SU600481A1 - Temperature measuring method - Google Patents
Temperature measuring methodInfo
- Publication number
- SU600481A1 SU600481A1 SU752101405A SU2101405A SU600481A1 SU 600481 A1 SU600481 A1 SU 600481A1 SU 752101405 A SU752101405 A SU 752101405A SU 2101405 A SU2101405 A SU 2101405A SU 600481 A1 SU600481 A1 SU 600481A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- measuring method
- temperature measuring
- measuring
- temperature
- temperature sensitive
- Prior art date
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Description
пропорциональна нзменению днфференциального сонротивлени управл ющего перехода; величнна у зависит от изменени активной и реактивной составл ющих.proportional to the change in the differential resistance of the control junction; the magnitude depends on the change in the active and reactive components.
Измерени , проведенные таким способом, показали чувствительность не менее 100 мкВ/°С.Measurements carried out in this way showed a sensitivity of at least 100 µV / ° C.
Использование предлагаемого способа по сравнению с известными обеспечивает следующие преимущества. Высока чувствительность позвол ет измер ть малые температуры разогрева структуры с больщой точностью, что обеснечивает измерени малых величин тепловых сопротивлений тиристоров. Это далабораторных исет новые возможмости следовани х.The use of the proposed method in comparison with the known provides the following advantages. The high sensitivity makes it possible to measure low temperatures of the heating of the structure with greater accuracy, which provides measurements of small values of the thermal resistance of the thyristors. This provides new opportunities for following.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU752101405A SU600481A1 (en) | 1975-01-29 | 1975-01-29 | Temperature measuring method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU752101405A SU600481A1 (en) | 1975-01-29 | 1975-01-29 | Temperature measuring method |
Publications (1)
Publication Number | Publication Date |
---|---|
SU600481A1 true SU600481A1 (en) | 1978-03-30 |
Family
ID=20608880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU752101405A SU600481A1 (en) | 1975-01-29 | 1975-01-29 | Temperature measuring method |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU600481A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4324982A1 (en) * | 1993-07-26 | 1995-02-02 | Abb Management Ag | Method and circuit arrangement for measuring the junction temperature of a GTO thyristor |
CN100460864C (en) * | 2005-12-09 | 2009-02-11 | 中国科学院上海技术物理研究所 | Method for testing junction temp. of semiconductor LED with gallium nitride base |
CN105510793A (en) * | 2015-12-25 | 2016-04-20 | 同济大学 | Self-calibration method of converter IGBT power module junction temperature measurement |
-
1975
- 1975-01-29 SU SU752101405A patent/SU600481A1/en active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4324982A1 (en) * | 1993-07-26 | 1995-02-02 | Abb Management Ag | Method and circuit arrangement for measuring the junction temperature of a GTO thyristor |
US5473260A (en) * | 1993-07-26 | 1995-12-05 | Abb Management Ag | Method and circuit arrangement for measuring the depletion layer temperature of a GTO thyristor |
CN100460864C (en) * | 2005-12-09 | 2009-02-11 | 中国科学院上海技术物理研究所 | Method for testing junction temp. of semiconductor LED with gallium nitride base |
CN105510793A (en) * | 2015-12-25 | 2016-04-20 | 同济大学 | Self-calibration method of converter IGBT power module junction temperature measurement |
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