JPS55164320A - Temperature detecting circuit - Google Patents

Temperature detecting circuit

Info

Publication number
JPS55164320A
JPS55164320A JP7280479A JP7280479A JPS55164320A JP S55164320 A JPS55164320 A JP S55164320A JP 7280479 A JP7280479 A JP 7280479A JP 7280479 A JP7280479 A JP 7280479A JP S55164320 A JPS55164320 A JP S55164320A
Authority
JP
Japan
Prior art keywords
power source
source
control electrode
circuit
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7280479A
Other languages
Japanese (ja)
Inventor
Hiroyuki Nunogami
Konin Munakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7280479A priority Critical patent/JPS55164320A/en
Publication of JPS55164320A publication Critical patent/JPS55164320A/en
Pending legal-status Critical Current

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  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

PURPOSE:To make it possible to constitute a temperature detecting circuit with an integrated circuit without an expensive thermistor to facilitate making the circuit small size, by constituting the circuit where the control electrode of the first field effect transistor is connected to the temperature detection signal source through a switching circuit. CONSTITUTION:The first field effect transistor 11 has source 11S, drain 11D, and gate 11G of the control electrode connected to DC power source V1, DC power source V2 through resistance 12, and DC power source V2 respectively, and further, respective electrodes 14D and 15D of the second transistor 14, which has source 14S and gate 14G of the control electrode connected to DC power source V1 and drain 11D respectively, and the third transistor 15, which has source 15S and gate 15G of the control electrode connected to DC power source V2 and drain 11D respectively, are connected to each other, thereby constituting complementary MOS inverter 13. By this constitution, it is detected whether the external air temperature is higher than the set temperature or not by the level of the high voltage generated in output terminal 16.
JP7280479A 1979-06-08 1979-06-08 Temperature detecting circuit Pending JPS55164320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7280479A JPS55164320A (en) 1979-06-08 1979-06-08 Temperature detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7280479A JPS55164320A (en) 1979-06-08 1979-06-08 Temperature detecting circuit

Publications (1)

Publication Number Publication Date
JPS55164320A true JPS55164320A (en) 1980-12-22

Family

ID=13499936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7280479A Pending JPS55164320A (en) 1979-06-08 1979-06-08 Temperature detecting circuit

Country Status (1)

Country Link
JP (1) JPS55164320A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02311723A (en) * 1989-05-23 1990-12-27 Samsung Electron Co Ltd Semiconductor temperature detection circuit
EP0702455A3 (en) * 1994-09-16 1997-09-24 Fuji Electric Co Ltd Overheat protection apparatus for self-turn-off device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02311723A (en) * 1989-05-23 1990-12-27 Samsung Electron Co Ltd Semiconductor temperature detection circuit
US5095227A (en) * 1989-05-23 1992-03-10 Samsung Electronics Co., Ltd. MOS transistor temperature detecting circuit
EP0702455A3 (en) * 1994-09-16 1997-09-24 Fuji Electric Co Ltd Overheat protection apparatus for self-turn-off device

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