JPS57157564A - Manufacture of image reading line sensor - Google Patents
Manufacture of image reading line sensorInfo
- Publication number
- JPS57157564A JPS57157564A JP56042489A JP4248981A JPS57157564A JP S57157564 A JPS57157564 A JP S57157564A JP 56042489 A JP56042489 A JP 56042489A JP 4248981 A JP4248981 A JP 4248981A JP S57157564 A JPS57157564 A JP S57157564A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- groove
- diffused
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000011247 coating layer Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To avoid the damage of tissues of both ends of a photodiode array formed on a semiconductor substrate by opening a V-shaped groove when cutting the array, forming a diffused layer of the same conductive type as the substrate and cutting from the diffused layer to form a chip. CONSTITUTION:An N<-> type layer 22 is expitaxially grown on an N<+> type Si substrate 21, many P<+> type regions 24 becoming photodetecting surface are diffused and formed at the prescribed interval, are respectively cut and isolated, and are connected linearly to for an arrat. In this structur, in order to form V- shaped or U-shaped grooves at the regions to be cut or isolated, the boundary line of the end of the array is aligned in (100) direction with the substrate of (100) surface used for the substrate 21. Thereafter, an N<+> type layer 27 is diffused and formed onthe wall surface of the groove, non-reflective coating layer 25 of Si3N4 is covered on the photodetecting surface, an SiO2 film 23 is covered on the other surface, and the central cutting line 28 of the groove is cut with a blade. Since the layer 27 is formed on the wall surface of the groove in this manner, the tissues of the end face of respective diodes are not damaged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56042489A JPS57157564A (en) | 1981-03-25 | 1981-03-25 | Manufacture of image reading line sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56042489A JPS57157564A (en) | 1981-03-25 | 1981-03-25 | Manufacture of image reading line sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57157564A true JPS57157564A (en) | 1982-09-29 |
Family
ID=12637469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56042489A Pending JPS57157564A (en) | 1981-03-25 | 1981-03-25 | Manufacture of image reading line sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57157564A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5719414A (en) * | 1993-03-16 | 1998-02-17 | Sato; Keiji | Photoelectric conversion semiconductor device with insulation film |
| CN103515396A (en) * | 2012-06-15 | 2014-01-15 | 三菱电机株式会社 | Photodiode array |
-
1981
- 1981-03-25 JP JP56042489A patent/JPS57157564A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5719414A (en) * | 1993-03-16 | 1998-02-17 | Sato; Keiji | Photoelectric conversion semiconductor device with insulation film |
| CN103515396A (en) * | 2012-06-15 | 2014-01-15 | 三菱电机株式会社 | Photodiode array |
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