JPS55163423A - Temperature detecting circuit - Google Patents

Temperature detecting circuit

Info

Publication number
JPS55163423A
JPS55163423A JP7294079A JP7294079A JPS55163423A JP S55163423 A JPS55163423 A JP S55163423A JP 7294079 A JP7294079 A JP 7294079A JP 7294079 A JP7294079 A JP 7294079A JP S55163423 A JPS55163423 A JP S55163423A
Authority
JP
Japan
Prior art keywords
fet transistor
gate
type mos
complementary type
mos inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7294079A
Other languages
Japanese (ja)
Inventor
Hiroyuki Nunogami
Konin Munakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7294079A priority Critical patent/JPS55163423A/en
Publication of JPS55163423A publication Critical patent/JPS55163423A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To achieve smaller size and lower price by employing the FET transistor and complementary type MOS inverter. CONSTITUTION:When the signal is applied on the gate 11G of the FET transistor 11, current flows through the circuit of: the DC power source connection terminal V1-the source 11S of the FET transistor 11-the drain 11D of the FET transistor 11- the resistance 12-the DC power source connection terminal V2. At this point, the output of the output terminal 16 is determined by the voltage to be applied on the gate 13G of the complementary type MOS inverter 13. Since the characteristics of the FET transistor 11 varies with the temperature, the voltage to be applied on the gate of the complementary type MOS inverter 13 changes with the variations in the open air temperature.
JP7294079A 1979-06-07 1979-06-07 Temperature detecting circuit Pending JPS55163423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7294079A JPS55163423A (en) 1979-06-07 1979-06-07 Temperature detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7294079A JPS55163423A (en) 1979-06-07 1979-06-07 Temperature detecting circuit

Publications (1)

Publication Number Publication Date
JPS55163423A true JPS55163423A (en) 1980-12-19

Family

ID=13503865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7294079A Pending JPS55163423A (en) 1979-06-07 1979-06-07 Temperature detecting circuit

Country Status (1)

Country Link
JP (1) JPS55163423A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448549A (en) * 1981-03-10 1984-05-15 Citizen Watch Company Limited Temperature sensing device
US7600913B2 (en) * 2003-04-15 2009-10-13 Tedrive Holding B.V. Saturated transistor based temperature sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448549A (en) * 1981-03-10 1984-05-15 Citizen Watch Company Limited Temperature sensing device
US7600913B2 (en) * 2003-04-15 2009-10-13 Tedrive Holding B.V. Saturated transistor based temperature sensor

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