JPS5779680A - Manufacture of silicon avalanche photodiode - Google Patents

Manufacture of silicon avalanche photodiode

Info

Publication number
JPS5779680A
JPS5779680A JP55156088A JP15608880A JPS5779680A JP S5779680 A JPS5779680 A JP S5779680A JP 55156088 A JP55156088 A JP 55156088A JP 15608880 A JP15608880 A JP 15608880A JP S5779680 A JPS5779680 A JP S5779680A
Authority
JP
Japan
Prior art keywords
type
layer
manufacture
covered
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55156088A
Other languages
Japanese (ja)
Inventor
Seiichi Nagai
Saburo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55156088A priority Critical patent/JPS5779680A/en
Publication of JPS5779680A publication Critical patent/JPS5779680A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode

Abstract

PURPOSE:To contrive complete planar and to increase reliability by a method wherein a P type epitaxial layer is formed on an N type single crystal silicon substrate and processing for porosity and an N type formation is done and the silicon surface is also covered with an oxide film. CONSTITUTION:A P type epitaxial layer 2 is formed on an N type single crystal silicon substrate 1 and the layer 2 is formed in porous and annular shape. Next, the porous layer 13 and the peripheral section are gone an N type. Next, the layer 13 and other silicon surfaces are covered with an oxide film 14 formed at a low temperature of 1,000 deg.C or below and under high pressure. Furthermore, an electrode 6 is formed to make a photoreflection-proof film 8.
JP55156088A 1980-11-05 1980-11-05 Manufacture of silicon avalanche photodiode Pending JPS5779680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156088A JPS5779680A (en) 1980-11-05 1980-11-05 Manufacture of silicon avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156088A JPS5779680A (en) 1980-11-05 1980-11-05 Manufacture of silicon avalanche photodiode

Publications (1)

Publication Number Publication Date
JPS5779680A true JPS5779680A (en) 1982-05-18

Family

ID=15620034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156088A Pending JPS5779680A (en) 1980-11-05 1980-11-05 Manufacture of silicon avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS5779680A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606115A (en) * 1985-05-14 1986-08-19 Motorola, Inc. Method of manufacturing optically sensitive semiconductor devices including anti-reflective coatings

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606115A (en) * 1985-05-14 1986-08-19 Motorola, Inc. Method of manufacturing optically sensitive semiconductor devices including anti-reflective coatings

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