JPS557664A - Temperature detection circuit - Google Patents

Temperature detection circuit

Info

Publication number
JPS557664A
JPS557664A JP8110378A JP8110378A JPS557664A JP S557664 A JPS557664 A JP S557664A JP 8110378 A JP8110378 A JP 8110378A JP 8110378 A JP8110378 A JP 8110378A JP S557664 A JPS557664 A JP S557664A
Authority
JP
Japan
Prior art keywords
fet
temperature detection
temperature
detection circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8110378A
Other languages
Japanese (ja)
Other versions
JPS6159450B2 (en
Inventor
Mitsumasa Iwamoto
Tatsuji Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP8110378A priority Critical patent/JPS557664A/en
Publication of JPS557664A publication Critical patent/JPS557664A/en
Publication of JPS6159450B2 publication Critical patent/JPS6159450B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To achieve circuit integration for the temperature detection circuit, by performing temperature detection through the use of the temperature characteristics for the threshold value of the transistor in the A/D conversion circuit. CONSTITUTION:The reference voltage from the terminal 301 is divided with the resistors R1 to R4 and it is fed to the respective gate of FET 309, 310 and 311 for temperature detection. This resistance ratio plays a role of determining the temperature detection point. By using the temperature characteristics of the threshold voltage of FET, each FET is turned off a certain temperature range, only FET 309 is ON at another range and FET 309,310 or all FET's are turned on at other cases. Accordingly, the output of (0,0,0), (1,0,0),(1,1,0) and (1,1,1) is obtained from the inverters 415, 416 and 417 to enable temperature detection. Thus, the detection circuit can be constituted on an IC substrate with FET's and resistors.
JP8110378A 1978-07-04 1978-07-04 Temperature detection circuit Granted JPS557664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8110378A JPS557664A (en) 1978-07-04 1978-07-04 Temperature detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8110378A JPS557664A (en) 1978-07-04 1978-07-04 Temperature detection circuit

Publications (2)

Publication Number Publication Date
JPS557664A true JPS557664A (en) 1980-01-19
JPS6159450B2 JPS6159450B2 (en) 1986-12-16

Family

ID=13737039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8110378A Granted JPS557664A (en) 1978-07-04 1978-07-04 Temperature detection circuit

Country Status (1)

Country Link
JP (1) JPS557664A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01130838U (en) * 1988-03-01 1989-09-06

Also Published As

Publication number Publication date
JPS6159450B2 (en) 1986-12-16

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