JPS5632777A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS5632777A
JPS5632777A JP10883679A JP10883679A JPS5632777A JP S5632777 A JPS5632777 A JP S5632777A JP 10883679 A JP10883679 A JP 10883679A JP 10883679 A JP10883679 A JP 10883679A JP S5632777 A JPS5632777 A JP S5632777A
Authority
JP
Japan
Prior art keywords
type
layer
type layers
diffused
integrating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10883679A
Other languages
Japanese (ja)
Inventor
Takafumi Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10883679A priority Critical patent/JPS5632777A/en
Publication of JPS5632777A publication Critical patent/JPS5632777A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain sufficient signal isolation characteristics of the semiconductor photodetector by integrating integrally a plurality of photodetecting elements with a semiconductor substrate so as for adjacent element polarities to become reverse, thereby integrating the photodetecting elements at infinitesimal interval. CONSTITUTION:N<+> type layers 121, 123,... and P type layers 132, 134,... are diffused on the surface of an N type substrate 10, an N<-> type layer 11 is epitaxially grown thereafter, and N<+> type layers 122, 124,... and P type layers 131, 133,... are diffused on the surface of the layer 11. Photodiodes thus integrated are commonly connected, for example, at the N type side, negative voltage is applied to the P type side, and is used with the layer 11 depleted. In this manner carrier generated in the boundary region by light is accelerated by strong electric field, and is thus forcibly isolated. Even if the width between the adjacent photodiodes is accordingly small, sufficient signal isolating characteristics can be obtained.
JP10883679A 1979-08-27 1979-08-27 Semiconductor photodetector Pending JPS5632777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10883679A JPS5632777A (en) 1979-08-27 1979-08-27 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10883679A JPS5632777A (en) 1979-08-27 1979-08-27 Semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS5632777A true JPS5632777A (en) 1981-04-02

Family

ID=14494782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10883679A Pending JPS5632777A (en) 1979-08-27 1979-08-27 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5632777A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578837A (en) * 1995-01-03 1996-11-26 Xerox Corporation Integrating hyperacuity sensors and arrays thereof
US5602415A (en) * 1994-07-14 1997-02-11 Sharp Kabushiki Kaisha Light receiving device with isolation regions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602415A (en) * 1994-07-14 1997-02-11 Sharp Kabushiki Kaisha Light receiving device with isolation regions
US5578837A (en) * 1995-01-03 1996-11-26 Xerox Corporation Integrating hyperacuity sensors and arrays thereof

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