FR2458145A1 - Thermally compensated semiconductor device - has complete monolithic structure which is suitable for FET or avalanche diode - Google Patents

Thermally compensated semiconductor device - has complete monolithic structure which is suitable for FET or avalanche diode

Info

Publication number
FR2458145A1
FR2458145A1 FR7913627A FR7913627A FR2458145A1 FR 2458145 A1 FR2458145 A1 FR 2458145A1 FR 7913627 A FR7913627 A FR 7913627A FR 7913627 A FR7913627 A FR 7913627A FR 2458145 A1 FR2458145 A1 FR 2458145A1
Authority
FR
France
Prior art keywords
fet
diode
semiconductor device
avalanche diode
monolithic structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7913627A
Other languages
French (fr)
Other versions
FR2458145B1 (en
Inventor
Raymond Henry
Jean-Victor Bouvet
Alain Chapard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7913627A priority Critical patent/FR2458145A1/en
Publication of FR2458145A1 publication Critical patent/FR2458145A1/en
Application granted granted Critical
Publication of FR2458145B1 publication Critical patent/FR2458145B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H01L27/0694—Integrated circuits having a three-dimensional layout comprising components formed on opposite sides of a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Light Receiving Elements (AREA)

Abstract

The monolithic semiconductor is a controlled device stacked on top of a device sensing thermal drift. The element to be compensated may be either an FET, avalanche diode or photodiode contiguous with a device for sensing thermal drift which may be a pin diode or ohmic region on the same substrate. If the temperature sensing device is driven by a constant current source, a control voltage appears across the terminals (K1 and K2) which may be used to compensate the avalanche photodiode output (21). In one embodiment, there is a substrate (10) of semiconductor material with p-positive conductivity adjacent to a layer (11) of p-negative conductivity and a thin top layer (12) of p-conductivity under a guard ring (15). The lower layers (30,31) form part of a p-i-n diode.
FR7913627A 1979-05-29 1979-05-29 Thermally compensated semiconductor device - has complete monolithic structure which is suitable for FET or avalanche diode Granted FR2458145A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7913627A FR2458145A1 (en) 1979-05-29 1979-05-29 Thermally compensated semiconductor device - has complete monolithic structure which is suitable for FET or avalanche diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7913627A FR2458145A1 (en) 1979-05-29 1979-05-29 Thermally compensated semiconductor device - has complete monolithic structure which is suitable for FET or avalanche diode

Publications (2)

Publication Number Publication Date
FR2458145A1 true FR2458145A1 (en) 1980-12-26
FR2458145B1 FR2458145B1 (en) 1982-12-31

Family

ID=9225962

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913627A Granted FR2458145A1 (en) 1979-05-29 1979-05-29 Thermally compensated semiconductor device - has complete monolithic structure which is suitable for FET or avalanche diode

Country Status (1)

Country Link
FR (1) FR2458145A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656494A (en) * 1984-05-31 1987-04-07 Fujitsu Limited Avalanche multiplication photodiode having a buried structure
WO2003005426A1 (en) * 2001-07-05 2003-01-16 Motorola, Inc. Semiconductor structure with temperature control device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1054586B (en) * 1955-05-20 1959-04-09 Ibm Deutschland Transistor with temperature compensated collector current
US3260900A (en) * 1961-04-27 1966-07-12 Merck & Co Inc Temperature compensating barrier layer semiconductor
DE1588871A1 (en) * 1967-06-01 1970-12-23 Telefunken Patent Circuit arrangement for stabilizing voltages with a Zener diode
FR2150536A1 (en) * 1971-08-25 1973-04-06 Philips Nv

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1054586B (en) * 1955-05-20 1959-04-09 Ibm Deutschland Transistor with temperature compensated collector current
US3260900A (en) * 1961-04-27 1966-07-12 Merck & Co Inc Temperature compensating barrier layer semiconductor
DE1588871A1 (en) * 1967-06-01 1970-12-23 Telefunken Patent Circuit arrangement for stabilizing voltages with a Zener diode
FR2150536A1 (en) * 1971-08-25 1973-04-06 Philips Nv

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656494A (en) * 1984-05-31 1987-04-07 Fujitsu Limited Avalanche multiplication photodiode having a buried structure
WO2003005426A1 (en) * 2001-07-05 2003-01-16 Motorola, Inc. Semiconductor structure with temperature control device

Also Published As

Publication number Publication date
FR2458145B1 (en) 1982-12-31

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Legal Events

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