JPS57172776A - Semiconductor pressure transducer - Google Patents

Semiconductor pressure transducer

Info

Publication number
JPS57172776A
JPS57172776A JP5672481A JP5672481A JPS57172776A JP S57172776 A JPS57172776 A JP S57172776A JP 5672481 A JP5672481 A JP 5672481A JP 5672481 A JP5672481 A JP 5672481A JP S57172776 A JPS57172776 A JP S57172776A
Authority
JP
Japan
Prior art keywords
circuit
resistors
voltage
semiconductor substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5672481A
Other languages
Japanese (ja)
Other versions
JPH0158671B2 (en
Inventor
Shunji Shiromizu
Ryuzo Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5672481A priority Critical patent/JPS57172776A/en
Publication of JPS57172776A publication Critical patent/JPS57172776A/en
Publication of JPH0158671B2 publication Critical patent/JPH0158671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To effectively perform zero-point temperature compensation by a method wherein a driving voltage is applied to a bridge circuit composed by using a set of resistor strain gauge obtained by diffusing an impurity on a semiconductor substrate and a bias voltage is applied to the substrate to decrease the potential difference across the substrate and the gauge in accordance with a rise in external temperature. CONSTITUTION:Gauge resistors R1 and R2 indicating opposite resistance variation by corresponding to pressure is formed on a semiconductor substrate by diffusion and a half-bridge circuit 15 is composed by combining the resistors R1 and R2 with fixed resistors R01 and R02, and furthermore, varible resistors r1 and r2 for zero-point adjustment. And a temperature compensating circuit 17 is provided across the circuit 15 and a driving power source 16, and resistors R11 and R12 are provided across the base and collector, and the base and emitter of a transistor Q composing the circuit 17 respectively. The circuit 17 is composed in this way, and the power voltage V0 is applied to the circuit 17 to grow the voltage VB varied by temperature. The voltage V0 is applied to the circuit 15 and directly applied to the semiconductor substrate as well.
JP5672481A 1981-04-15 1981-04-15 Semiconductor pressure transducer Granted JPS57172776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5672481A JPS57172776A (en) 1981-04-15 1981-04-15 Semiconductor pressure transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5672481A JPS57172776A (en) 1981-04-15 1981-04-15 Semiconductor pressure transducer

Publications (2)

Publication Number Publication Date
JPS57172776A true JPS57172776A (en) 1982-10-23
JPH0158671B2 JPH0158671B2 (en) 1989-12-13

Family

ID=13035435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5672481A Granted JPS57172776A (en) 1981-04-15 1981-04-15 Semiconductor pressure transducer

Country Status (1)

Country Link
JP (1) JPS57172776A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55146019A (en) * 1979-05-01 1980-11-14 Toshiba Corp Pressure detector of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55146019A (en) * 1979-05-01 1980-11-14 Toshiba Corp Pressure detector of semiconductor

Also Published As

Publication number Publication date
JPH0158671B2 (en) 1989-12-13

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