-15 | Hitachi, Ltd. | Mechanical-quantity measuring device |
JP4697004B2 (en) * | 2006-03-29 | 2011-06-08 | 株式会社日立製作所 | Mechanical quantity measuring device |
US7992448B2 (en) | 2006-03-29 | 2011-08-09 | Hitachi, Ltd. | Mechanical-quantity measuring device |
US8365609B2 (en) | 2006-03-29 | 2013-02-05 | Hitachi, Ltd. | Mechanical-quantity measuring device |
JP2008145342A (en) * | 2006-12-12 | 2008-06-26 | Honda Motor Co Ltd | Chip for force/torque sensor |
DE102008051949B4 (en) * | 2007-10-29 | 2019-02-14 | Infineon Technologies Ag | Integrated circuit with load detection element |
JP2010156610A (en) * | 2008-12-26 | 2010-07-15 | Kyocera Corp | Acceleration sensor element and acceleration sensor |
JP2012173287A (en) * | 2011-02-18 | 2012-09-10 | Melexis Technologies Nv | Stress sensor for measuring mechanical stresses in semiconductor chip and stress compensated hall sensor |
JP2012026576A (en) * | 2011-09-12 | 2012-02-09 | Hitachi-Ge Nuclear Energy Ltd | Monitoring system of valve device |
JP2012197938A (en) * | 2012-04-23 | 2012-10-18 | Hitachi-Ge Nuclear Energy Ltd | Valve device monitoring system |
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