JPS5519870A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5519870A JPS5519870A JP9290878A JP9290878A JPS5519870A JP S5519870 A JPS5519870 A JP S5519870A JP 9290878 A JP9290878 A JP 9290878A JP 9290878 A JP9290878 A JP 9290878A JP S5519870 A JPS5519870 A JP S5519870A
- Authority
- JP
- Japan
- Prior art keywords
- type
- range
- transistor
- resistor
- corrector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: For preventing erroneous operation, to prevent the generation of parasitic transistor by constantly keeping in opposite bias condition the P-N junction between a resistor and corrector range when making an IC element of a transistor and said resistor.
CONSTITUTION: An IC element is made of a transistor Q1 and a resistor R so that no parasitic transistor Q2 may be produced. Therefore, N+-type floating correctors 6' and 6" are provided on a P-type Si substrate 7, N-type layer 1 for serving as the corrector of said transistor Q1 is formed over the whole surface thereof, P-type ranges 7' are formed at the both end portions thereof, and said layer 1 is separated in spots. Next, P-type base range 2 and P-type resistor range 5 are diffusedly formed at the places corresponding to said correctors 6' and 6", and N+-type emitter range 3 is provided in said range 2. Further, N+-type corrector ohmic contact range 4 is diffusedly formed between ranges 2 and 5, and the both end portions thereof are connected with correctors 6' and 6" by means of N+-type corrector walls 8' and 8".
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9290878A JPS5519870A (en) | 1978-07-28 | 1978-07-28 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9290878A JPS5519870A (en) | 1978-07-28 | 1978-07-28 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5519870A true JPS5519870A (en) | 1980-02-12 |
JPS6140139B2 JPS6140139B2 (en) | 1986-09-08 |
Family
ID=14067574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9290878A Granted JPS5519870A (en) | 1978-07-28 | 1978-07-28 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5519870A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57166070A (en) * | 1981-04-06 | 1982-10-13 | Matsushita Electric Ind Co Ltd | Semiconductor ic device |
-
1978
- 1978-07-28 JP JP9290878A patent/JPS5519870A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57166070A (en) * | 1981-04-06 | 1982-10-13 | Matsushita Electric Ind Co Ltd | Semiconductor ic device |
Also Published As
Publication number | Publication date |
---|---|
JPS6140139B2 (en) | 1986-09-08 |
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