JPS5519870A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5519870A
JPS5519870A JP9290878A JP9290878A JPS5519870A JP S5519870 A JPS5519870 A JP S5519870A JP 9290878 A JP9290878 A JP 9290878A JP 9290878 A JP9290878 A JP 9290878A JP S5519870 A JPS5519870 A JP S5519870A
Authority
JP
Japan
Prior art keywords
type
range
transistor
resistor
corrector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9290878A
Other languages
Japanese (ja)
Other versions
JPS6140139B2 (en
Inventor
Masao Yoshitomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9290878A priority Critical patent/JPS5519870A/en
Publication of JPS5519870A publication Critical patent/JPS5519870A/en
Publication of JPS6140139B2 publication Critical patent/JPS6140139B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: For preventing erroneous operation, to prevent the generation of parasitic transistor by constantly keeping in opposite bias condition the P-N junction between a resistor and corrector range when making an IC element of a transistor and said resistor.
CONSTITUTION: An IC element is made of a transistor Q1 and a resistor R so that no parasitic transistor Q2 may be produced. Therefore, N+-type floating correctors 6' and 6" are provided on a P-type Si substrate 7, N-type layer 1 for serving as the corrector of said transistor Q1 is formed over the whole surface thereof, P-type ranges 7' are formed at the both end portions thereof, and said layer 1 is separated in spots. Next, P-type base range 2 and P-type resistor range 5 are diffusedly formed at the places corresponding to said correctors 6' and 6", and N+-type emitter range 3 is provided in said range 2. Further, N+-type corrector ohmic contact range 4 is diffusedly formed between ranges 2 and 5, and the both end portions thereof are connected with correctors 6' and 6" by means of N+-type corrector walls 8' and 8".
COPYRIGHT: (C)1980,JPO&Japio
JP9290878A 1978-07-28 1978-07-28 Semiconductor integrated circuit Granted JPS5519870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9290878A JPS5519870A (en) 1978-07-28 1978-07-28 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9290878A JPS5519870A (en) 1978-07-28 1978-07-28 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5519870A true JPS5519870A (en) 1980-02-12
JPS6140139B2 JPS6140139B2 (en) 1986-09-08

Family

ID=14067574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9290878A Granted JPS5519870A (en) 1978-07-28 1978-07-28 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5519870A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166070A (en) * 1981-04-06 1982-10-13 Matsushita Electric Ind Co Ltd Semiconductor ic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166070A (en) * 1981-04-06 1982-10-13 Matsushita Electric Ind Co Ltd Semiconductor ic device

Also Published As

Publication number Publication date
JPS6140139B2 (en) 1986-09-08

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