JPS57155785A - Semiconductor photo-receiving element photodetector - Google Patents

Semiconductor photo-receiving element photodetector

Info

Publication number
JPS57155785A
JPS57155785A JP56040497A JP4049781A JPS57155785A JP S57155785 A JPS57155785 A JP S57155785A JP 56040497 A JP56040497 A JP 56040497A JP 4049781 A JP4049781 A JP 4049781A JP S57155785 A JPS57155785 A JP S57155785A
Authority
JP
Japan
Prior art keywords
layer
refractive index
semiconductor photo
receiving element
pin junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56040497A
Other languages
Japanese (ja)
Inventor
Takafumi Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56040497A priority Critical patent/JPS57155785A/en
Publication of JPS57155785A publication Critical patent/JPS57155785A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier

Abstract

PURPOSE:To prevent external contamination and to eliminate problems of surface reflection, etc. by providing in the vicinity of the surface of a semiconductor photo-receiving a third protective layer which has a specific refractive index. CONSTITUTION:A Pin junction photodiode is composed of an N<-> silicon (refractive index n0=3.45) 22 on which a P<+> layer 27, N<+> layer 21 and N<+> channel stopper 28 are formed. On the surface of such a Pin junction photodiode, a Si3N4 film 24 (n1=2.24) and a PSG film 25 (n2=1.45) are deposited so as to satisfy: n1<2>=n0 n2, and, in addition, the third layer 26 of MgF2 (n3=1.38) is formed. By this, external contamination can be prevented as well as surface reflection can be reduced. Moreover, improvement in efficiency can be obtained when the refractive index n3 of the third layer is made to be n3<2>=n2 n4, where n4= refractive index of ambient atmosphere (vacuum or air).
JP56040497A 1981-03-23 1981-03-23 Semiconductor photo-receiving element photodetector Pending JPS57155785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56040497A JPS57155785A (en) 1981-03-23 1981-03-23 Semiconductor photo-receiving element photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56040497A JPS57155785A (en) 1981-03-23 1981-03-23 Semiconductor photo-receiving element photodetector

Publications (1)

Publication Number Publication Date
JPS57155785A true JPS57155785A (en) 1982-09-25

Family

ID=12582197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56040497A Pending JPS57155785A (en) 1981-03-23 1981-03-23 Semiconductor photo-receiving element photodetector

Country Status (1)

Country Link
JP (1) JPS57155785A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021576A (en) * 1983-07-15 1985-02-02 Fuji Electric Corp Res & Dev Ltd Photo detection element
JPS6384169A (en) * 1986-09-29 1988-04-14 Matsushita Electronics Corp Optical semiconductor device
JPH0476964A (en) * 1990-07-19 1992-03-11 Toshiba Corp Semiconductor photoelectric element
EP0585055A1 (en) * 1992-08-21 1994-03-02 Santa Barbara Research Center Wideband anti-reflection coating for indium antimonide photodetector device
JPH08213647A (en) * 1995-12-07 1996-08-20 Matsushita Electron Corp Optical semiconductor device
JPH08228019A (en) * 1995-12-07 1996-09-03 Matsushita Electron Corp Optical semiconductor device
WO2003030270A1 (en) * 2001-09-13 2003-04-10 Sharp Kabushiki Kaisha Split light-receiving device and optical disc drive comprising it

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021576A (en) * 1983-07-15 1985-02-02 Fuji Electric Corp Res & Dev Ltd Photo detection element
JPS6384169A (en) * 1986-09-29 1988-04-14 Matsushita Electronics Corp Optical semiconductor device
JPH0476964A (en) * 1990-07-19 1992-03-11 Toshiba Corp Semiconductor photoelectric element
EP0585055A1 (en) * 1992-08-21 1994-03-02 Santa Barbara Research Center Wideband anti-reflection coating for indium antimonide photodetector device
JPH08213647A (en) * 1995-12-07 1996-08-20 Matsushita Electron Corp Optical semiconductor device
JPH08228019A (en) * 1995-12-07 1996-09-03 Matsushita Electron Corp Optical semiconductor device
WO2003030270A1 (en) * 2001-09-13 2003-04-10 Sharp Kabushiki Kaisha Split light-receiving device and optical disc drive comprising it

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