JPS54142081A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS54142081A JPS54142081A JP4051378A JP4051378A JPS54142081A JP S54142081 A JPS54142081 A JP S54142081A JP 4051378 A JP4051378 A JP 4051378A JP 4051378 A JP4051378 A JP 4051378A JP S54142081 A JPS54142081 A JP S54142081A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- plus
- fet
- circuit
- fet13
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To secure a high-precision detection of the temperature and then the switching action of high accuracy by forming the temperature sensor consisting of FET and the A/D converter to digitzie the output of the temperature sensor onto the same semiconductor substrate. CONSTITUTION:Reference voltage generator ccircuit 7 featuring the flat temperature characteristics, reference voltage generator circuit 8 featuring the temperature characteristics, differential amplifier 9 and 10, and output buffer 11 are formed on the same Si sbustrate. Circuit 7 is composed of P-channel FET12 and 14 plus N-channel FET13 and 15, and the threshold levels are set identical between FET13 and 15 with the threshold level of FET14 set lower than that of FET12. Furthermore, the conductance coefficient is set equal between those FET's with the flat temperature coefficient. On the other hand, FET pairs of 15 and 16 plus 17 and 19 are provided to circuit 8 with different conductance coefficients as well as the depending property caused to the temperature. In such constitution, the power voltage is divided through resistance 20 and 21 plus amplifier 9 and then delivered through buffer 11 after detecting the fixed temperature at comparator 10.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4051378A JPS54142081A (en) | 1978-04-06 | 1978-04-06 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4051378A JPS54142081A (en) | 1978-04-06 | 1978-04-06 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54142081A true JPS54142081A (en) | 1979-11-05 |
JPS6326548B2 JPS6326548B2 (en) | 1988-05-30 |
Family
ID=12582610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4051378A Granted JPS54142081A (en) | 1978-04-06 | 1978-04-06 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54142081A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6047934A (en) * | 1983-08-26 | 1985-03-15 | Nec Corp | Temperature detection circuit |
JPH01138430A (en) * | 1987-11-24 | 1989-05-31 | Nec Corp | Temperature detecting circuit |
JP2007225477A (en) * | 2006-02-24 | 2007-09-06 | Elpida Memory Inc | Temperature detection circuit and semiconductor device |
-
1978
- 1978-04-06 JP JP4051378A patent/JPS54142081A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6047934A (en) * | 1983-08-26 | 1985-03-15 | Nec Corp | Temperature detection circuit |
JPH01138430A (en) * | 1987-11-24 | 1989-05-31 | Nec Corp | Temperature detecting circuit |
JP2007225477A (en) * | 2006-02-24 | 2007-09-06 | Elpida Memory Inc | Temperature detection circuit and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6326548B2 (en) | 1988-05-30 |
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