JPS5563877A - Pressure-sensitive semiconductor device - Google Patents
Pressure-sensitive semiconductor deviceInfo
- Publication number
- JPS5563877A JPS5563877A JP13750578A JP13750578A JPS5563877A JP S5563877 A JPS5563877 A JP S5563877A JP 13750578 A JP13750578 A JP 13750578A JP 13750578 A JP13750578 A JP 13750578A JP S5563877 A JPS5563877 A JP S5563877A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- resistor layer
- substrate
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Pressure Sensors (AREA)
Abstract
PURPOSE: To enable optionally adjusting the pressure sensitivity, by providing a semiconductor substrate with a resistor layer which is sensitive to pressure and has an electroconductive type opposite to that of the substrate and by providing a pn junction or a Schottky barrier on the surface of the resistor layer.
CONSTITUTION: When a resistor layer which shows a piezoelectric resistance is a p-type semiconductor, the p-type resistor layer 12 is produced by diffusion so that the layer extends from the surface of an n-type single crystal silicon substrate of with a plane index of (110) or the like in parallel with the crystal direction (110) of the surface. An n-type layer 13 is produced on the surface of the p-type resistor layer 12 by diffusion. The n-type layer 13 may be replaced by a metal layer which makes a Schottky junction in cooperation with the substrate. As a result, the extension of a depletion layer in the resistor layer varies depending on the magnitude of a bias current applied to the p-type resistor layer. The pressure sensitivity changes with the variation in the extension of the depletion layer. Therefore, the pressure sensitivity can be optionally adjusted by setting the bias current at an appropriate level.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13750578A JPS5563877A (en) | 1978-11-08 | 1978-11-08 | Pressure-sensitive semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13750578A JPS5563877A (en) | 1978-11-08 | 1978-11-08 | Pressure-sensitive semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5563877A true JPS5563877A (en) | 1980-05-14 |
Family
ID=15200227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13750578A Pending JPS5563877A (en) | 1978-11-08 | 1978-11-08 | Pressure-sensitive semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5563877A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5528069A (en) * | 1994-08-01 | 1996-06-18 | Motorola, Inc. | Sensing transducer using a Schottky junction and having an increased output signal voltage |
| WO2007052800A1 (en) * | 2005-11-07 | 2007-05-10 | Rohm Co., Ltd. | Semiconductor pressure sensor |
-
1978
- 1978-11-08 JP JP13750578A patent/JPS5563877A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5528069A (en) * | 1994-08-01 | 1996-06-18 | Motorola, Inc. | Sensing transducer using a Schottky junction and having an increased output signal voltage |
| WO2007052800A1 (en) * | 2005-11-07 | 2007-05-10 | Rohm Co., Ltd. | Semiconductor pressure sensor |
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