GB929240A - Improvements in or relating to photo-sensitive semi-conductor devices - Google Patents
Improvements in or relating to photo-sensitive semi-conductor devicesInfo
- Publication number
- GB929240A GB929240A GB3473154A GB3473154A GB929240A GB 929240 A GB929240 A GB 929240A GB 3473154 A GB3473154 A GB 3473154A GB 3473154 A GB3473154 A GB 3473154A GB 929240 A GB929240 A GB 929240A
- Authority
- GB
- United Kingdom
- Prior art keywords
- surface layer
- junction
- semi
- type
- photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000002344 surface layer Substances 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910021476 group 6 element Inorganic materials 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
929,240. Semi-conductor devices. MINISTER OF AVIATION. Feb. 29, 1956 [Nov. 30, 1954], No. 34731/54. Class 37. A photo-sensitive semi-conductor device of the PN junction type comprises a mass of semiconductor material with current carriers of low effective mass 1, in which the body of the mass is of P type conductivity and a surface layer 2 is of N type conductivity so that a rectifying (PN) junction is formed between them, connections being made to the body and the surface layer to define a current path across the junction between the connections, and the thickness of the surface layer being determined so that radiation incident upon the layer can pass through to the junction of the body with the surface layer. The device may be of InSb with the layer 2 of N type having Te or another Group VI element as impurity. By controlling the concentration of impurity, e.g. to provide 5 x 10<SP>19</SP> or 5 x 10<SP>16</SP> electrons per cc., the transmission cut-off wavelength of the surface layer is determined. The Te is included by coating P type InSb with Te and then diffusing it with heat to a depth of 5 to 10 thousandths of an inch. The semi-conductor material may alternatively be InAs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3473154A GB929240A (en) | 1954-11-30 | 1954-11-30 | Improvements in or relating to photo-sensitive semi-conductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3473154A GB929240A (en) | 1954-11-30 | 1954-11-30 | Improvements in or relating to photo-sensitive semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB929240A true GB929240A (en) | 1963-06-19 |
Family
ID=10369274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3473154A Expired GB929240A (en) | 1954-11-30 | 1954-11-30 | Improvements in or relating to photo-sensitive semi-conductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB929240A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2188482B (en) * | 1986-03-24 | 1990-03-07 | Mitel Corp | Optical sensor |
| US11969611B2 (en) * | 2019-11-28 | 2024-04-30 | Chin-lung Yang | Face mask with supporting strip |
-
1954
- 1954-11-30 GB GB3473154A patent/GB929240A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2188482B (en) * | 1986-03-24 | 1990-03-07 | Mitel Corp | Optical sensor |
| US11969611B2 (en) * | 2019-11-28 | 2024-04-30 | Chin-lung Yang | Face mask with supporting strip |
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