JPS5568684A - Infrared ray camera - Google Patents

Infrared ray camera

Info

Publication number
JPS5568684A
JPS5568684A JP14269478A JP14269478A JPS5568684A JP S5568684 A JPS5568684 A JP S5568684A JP 14269478 A JP14269478 A JP 14269478A JP 14269478 A JP14269478 A JP 14269478A JP S5568684 A JPS5568684 A JP S5568684A
Authority
JP
Japan
Prior art keywords
electrode
diode
infrared ray
mesa
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14269478A
Other languages
Japanese (ja)
Other versions
JPS5653862B2 (en
Inventor
Hiroshi Takigawa
Shoji Doi
Soichi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14269478A priority Critical patent/JPS5568684A/en
Publication of JPS5568684A publication Critical patent/JPS5568684A/en
Publication of JPS5653862B2 publication Critical patent/JPS5653862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • H01L27/14881—Infrared CCD or CID imagers of the hybrid type

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To improve the reliability of an infrared ray camera by arranging oppositely a multiple semiconductor substrate having a number of infrared ray detecting elements formed with mesa pn-junctions and a transfer unit for transferring signal charge from the detecting elements. CONSTITUTION:An electrode 34 is adhered with adhesive 35 onto a silicon substrate 36 capable of transmitting infrared rays excluding a light receiving portion 31 formed later, and a mesa light receiving portion 31 is formed with pn-junctions 32 among the electrode 34. Then, an In electrode 40 is mounted on the top surface 39 of the portion 31 while projecting the electrode 40, and a protecting anodoxdization film 33 is coated from the mesa side surface on the electrode 34. On the other hand, a transfer unit having an input diode 38, an input gate electrode 42, a storage gate electrode 43 and an output gate electrode 44 on a silicon substrate 37 surrounded by a channel stop 48 is arranged at the side opposite to the portion 31, and the electrode 40 of the portion 31 is made contact with the diode 38. Thus, even if temperature is altered, no displacement occurs between the diode 38 and the electrode 40 as coupled.
JP14269478A 1978-11-17 1978-11-17 Infrared ray camera Granted JPS5568684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14269478A JPS5568684A (en) 1978-11-17 1978-11-17 Infrared ray camera

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14269478A JPS5568684A (en) 1978-11-17 1978-11-17 Infrared ray camera

Publications (2)

Publication Number Publication Date
JPS5568684A true JPS5568684A (en) 1980-05-23
JPS5653862B2 JPS5653862B2 (en) 1981-12-22

Family

ID=15321354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14269478A Granted JPS5568684A (en) 1978-11-17 1978-11-17 Infrared ray camera

Country Status (1)

Country Link
JP (1) JPS5568684A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566024A (en) * 1982-03-12 1986-01-21 Societe Anonyme De Telecommunications Matrix infrared detector
US4660066A (en) * 1982-09-08 1987-04-21 Texas Instruments Incorporated Structure for packaging focal plane imagers and signal processing circuits
US4695861A (en) * 1985-10-21 1987-09-22 Honeywell Inc. Backside mosaic photoconductive infrared detector array
US4720738A (en) * 1982-09-08 1988-01-19 Texas Instruments Incorporated Focal plane array structure including a signal processing system
JP2008066584A (en) * 2006-09-08 2008-03-21 Asahi Kasei Electronics Co Ltd Photosensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566024A (en) * 1982-03-12 1986-01-21 Societe Anonyme De Telecommunications Matrix infrared detector
US4660066A (en) * 1982-09-08 1987-04-21 Texas Instruments Incorporated Structure for packaging focal plane imagers and signal processing circuits
US4720738A (en) * 1982-09-08 1988-01-19 Texas Instruments Incorporated Focal plane array structure including a signal processing system
US4695861A (en) * 1985-10-21 1987-09-22 Honeywell Inc. Backside mosaic photoconductive infrared detector array
JP2008066584A (en) * 2006-09-08 2008-03-21 Asahi Kasei Electronics Co Ltd Photosensor

Also Published As

Publication number Publication date
JPS5653862B2 (en) 1981-12-22

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