JPS54142081A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS54142081A
JPS54142081A JP4051378A JP4051378A JPS54142081A JP S54142081 A JPS54142081 A JP S54142081A JP 4051378 A JP4051378 A JP 4051378A JP 4051378 A JP4051378 A JP 4051378A JP S54142081 A JPS54142081 A JP S54142081A
Authority
JP
Japan
Prior art keywords
temperature
plus
fet
circuit
fet13
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4051378A
Other languages
Japanese (ja)
Other versions
JPS6326548B2 (en
Inventor
Tatsuji Asakawa
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP4051378A priority Critical patent/JPS54142081A/en
Publication of JPS54142081A publication Critical patent/JPS54142081A/en
Publication of JPS6326548B2 publication Critical patent/JPS6326548B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To secure a high-precision detection of the temperature and then the switching action of high accuracy by forming the temperature sensor consisting of FET and the A/D converter to digitzie the output of the temperature sensor onto the same semiconductor substrate. CONSTITUTION:Reference voltage generator ccircuit 7 featuring the flat temperature characteristics, reference voltage generator circuit 8 featuring the temperature characteristics, differential amplifier 9 and 10, and output buffer 11 are formed on the same Si sbustrate. Circuit 7 is composed of P-channel FET12 and 14 plus N-channel FET13 and 15, and the threshold levels are set identical between FET13 and 15 with the threshold level of FET14 set lower than that of FET12. Furthermore, the conductance coefficient is set equal between those FET's with the flat temperature coefficient. On the other hand, FET pairs of 15 and 16 plus 17 and 19 are provided to circuit 8 with different conductance coefficients as well as the depending property caused to the temperature. In such constitution, the power voltage is divided through resistance 20 and 21 plus amplifier 9 and then delivered through buffer 11 after detecting the fixed temperature at comparator 10.
JP4051378A 1978-04-06 1978-04-06 Semiconductor integrated circuit Granted JPS54142081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4051378A JPS54142081A (en) 1978-04-06 1978-04-06 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4051378A JPS54142081A (en) 1978-04-06 1978-04-06 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS54142081A true JPS54142081A (en) 1979-11-05
JPS6326548B2 JPS6326548B2 (en) 1988-05-30

Family

ID=12582610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4051378A Granted JPS54142081A (en) 1978-04-06 1978-04-06 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS54142081A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6047934A (en) * 1983-08-26 1985-03-15 Nec Corp Temperature detection circuit
JPH01138430A (en) * 1987-11-24 1989-05-31 Nec Corp Temperature detecting circuit
JP2007225477A (en) * 2006-02-24 2007-09-06 Elpida Memory Inc Temperature detection circuit and semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6047934A (en) * 1983-08-26 1985-03-15 Nec Corp Temperature detection circuit
JPH01138430A (en) * 1987-11-24 1989-05-31 Nec Corp Temperature detecting circuit
JP2007225477A (en) * 2006-02-24 2007-09-06 Elpida Memory Inc Temperature detection circuit and semiconductor device

Also Published As

Publication number Publication date
JPS6326548B2 (en) 1988-05-30

Similar Documents

Publication Publication Date Title
JPS6422107A (en) Voltage level detecting circuit
JPS5291472A (en) Voltage detection circuit
EP0924758A3 (en) Method and apparatus for quantifying proximity effect by measuring device performance
JPS52111648A (en) Constant voltage circuit
JPS54142081A (en) Semiconductor integrated circuit
JPS57113241A (en) Semiconductor device
JPS6447077A (en) Protective circuit for power mos field-effect transistor
JPS557664A (en) Temperature detection circuit
JPS5320554A (en) Constant current circuit
JPS54119653A (en) Constant voltage generating circuit
JPS5323546A (en) Bias circuit
JPS54148365A (en) Buffer circuit
JPS55149028A (en) Load detector
JPS56105682A (en) Sensor for temperature
JPS5381170A (en) Battery checker
JPS5554423A (en) Temperature detection circuit
JPS554543A (en) Temperature detecting circuit
JPS56134763A (en) Bipolar integrated circuit
JPS5244573A (en) Method of mesuring thermal resistance of impatt diode
JPS53120288A (en) Constant voltage semiconductor device
JPS5715291A (en) Semiconductor rom device
JPS55128931A (en) Squelch circuit
JPS5649556A (en) Mos integrated circuit
JPS5769259A (en) Voltage detecting circuit
JPS54137944A (en) Signal processing circuit